One or more semiconductor processing tools may form a deep trench within a silicon wafer. The one or more semiconductor processing tools may deposit a first insulating material within the deep trench. The one or more semiconductor processing tools may form, after forming the deep trench with the silicon wafer, a shallow trench above the deep trench. The one or more semiconductor processing tools may deposit a second insulating material within the shallow trench.

The present disclosure provides a method, which includes forming a first fin structure and a second fin structure over a substrate, which has a first trench positioned between the first and second fin structures. The method also includes forming a first dielectric layer within the first trench, recessing the first dielectric layer to expose a portion of the first fin structure, forming a first capping layer over the exposed portion of the first fin structure and the recessed first dielectric layer in the first trench, forming a second dielectric layer over the first capping layer in the first trench while the first capping layer covers the exposed portion of the first fin feature and removing the first capping layer from the first fin structure.

Methods of forming an integrated device, and in particular forming one or more sample wells in an integrated device, are described. The methods may involve forming a metal stack over a cladding layer, forming an aperture in the metal stack, forming first spacer material within the aperture, and forming a sample well by removing some of the cladding layer to extend a depth of the aperture into the cladding layer. In the resulting sample well, at least one portion of the first spacer material is in contact with at least one layer of the metal stack.

A method includes forming a tri-layer. The tri-layer includes a bottom layer; a middle layer over the bottom layer; and a top layer over the middle layer. The top layer includes a photo resist. The method further includes removing the top layer; and removing the middle layer using a chemical solution. The chemical solution is free from potassium hydroxide (KOH), and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride.

Systems, apparatuses, and methods related to semiconductor structure formation are described. An example apparatus includes a structural material for a semiconductor device. The structural material includes an orthosilicate derived oligomer having a number of oxygen (O) atoms each chemically bonded to one of a corresponding number of silicon (Si) atoms and a chemical bond formed between an element from group 13 of a periodic table of elements (e.g., B, Al, Ga, In, and Tl) and the number of O atoms of the orthosilicate derived oligomer. The chemical bond crosslinks chains of the orthosilicate derived oligomer to increase mechanical strength of the structural material, relative to the structural material formed without the chemical bond to crosslink the chains, among other benefits described herein.

There is provided a technique that includes forming a film in a concave portion provided on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming an adsorption inhibition layer by supplying an adsorption inhibitor, which inhibits adsorption of a precursor, to the substrate and adsorbing the adsorption inhibitor on adsorption sites of an upper portion in the concave portion; (b) forming a first layer by supplying the precursor to the substrate and adsorbing the precursor on adsorption sites existing in the concave portion in which the adsorption inhibition layer is formed; and (c) modifying the adsorption inhibition layer and the first layer into a second layer by supplying a first reactant, which chemically reacts with both the adsorption inhibition layer and the first layer, to the substrate.

Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 ° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 Å/min.

A method for manufacturing a semiconductor device includes forming a trench in a semiconductor wafer; and forming a first insulating film by thermally oxidizing the semiconductor wafer. The first insulating film covers an inner surface of the trench so that a first space remains in the trench. The first insulating film has a recessed portion at the bottom of the trench. The method further includes forming a semiconductor layer on the first insulating film, the semiconductor layer filling the first space and the recessed portion; forming a second space in the trench by selectively removing the semiconductor layer so that a portion of the semiconductor layer remains in the recessed portion; forming a second insulating film in the recessed portion by thermally oxidizing the portion of the semiconductor layer; and forming a first conductive body in the trench, the first conductive body filling the second space.

Selective gas etching for self-aligned pattern transfer uses a first block and a separate second block formed in a sacrificial layer to transfer critical dimensions to a desired final layer using a selective gas etching process. The first block is a first hardmask material that can be plasma etched using a first gas, and the second block is a second hardmask material that can be plasma etched using a second gas separate from the first gas. The first hardmask material is not plasma etched using the second gas, and the second hardmask material is not plasma etched using the first gas.

There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, introducing a second reactant to the substrate with a second dose, wherein the first and the second doses overlap in an overlap area where the first and second reactants react and leave an initially substantially unreacted area where the first and the second areas do not overlap; introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant to form deposited material; and etching the deposited material. An apparatus for filling a recess is also disclosed.