Example features relate to a method of polishing a chamfered wafer surface, the method including beveling a wafer to generate the chamfered wafer surface, the chamfered wafer surface being inclined with respect to a main wafer surface by an angle θ; and polishing the chamfered wafer surface with a polishing pad, a polishing surface of the polishing pad being inclined with respect to the chamfered wafer surface by an angle α; wherein the angle α is equal to or smaller than the angle θ. Example features relate to a system for polishing the chamfered surface, the system including a polishing pad mounting jig configured to polish the chamfered surface, an angle θ being defined between the chamfered surface and the main surface; and a polishing pad in contact with the chamfered surface at an angle α during polishing; wherein the angle α is smaller than the angle θ.

A method for manufacturing a semiconductor device includes preparing a lead frame, mounting a semiconductor element on an obverse face of the lead frame, forming a sealing resin covering the semiconductor element, forming a groove on a reverse face of the lead frame, and removing a portion of the lead frame and a portion of the sealing resin along a disposal region that is narrower than the groove and entirely overlaps with the groove. The preparing of the lead frame includes forming at least one recess located in the disposal region and having an end that is open in the thickness direction. The forming of the groove includes exposing the recess on a side of the reverse face of the lead frame. The removing is performed with reference to the recess.

A method for treating a semiconductor structure includes: forming the semiconductor structure which includes a carrier substrate, a device substrate, a semiconductor device formed on the device substrate, and a bonding layer formed to bond the semiconductor device with the carrier substrate, the device substrate having an upper surface which is faced upwardly, and which is opposite to the semiconductor device; and directing a chemical fluid to impinge the upper surface of the device substrate so as to remove an edge portion of the device substrate.

In a method of manufacturing silicon elements a part having a cross section with four straight sides and four arcuate portions each connecting two of the straight skies with one another and a rotatable abrasive tool which has a circular abrasive working layer composed of abrasive particles are provided, the tool is rotated around a central axis of the part having a cross section with the four straight sides and the four arcuate portions each connecting two of the straight sides with one another, in contact with the four arcuate portions with simultaneous displacement of the tool along an axis of the part to remove outer layers of the outer portions and to finely machine underlying arcuate surfaces of the part, and the part is cut transversely to produce silicone elements.

Embodiments provide a method of analyzing a shape of a wafer, including: measuring a cross-sectional shape of a plurality of wafers; obtaining a first angle formed by a first line connecting a first point to a second point having a maximum curvature in an edge region of the wafer and a front surface of the wafer; forming a thin film layer on a surface of each of the wafers; measuring a thickness profile of an edge region of the wafer on which each of the thin film layers is formed; and confirming a wafer having a smallest maximum thickness profile of the thin film layer among the plurality of wafers.

A wafer structure and a trimming method thereof are provided. The trimming method includes the following steps. A first wafer having a first surface and a second surface opposite to the first surface is provided. A first pre-trimming mark is formed on the first surface of the first wafer, where forming the first pre-trimming mark includes forming a plurality of recesses arranged as a path along a periphery of the first wafer. The first wafer is trimmed on the first pre-trimming mark and along the path of the first pre-trimming mark to remove a portion of the first wafer and form a trimmed edge having first regions thereon.

A plasma processing apparatus is provided. The apparatus includes a lower sheltering module. The apparatus further includes an upper sheltering module arranged adjacent to the lower sheltering module. The apparatus includes an upper plate and an upper PEZ ring positioned around the upper plate. The apparatus also includes a shadowing unit that includes a number of engaging parts in the form of arcs detachably positioned on the upper PEZ ring. In addition, the apparatus includes a plasma generation module for generating plasma in the peripheral region of the lower sheltering module and the upper sheltering module.

A silicon carbide single crystal substrate includes a first main surface, a second main surface, and a circumferential edge portion. The second main surface is opposite to the first main surface. The circumferential edge portion connects the first main surface and the second main surface. The circumferential edge portion has a linear orientation flat portion, a first arc portion having a first radius, and a second arc portion connecting the orientation flat portion and the first arc portion and having a second radius smaller than the first radius, when viewed along a direction perpendicular to the first main surface.

The inventive concept provides a method for treating a substrate. The method includes removing a film on the substrate by applying a pulsed laser to the rotating substrate, in which thickness of the film to be removed is measured and pulse energy of the pulsed laser is selected based on the measured thickness of the film.

A method is used to prepare the remainder of a donor substrate, from which a layer has been removed by delamination in a plane weakened by ion implantation. The remainder comprises, on a main face, an annular step corresponding to a non-removed part of the donor substrate. The method comprises the deposition of a smoothing oxide on the main face of the remainder in order to fill the inner space defined by the annular step and to cover at least part of the annular step, as well as heat treatment for densification of the smoothing oxide. A substrate is produced by the method, and the substrate may be used in subsequent processes.