The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.

Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative and a crosslinking agent. Further disclosed is a process for forming a hard-mask.

A coating film forming apparatus includes a carry-in/out section in which a substrate is carried in and carried out; a periphery coating module configured to form a ring-shaped coating film by supplying a coating liquid along a periphery of the substrate based on a processing parameter for controlling a coating state by the coating film; an imaging module configured to image the substrate on which the ring-shaped coating film is formed; a transfer mechanism configured to transfer the substrate; and a controller configured to output a control signal to perform a process of forming the ring-shaped coating film on the substrate based on the processing parameter having different values and imaging the substrate by the imaging module, and configured to determine, based on an imaging result of the substrate, a value of the processing parameter for forming the ring-shaped coating film on the substrate in the periphery coating module.

The present invention relates to a composition for manufacturing a passivation layer, and specifically, to a composition for manufacturing a passivation layer and a passivation layer formed using the composition, which simultaneously exhibit effects such as a low dielectric constant, a low water absorption rate, excellent pattern formability, and excellent adhesion to an adherend surface.

A composition for forming a film capable of effectively functioning as a resist underlayer film exhibiting resistance to a solvent in a composition for forming a resist film serving as an upper layer, favorable etching property to a fluorine-containing gas, and favorable lithographic property. A film-forming composition including a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane compound by using two or more acidic compounds, and a solvent, the film-forming composition being characterized in that: the hydrolyzable silane compound contains an amino-group-containing silane of the following Formula (1):

R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4−(a+b)  (1)

A method of manufacturing a semiconductor device includes detecting, using a sensor, liquid spin on glass (SOG) outside of a dispenser nozzle in an abnormal length relative to the dispenser nozzle. The method further includes adjusting, using a controller, a suck back (SB) valve to withdraw liquid SOG from the abnormal length. The method further includes comparing a sensed amount of liquid SOG deposited onto the semiconductor wafer from the dispenser nozzle with at least one set operating parameter. The method further includes pausing sensing of a duration of dispensing liquid SOG onto the semiconductor wafer based on the sensed amount of liquid SOG deposited being outside the at least one operating parameter.

This document describes the fabrication and use of ceramic stabilizing layer fabricated right on the product silicon wafer to facilitate its use as a substrate for fabrication of gallium nitride films. A ceramic layer is formed and then attached to a single crystal silicon substrate to form a composite silicon substrate that has coefficient of thermal expansion comparable with GaN. The composite silicon substrates prepared by this invention are uniquely suited for use as growth substrates for crack-free gallium nitride films, benefitting from compressive stresses produced by choosing a ceramic having a desired higher coefficient thermal expansion than those of silicon and gallium nitride.

The present disclosure is generally related to semiconductor devices, and more particularly to a dielectric material formed in semiconductor devices. The present disclosure provides methods for forming a dielectric material layer by a cyclic spin-on coating process. In an embodiment, a method of forming a dielectric material on a substrate includes spin-coating a first portion of a dielectric material on a substrate, curing the first portion of the dielectric material on the substrate, spin-coating a second portion of the dielectric material on the substrate, and thermal annealing the dielectric material to form an annealed dielectric material on the substrate.

The present invention provides a wafer processing laminate including a wafer having a surface on which unevenness and/or a protective organic film layer (A) is formed, and an organic film layer (B) with a film thickness of less than 100 nm formed on the wafer, the organic film layer (B) including a fluorescent agent that emits visible light by irradiation with ultraviolet light. This provides a wafer processing laminate in which the coverage of the thin film can be checked by a nondestructive and convenient method to make it possible to reuse the wafer, even when the thin film with a film thickness of less than 100 nm is formed onto a wafer having an uneven surface on which a circuit is formed and/or an organic film as an underlayment.

A method of controlling a dispensing unit is used to dispense material on a substrate. The method includes connecting a solenoid coil of a pneumatically-driven pump to an amplifier output of a dispensing system, and driving the solenoid coil with the amplifier to a cause the pneumatically-driven pump to dispense material on a substrate. The method further may include commanding an idle current to flow in the solenoid coil during periods of inactivity. The idle current may be sufficient to cause warming of the solenoid coil, yet not sufficient to activate the solenoid to an engaged position. The method further may include commanding a first current level to flow in the solenoid coil to rapidly activate the solenoid, and commanding a second current level to flow in the solenoid coil after the solenoid is activated.