A three-dimensional memory device and a method for manufacturing the same are provided. The method includes steps as follows. A semiconductor structure including a substrate and a stacked structure on the substrate is provided. The stacked structure includes alternately stacked gate layers and dielectric layers, or alternately stacked dummy gate layers and dielectric layers. The dummy gate layers are replaceable by the gate layers. A groove is formed in a gate line slit region of the stacked structure. The groove penetrates through the gate layers and multiple layers of the dielectric layers, or through the dummy gate layers and multiple layers of the dielectric layers. An insulating layer is formed on a surface of the stacked structure and in the groove. A depression is formed on a surface of the insulating layer above the groove away from the substrate. The insulating layer is polished to flatten the depression.

A semiconductor device includes a semiconductor substrate, a source/drain region, a source/drain contact, a conductive via and a first polymer layer. The source/drain region is in the semiconductor substrate. The source/drain contact is over the source/drain region. The source/drain via is over the source/drain contact. The first polymer layer extends along a first sidewall of the conductive via and is separated from a second sidewall of the conductive via substantially perpendicular to the first sidewall of the conductive via.

The present disclosure generally relates to substrate processing methods, such as etching methods with noble gases at low temperatures. In an aspect, the method includes exposing a substrate, a first layer comprising a gas, and a fluorine-containing layer to energy to form a passivation layer while maintaining the substrate at conditions encompassing a triple point temperature of the gas, the substrate positioned in a processing region of a processing chamber. The method further includes etching the substrate with ions.

A semiconductor device and method of manufacture are provided. In embodiments a first liner is deposited to line a recess between a first semiconductor fin and a second semiconductor fin, the first liner comprising a first material. The first liner is annealed to transform the first material to a second material. A second liner is deposited to line the recess, the second liner comprising a third material. The second liner is annealed to transform the third material to a fourth material.

A method for manufacturing an electronic device includes at least a step (1) of preparing a structure comprising (i) an adhesive film provided with a base material layer, an adhesive resin layer (A) provided on a first surface side of the base material layer, and an adhesive resin layer (B) provided on a second surface side of the base material layer, (ii) an electronic component attached to the adhesive resin layer (A) of the adhesive film, and (iii) a support substrate attached to the adhesive resin layer (B) of the adhesive film; a step (2) of sealing the electronic component with a sealing material; a step (3) of peeling the support substrate from the structure by reducing an adhesive force of the adhesive resin layer (B) by applying an external stimulus; and a step (4) of peeling the adhesive film from the electronic component.

A method for activating an exposed layer of a structure including a provision of a structure including an exposed layer, a deposition of a layer based on a material of formula Si.sub.aY.sub.bX.sub.c, with X chosen from among fluorine F and chlorine Cl, and Y chosen from among oxygen O and nitrogen N, a, b and c being non-zero positive integers, a treatment of the layer Si.sub.aY.sub.bX.sub.c by an activation plasma based on at least one from among oxygen and nitrogen, the parameters of the deposition of the layer Si.sub.aY.sub.bX.sub.c being chosen so as to obtain a sufficiently low material density such that the layer Si.sub.aY.sub.bX.sub.c is at least partially consumed by the activation plasma.

An apparatus for processing a gas includes: a mounting part installed in a processing container and on which a substrate is mounted; a first gas flow path where a first gas is supplied from a first gas supply mechanism to an upstream portion of the first gas flow path, and a downstream portion of the first gas flow path is branched to form first branch paths; a second gas flow path where a second gas is supplied from a second gas supply mechanism to an upstream portion of the second gas flow path, and a downstream portion of the second gas flow path is branched to form second branch paths; an annular mixing chamber to which a discharge path is connected; and a gas discharge part discharging a mixture gas.

A semiconductor device includes a semiconductor substrate, a source/drain region, a source/drain contact and a conductive via and a first polymer layer. The source/drain region is in the semiconductor substrate. The source/drain contact is over the source/drain region. The conductive via is over the source/drain contact. From a top view, the conductive via has two opposite long sides and two opposite short sides connecting the long sides, and the short sides are shorter than the long sides and more curved than the long sides.

Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

Disclosed is a processing apparatus. The processing apparatus includes: a load port in which a conveyance container accommodating a plurality of semiconductor wafers is placed; a dummy wafer storage area in which a conveyance container accommodating a plurality of dummy wafers is placed; a normal-pressure conveyance room in which a first conveyance arm is installed; an equipment that processes the plurality of semiconductor wafers in a state where the semiconductor wafers and the dummy wafers which are conveyed are placed in slots, respectively; and a controller that controls each component of the processing apparatus. The controller classifies the dummy wafers accommodated in the conveyance container into a plurality of groups, and controls the first conveyance arm to preferentially convey the dummy wafers within one of the classified groups to the equipment and, in replacing the dummy wafers, to perform replacement of the dummy wafers group to group as classified.