A method and corresponding spin coater is provided for forming a layer of uniform thickness on a semiconductor wafer having a central region and an outer edge. The method includes: depositing a flowable coating material on the semiconductor wafer at the central region, the layer being formed from the coating material; rotating the semiconductor wafer about an axis such that a centrifugal force urges the coating material to spread from the central region toward the outer edge of the semiconductor wafer; and creating a pressure differential in one or more regions proximate to the outer edge of the semiconductor wafer. The pressure differential may be created by a wall with pins holes, the wall at least partially encircling the outer edge of the semiconductor wafer.

A composition for use in selective modification of a base material surface includes a polymer having, at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with a metal, and a solvent.

A method includes forming a gate structure and an interlayer dielectric (ILD) layer over a substrate; selectively forming an inhibitor over the gate structure; performing an atomic layer deposition (ALD) process to form a dielectric layer over the ILD layer, wherein in the ALD process the dielectric layer has greater growing rate on the ILD than on the inhibitor; and performing an atomic layer etching (ALE) process to etch the dielectric layer until a top surface of the inhibitor is exposed, in which a portion of the dielectric layer remains on the ILD layer after the ALE process is complete.

A laminate that can be used for diffusing an impurity diffusion component into a semiconductor substrate and manufactured by a method with good film formability, and which allows sufficient diffusion of the impurity diffusion component; a method for manufacturing the laminate; and a method for manufacturing a semiconductor substrate using the laminate. The laminate includes a diffusion-undergoing semiconductor substrate, an amine compound layer, and an impurity diffusion component layer, the amine compound layer is in contact with one main surface of the diffusion-undergoing semiconductor substrate, the impurity diffusion component layer is in contact with a main surface of the amine compound layer, the main surface is not in contact with the diffusion-undergoing semiconductor substrate, and the amine compound layer includes an amine compound including two or more nitrogen atoms and having an amino group constituted by at least one of the two or more nitrogen atoms; and/or an amine compound residue having one or more amino groups and bonding to the main surface via a covalent bond.

A method of processing a substrate that includes: loading the substrate in a processing system, the substrate including a metal having a metal surface and a first dielectric material having a dielectric material surface, the metal surface and the dielectric material surface being at the same level; etching the metal to form a recessed metal surface below the dielectric material surface; selectively forming a self-assembled monolayer (SAM) on the recessed metal surface using a spin-on process; and depositing a dielectric film including a second dielectric material on the dielectric material surface.

A semiconductor structure includes a semiconductor substrate, a metal layer, an interlayer dielectric (ILD) layer. The metal layer is disposed over the semiconductor substrate. The ILD layer is over the semiconductor substrate and laterally surrounding the metal layer, in which the ILD layer has a first portion in contact with a first sidewall of the metal layer and a second portion in contact with a second sidewall of the metal layer opposite to the first sidewall of the metal layer, and a width of the first portion of the ILD layer decreases as a distance from the semiconductor substrate increases.

Equipment for coating a wafer is disclosed, where the equipment includes a wafer holder configured to spin the wafer while holding the wafer; a rotary drive configured to spin the wafer holder; a nozzle configured to pour liquid onto a surface to be coated of the wafer; an annular duct disposed circumferentially around the wafer when the wafer is spun by the wafer holder, the duct configured to collect material ejected off an edge of the wafer; and an air knife disposed proximate a backside, the backside being opposite the side to be coated, where the air knife is configured to blow an air curtain through a slot onto an exposed edge region of the backside at a grazing angle of incidence to flow gas radially outward along the backside toward the annular duct.

The present disclosure relates to a method of preparing a monomolecular nano-thin film, including: coating, on a substrate, a dispersion solution containing a compound represented by the following Chemical Formula 1; and performing annealing to the coated substrate: ##STR00001## in the above Chemical Formula 1, X and Y are each independently nitrogen, carbon, sulfur, or oxygen, R.sub.1 and R.sub.2 are each independently hydrogen, oxygen, a hydroxy group (—OH), or a linear or branched C.sub.1 to C.sub.10 alkyl group.

In general, according to one embodiment, there is provided a semiconductor device including a substrate, an insulating layer formed above the substrate, and a conductive layer provided in the insulating layer. The insulating layer includes at least one cellulose fiber.

A first layer is located over a substrate. The first layer includes a first dielectric component and a first conductive component. A first etching stop layer is located over the first dielectric component. A metal capping layer is located over the first conductive component. A second etching stop layer is located over the first etching stop layer and over the metal capping layer. A second layer is located over the second etching stop layer. The second layer includes a second dielectric component and a second conductive component. A third conductive component electrically interconnects the second conductive component to the first conductive component.