The invention provides a method for forming a surface oxide layer on an amorphous silicon including steps: using a HF acid to clean a surface of the amorphous silicon; using a water to clean the surface of the amorphous silicon being cleaned by the HF acid; drying the surface of the amorphous silicon after being cleaned by the water; using an extreme ultraviolet lithography to form a first oxide layer on the surface of the amorphous silicon after being dried; using an oxidizing solution to clean the surface of the amorphous silicon with the first oxide layer to thereby form a second oxide layer; and drying the surface of the amorphous silicon with the second oxide layer. By using the extreme ultraviolet lithography to form the first oxide layer, the surface of the amorphous silicon is given with strong hydrophilicity and therefore the distribution of water would be uniform.

Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.

Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase chalcogen precursor to passivate the high-mobility semiconductor surface.

Horizontal gate-all-around devices and methods of manufacturing the same are described. The hGAA devices comprise an oxidize layer on a semiconductor material between source regions and drain regions of the device. The method includes radical plasma oxidation (RPO) of semiconductor material layers between source regions and drain regions of an electronic device.

Techniques herein provide a chamber and substrate cleaning solution for etching and removing byproducts between separate etching steps. Such techniques include using a cleaning step based on fluorine chemistry, which is executed in between separate etch steps or divided etch steps. Such a technique can be executed in situ for improved efficiency. Other benefits include increasing etching depth/aspect ratios, and preventing post-etching defects including physical contact with neighboring gates, etc. Techniques herein are especially beneficial when applied to relatively small feature openings.

A method of processing includes: providing a substrate having a contaminant material disposed on the copper surface to a substrate support within a hot wire chemical vapor deposition (HWCVD) chamber; providing hydrogen (H.sub.2) gas to the HWCVD chamber; heating one or more filaments disposed in the HWCVD chamber to a temperature sufficient to dissociate the hydrogen (H.sub.2) gas; exposing the substrate to the dissociated hydrogen (H.sub.2) gas to remove at least some of the contaminant material from the copper surface; cooling the one or more filaments to room temperature; exposing the substrate in the HWCVD chamber to one or more chemical precursors to deposit a self-assembled monolayer atop the copper surface; and depositing a second layer atop the substrate.

In one aspect, a method, system and apparatus are disclosed for selectively depositing a layer of organic material on a substrate including a first surface and a second surface by a cyclic deposition process, the process includes providing a substrate in a reaction chamber, providing a first vapor-phase precursor in the reaction chamber, and providing a second vapor-phase precursor in the reaction chamber, where the first and second vapor-phase precursors form the organic material selectively on the first surface relative to the second surface, and where the first vapor-phase precursor includes a diamine or triamine compound.

Embodiments described herein provide a self-limiting and saturating SiO.sub.x bilayer process which does not require the use of a plasma or catalyst and that does not lead to undesirable substrate oxidation. Methods of the disclosure do not produce SiO.sub.2, but instead produce a saturated SiO.sub.x film with OH termination to make substrate surfaces highly reactive towards metal ALD precursors to seed high nucleation and growth of gate oxide ALD materials.

Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.

A method for manufacturing a semiconductor device is provided. The method includes a step of performing a chemical mechanical polishing process on a first silicon oxide layer to form a planar surface layer; surface treatment is performed on the planar surface layer to form a treated planarization layer, and a second silicon oxide layer is formed on the treated planarization layer.