There is provided a technique that includes forming a film containing a first element and oxygen on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a modifying agent to the substrate to form, on the substrate, an adsorption layer containing the modifying agent physically adsorbed on a surface of the substrate; (b) supplying a precursor containing the first element to the substrate and causing the precursor to react with the surface of the substrate to form a first layer containing the first element on the substrate; and (c) supplying an oxidizing agent to the substrate and causing the oxidizing agent to react with the first layer to modify the first layer into a second layer containing the first element and oxygen.

A substrate processing method includes: preparing a substrate which includes a base having an epitaxial layer formed by epitaxial growth, and an insulating film formed on the base and having a penetration portion that exposes the epitaxial layer; forming a silicon film on a surface of the epitaxial layer exposed from the penetration portion rather than a side wall of the penetration portion; and forming a metal film on the silicon film formed on the surface of the epitaxial layer rather than the side wall of the penetration portion, and causing the silicon film to react with the metal film to form a metal silicide film.

Methods and precursors for depositing metal fluoride films on a substrate surface are described. The method includes exposing the substrate surface to a metal precursor and a fluoride precursor. The fluoride precursor is volatile at a temperature in a range of from 20° C. to 200° C. The metal precursor reacts with the fluoride precursor to form a non-volatile metal fluoride film.

A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).

A method for producing a crystalline oxide semiconductor film in which, a crystalline oxide semiconductor layer and a light absorbing layer are laminated on a substrate, the light absorbing layer is irradiated with light to decompose the light absorbing layer and separate the crystalline oxide semiconductor layer and the substrate to produce a crystalline oxide semiconductor film. This provides a method for industrially advantageously producing a crystalline oxide semiconductor film, for example, a crystalline oxide semiconductor film useful for a semiconductor device (particularly a vertical element).

Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

The present disclosure provides a method for forming a semiconductor structure. The method includes the following operations. A metal layer is formed. An adhesion-enhancing layer is formed over the metal layer by a silicide operation. A dielectric stack is formed over the adhesion-enhancing layer. A trench is formed in the dielectric stack by removing a portion of dielectric stack aligning with the metal layer. A barrier layer is formed conforming to the sidewall of the trench. A high-k dielectric layer is formed conforming to the barrier layer. A contact is formed in the trench and be connected to the metal layer.

A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface opposed to each other, and a porous metal oxide film on a side of the first main surface of the semiconductor substrate, the porous metal oxide film having a plurality of pores. The semiconductor substrate has a connection electrically connected to the porous metal oxide film, and the semiconductor substrate is configured to provide a power supply path from the second main surface to the connection on the first main surface.

A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack includes a first dielectric layer, a work function layer, and a gate electrode sequentially stacked over the substrate, the first dielectric layer is between the work function layer and the substrate, the work function layer is between the first dielectric layer and the gate electrode, the first dielectric layer has a thin portion and a thick portion, the thin portion is thinner than the thick portion and surrounds the thick portion. The semiconductor device structure includes. The semiconductor device structure includes an insulating layer over the substrate and wrapping around the gate stack. The thin portion is between the thick portion and the insulating layer.

There is provided a technique that includes: forming an oxide film containing an atom X of a precursor on a substrate by performing a cycle a predetermined number of times. The cycle including non-simultaneously performing: (a) forming a first layer containing a component in which a first group is bonded to the atom X on the substrate by supplying the precursor having a molecular structure in which the first and second groups are bonded to the atom X, to the substrate, the first group containing an alkoxy group, and the second group containing at least one of an amino group, an alkyl group, a halogeno group, a hydroxy group, a hydro group, an aryl group, a vinyl group, and a nitro group; and (b) forming a second layer containing the atom X by supplying an oxidizing agent to the substrate to oxidize the first layer.