The present disclosure provides a slurry. The slurry includes an abrasive including a ceria compound; a removal rate regulator to adjust removal rates of the slurry to metal and to dielectric material; and a buffering agent to adjust a pH value of the slurry, wherein the slurry comprises a dielectric material removal rate higher than a metal oxide removal rate.

Methods for fabricating a 3D NAND flash memory are disclosed. The method includes the steps of forming a hardmask pattern on the hardmask layer, and using the hardmask pattern to form apertures in the alternating layers by selectively plasma etching the alternating layers versus the hardmask layer using a hydrofluorocarbon etching gas selected from the group consisting of 1,1,1,3,3,3-hexafluoropropane (C.sub.3H.sub.2F.sub.6), 1,1,2,2,3,3-hexafluoropropane (iso-C.sub.3H.sub.2F.sub.6), 1,1,1,2,3,3,3-heptafluoropropane (C.sub.3HF.sub.7), and 1,1,1,2,2,3,3-heptafluoropropane (iso-C.sub.3HF.sub.7), wherein the first etching layer comprises a material different from that of the second etching layer.

Systems and methods for etching complex patterns on an interior surface of a hollow object are disclosed. A method generally includes positioning a laser system within the hollow object with a focal point of the laser focused on the interior surface, and operating the laser system to form the complex pattern on the interior surface. Motion of the laser system and the hollow object is controlled by a motion control system configured to provide rotation and/or translation about a longitudinal axis of one or both of the hollow object and the laser system based on the complex pattern, and change a positional relationship between a reflector and a focusing lens of the laser system to accommodate a change in distance between the reflector and the interior surface of the hollow object.

A wafer structure and a trimming method thereof are provided. The wafer structure includes a first wafer which includes a front surface, a back surface, and a sidewall connected to the front surface and the back surface. The sidewall of the first wafer includes a plurality of first regions at an edge of the sidewall and the back surface and laterally separated from one another by a pitch. Each of the first regions extends from the back surface toward the front surface and has etching streaks thereon.

A method of processing a silicon substrate can include etching the silicon substrate with a first etchant having a first concentration and etching with a second etchant having a second concentration. In an embodiment, the second concentration of the second etchant can be greater than the first concentration of the first etchant. In one embodiment, the first etchant can be a different type of etchant than the second etchant. In an embodiment, the first and second etchant can be the same type of etchant. In some embodiments the silicon substrate can be cleaned with a first cleaning solution to remove contaminants from the silicon substrate prior to etching with the first etchant. In an embodiment, the silicon substrate can be cleaned with a second cleaning solution after etching the silicon substrate with a second etchant.

Method for manufacturing a bonded SOI wafer by bonding a bond wafer and base wafer, each composed of a silicon single crystal, via an insulator film, including the steps: depositing a polycrystalline silicon layer on the base wafer bonding surface side, polishing the polycrystalline silicon layer surface, forming the insulator film on the bonding surface of the bond wafer, bonding the polished surface of the base wafer polycrystalline silicon layer and bond wafer via the insulator film; thinning the bonded bond wafer to form an SOI layer; wherein, in the step of depositing the polycrystalline silicon layer, a wafer having a chemically etched surface as base wafer; chemically etched surface is subjected to primary polishing followed by depositing the polycrystalline silicon layer on surface subjected to the primary polishing, and in the step polishing the polycrystalline silicon layer surface, which is subjected to secondary polishing or secondary and finish polishing.

A method and processing system are provided for independent temperature and hydration control for an etching solution used for treating a wafer in process chamber. The method includes circulating the etching solution in a circulation loop, maintaining the etching solution at a hydration setpoint by adding or removing water from the etching solution, maintaining the etching solution at a temperature setpoint that is below the boiling point of the etching solution in the circulation loop, and dispensing the etching solution into the process chamber for treating the wafer. In one embodiment, the dispensing includes dispensing the etching solution into a processing region proximate the wafer in the process chamber, introducing steam into an exterior region that is removed from the wafer in the process chamber, and treating the wafer with the etching solution and the steam.

A method for etching a silicon wafer, the method including a spin etching step in which while an acid etching solution is supplied to a front or back side surface of a silicon wafer through a supply nozzle, the silicon wafer is rotated to expand a supply range of the acid etching solution to perform acid etching throughout the front or back side surface of the silicon wafer. Before the rotation of the silicon wafer is started, an acid mixture containing at least hydrofluoric acid and nitric acid is added dropwise within an impinging jet area which is located immediately below the supply nozzle, and in which the acid etching solution supplied through the supply nozzle impinges on the surface of the silicon wafer. After the impinging jet area is covered with the acid mixture, the rotation of the silicon wafer is started to perform the spin etching step.

A method producing a nano-sized interconnect structure that electrically connects the front side of a semiconductor substrate to the back side of the substrate is provided. In one aspect, the method produces a semiconductor component such as an integrated circuit chip that includes active devices formed on the front side of the substrate, and an interconnect network such as a power delivery network on the back side of the substrate. The substrate includes a lower semiconductor layer, an intermediate layer, and an upper layer. A trench is formed through the upper layer, the material of the intermediate layer is etched from inside the trench to form a cavity at the foot of the trench, and the trench and the cavity are filled with an electrically conductive material to form a buried rail with a wide contact pad at the foot of the rail, that is, wider than the width of the rail and extending between the front and back surfaces of the intermediate layer. A nanoTSV connection is processed from the back of the substrate, the nanoTSV contacting the contact pad, to thereby form the interconnect structure.

A wafer structure and a trimming method thereof are provided. The wafer structure includes a first wafer which includes a front surface, a back surface, and a sidewall connected to the front surface and the back surface. The sidewall of the first wafer includes a plurality of first regions at an edge of the sidewall and the back surface and laterally separated from one another by a pitch. Each of the first regions extends from the back surface toward the front surface and has etching streaks thereon.