A substrate processing method is for processing a substrate that includes a first region and a second region with compositions different from each other. The substrate processing method includes (a) preferentially forming, by a substrate processing apparatus, a first deposit on the first region; (b) forming, after (a), a second deposit on the second region, the second deposit containing fluorine and the second deposit being different from the first deposit; and (c) removing, after (b), the second deposit and at least a part of the second region. The steps (a)-(c) are repeated, in order, in a case that a stop condition is not satisfied.

Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.

Provided are a layer structure including a carbon-based material, a method of manufacturing the layer structure, an electronic device including the layer structure, and an electronic apparatus including the electronic device. The layer structure may include a lower layer, an ion implantation layer in the lower layer, and a carbon-based material layer on the ion implantation layer, wherein the ion implantation layer includes carbon. The ion implantation layer may include a trench, and the carbon-based material layer may be provided in the trench. The carbon-based material layer may be formed to coat an inner surface of the trench. The carbon-based material layer may fill at least a portion of the trench. The ion implantation concentration of the ion implantation layer may be uniform as a whole. The ion implantation layer may have an ion implantation concentration gradient in a given direction.

Methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, use a plasma-enhanced chemical vapor deposition (PECVD) process. In particular, the methods utilize a combination of RF AC power and pulsed DC power to create a plasma which deposits an amorphous carbon layer with a high ratio of sp3 (diamond-like) carbon to sp2 (graphite-like) carbon. The methods also provide for lower processing pressures, lower processing temperatures, and higher processing powers, each of which, alone or in combination, may further increase the relative fraction of sp3 carbon in the deposited amorphous carbon layer. As a result of the higher sp3 carbon fraction, the methods provide amorphous carbon layers having improved density, rigidity, etch selectivity, and film stress as compared to amorphous carbon layers deposited by conventional methods.

Exemplary semiconductor processing methods may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may define one or more recessed features. The methods may include providing a second precursor to the processing region. The methods may include forming a plasma of the carbon-containing precursor and the second precursor in the processing region. Forming the plasma of the carbon-containing precursor and the second precursor may be performed at a plasma power of greater than or about 500 W. The methods may include depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more recessed features. The methods may include, subsequent depositing the carbon-containing material for a first period of time, applying a bias power while depositing the carbon-containing material for a second period of time.

A semiconductor device and method of forming thereof includes a first fin and a second fin each extending from a substrate. A first gate segment is disposed over the first fin and a second gate segment is disposed over the second fin. An interlayer dielectric (ILD) layer is adjacent the first gate segment and the second gate segment. A cut region (e.g., opening or gap between first gate structure and the second gate structure) extends between the first and second gate segments. The cut region has a first portion has a first width and a second portion has a second width, the second width is greater than the first width. The second portion interposes the first and second gate segments and the first portion is defined within the ILD layer.

Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.

A deposition chamber includes a vacuum enclosure, an electrostatic chuck having a flat top surface located within a vacuum enclosure, a lift-and-rotation unit extending through or laterally surrounding the electrostatic chuck at a position that is laterally offset from a vertical axis passing through a geometrical center of the electrostatic chuck, a gas supply manifold configured to provide influx of gas into the vacuum enclosure, and a pumping port connected to the vacuum enclosure.

In a method, a mask is formed on a microstructure over a substrate. The mask includes a first pattern over a first region of the microstructure and a second pattern over a second region of the microstructure. A first etching process is performed to etch the microstructure by providing an etching gas and applying a first bias voltage to the substrate according to the first and second patterns of the mask. A protective layer is subsequently formed by providing a deposition gas and applying a second bias voltage to the substrate to cover the first pattern of the mask. A second etching process is performed to transfer the second pattern of the mask further into the second region of the microstructure. The deposition gas has a higher carbon to fluorine ratio than the etching gas, and the second bias voltage is smaller than the first bias voltage.