Exemplary methods of semiconductor processing may include providing a boron-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. The methods may include thermally reacting the boron-containing precursor and the carbon-containing precursor at a temperature below about 650° C. The methods may include forming a boron-and-carbon-containing layer on the substrate.

Provided are electronic devices and methods of manufacturing the same. An electronic device may include a substrate, a gate electrode on the substrate, a ferroelectric layer between the substrate and the gate electrode, and a carbon layer between the substrate and the ferroelectric layer. The carbon layer may have an sp.sup.2 bonding structure.

Provided are methods of making a liquid and liquid vapor-proof material, and relates long-term implantable electronic devices. The method comprisies providing a first substrate having a first-side encapsulating layer supported by at least a portion of the first substrate; providing a material onto the first-side encapsulating layer; providing a second substrate having a second-side encapsulating layer supported by at least a portion of the second substrate; covering an exposed surface of the material provided onto the first-side encapsulation layer with the second-side encapsulating layer; wherein said encapsulating layers are substantially defect free so that liquid or liquid vapor is prevented from passing through each of the encapsulating layers; thereby making the liquid or liquid vapor-proof material.

A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N.sub.2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

Improved process flows and methods are provided herein for forming a passivation layer on sidewall surfaces of openings formed in an amorphous carbon layer (ACL) to avoid bowing during an ACL etch process. More specifically, improved process flows and methods are provided to form a silicon-containing passivation layer on sidewall surfaces of the openings created within the ACL without utilizing atomic layer deposition (ALD) techniques or converting the silicon-containing passivation layer to an oxide or a nitride. As such, the improved process flows and methods disclosed herein may be used to protect the sidewall surfaces of the ACL and prevent bowing during the ACL etch process, while also reducing processing time and improving throughput.

Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

Embodiments of the disclosed technology include patterning a graphene sheet for biosensor and electronic applications using lithographic patterning techniques. More specifically, the present disclosure is directed towards the method of patterning a graphene sheet with a hard mask metal layer. The hard mask metal layer may include an inert metal, which may protect the graphene sheet from being contaminated or damaged during the patterning process.

Methods for fabricating a 3D NAND flash memory are disclosed. The method includes the steps of forming a hardmask pattern on the hardmask layer, and using the hardmask pattern to form apertures in the alternating layers by selectively plasma etching the alternating layers versus the hardmask layer using a hydrofluorocarbon etching gas selected from the group consisting of 1,1,1,3,3,3-hexafluoropropane (C.sub.3H.sub.2F.sub.6), 1,1,2,2,3,3-hexafluoropropane (iso-C.sub.3H.sub.2F.sub.6), 1,1,1,2,3,3,3-heptafluoropropane (C.sub.3HF.sub.7), and 1,1,1,2,2,3,3-heptafluoropropane (iso-C.sub.3HF.sub.7), wherein the first etching layer comprises a material different from that of the second etching layer.

In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes performing a first process of forming a concave portion in the first film and forming a second film on a surface of the first film that is exposed in the concave portion by using a first gas containing a carbon element and a fluorine element. The method further includes performing a second process of exposing the second film to a second gas containing a hydrogen element or a fluid generated from the second gas.

Systems and method are provided for depositing metal on GaN transistors after gate formation using a metal nitride Schottky gate. Embodiments of the present disclosure use a “diamond last” process using thermally stable metal nitride gate electrodes to enable thicker heat spreading films and facilitate process integration. In an embodiment, the “diamond last” process with high thermal conductivity diamond is enabled by the integration of thermally stable metal-nitride gate electrodes.