Disclosed is a substrate processing apparatus including: a processing chamber that accommodates a substrate; a light source that radiates energy rays for a processing to the substrate in the processing chamber; a rotation driving unit that rotates at least one of the substrate and the light source around an axis intersecting with the substrate in the processing chamber; an opening/closing mechanism that switches between an open state and a closed state; and a controller configured to control the opening/closing mechanism to switch between the open state and the closed state, to increase a light emission amount of the light source in synchronization with the switch of the open state to the closed state by the opening/closing mechanism, and to decrease the light emission amount of the light source in synchronization with the switch of the closed state to the open state by the opening/closing mechanism.

A method for forming a semiconductor structure is provided. The method includes forming a first layer over a semiconductor substrate. The first layer is made of a first material. The method also includes forming a second layer over the first layer. The second layer is made of a second material that is different from the first material. The second layer has a first opening exposing a portion of a top surface of the first layer. The method also includes heating the first layer and the second layer with a laser beam, depositing a third layer over the second layer and covering a sidewall of the first opening, and etching the first layer through the first opening to form a second opening in the first layer.

The present disclosure describes a method that includes forming a dielectric layer over a contact region on a substrate; etching the dielectric layer to form a contact opening to expose the contact region; and pre-cleaning the exposed contact region to remove a residual material formed by the etching. During the pre-cleaning, the contact region is exposed to an inductively coupled radio frequency (RF) plasma. Also, during the pre-cleaning, a direct current power supply unit (DC PSU) provides a bias voltage to the substrate and a magnetic field is applied to the inductively coupled RF plasma to collimate ions.

An object of the present invention is to provide a liquid chemical exhibiting excellent defect inhibitive performance even in a case of being applied to a resist process by EUV exposure. Another object thereof is to provide a method for producing a liquid chemical. The liquid chemical of the present invention includes an organic solvent, and metal-containing particles containing a metal atom, in which the number of metal nanoparticles contained in the metal-containing particles and having a particle size of 0.5 to 17 nm is 1.010.sup.1 to 1.010.sup.9 particles/cm.sup.3, based on the number of the particles per unit volume of the liquid chemical.

A method for preparing a silicon nitride film with a high deposition rate and a reduced damage to the substrate and/or the underlying layer formed under the silicon nitride film. The method for preparing a silicon nitride film contains the steps of irradiating a nitride with an ultraviolet light, and contacting the nitride irradiated with the ultraviolet light and a hydrogenated cyclic silane represented by a general formula Si.sub.nH.sub.2n, wherein n is 5, 6, or 7.

The present disclosure describes a method that includes forming a dielectric layer over a contact region on a substrate; etching the dielectric layer to form a contact opening to expose the contact region; and pre-cleaning the exposed contact region to remove a residual material formed by the etching. During the pre-cleaning, the first contact region is exposed to an inductively coupled radio frequency (RF) plasma. Also, during the pre-cleaning, a direct current power supply unit (DC PSU) provides a bias voltage to the substrate and a magnetic field is applied to the inductively coupled RF plasma to collimate ions.

A germanium semiconductor layer doped with a dopant such as boron becomes a p-type semiconductor. The semiconductor layer is preheated at a preheating temperature ranging from 200 C. to 300 C., and then heated at a treatment temperature ranging from 500 C. to 900 C., by extremely short-time irradiation of flash light. While oxygen is unavoidably mixed in germanium and becomes a thermal donor at 300 C. to 500 C., the semiconductor layer stays in a temperature range of 300 C. to 500 C. for a negligibly short period of time due to an extremely short irradiation time of 0.1 milliseconds to 100 milliseconds by the flash light. Therefore, the thermal donor can be prevented from being generated in the germanium semiconductor layer.

Disclosed is a substrate processing apparatus including: a processing chamber that accommodates a substrate; a light source that radiates energy rays for a processing to the substrate in the processing chamber; a rotation driving unit that rotates at least one of the substrate and the light source around an axis intersecting with the substrate in the processing chamber; an opening/closing mechanism that switches between an open state and a closed state; and a controller configured to control the opening/closing mechanism to switch between the open state and the closed state, to increase a light emission amount of the light source in synchronization with the switch of the open state to the closed state by the opening/closing mechanism, and to decrease the light emission amount of the light source in synchronization with the switch of the closed state to the open state by the opening/closing mechanism.

An organic EL display device including a plurality of pixels includes an element substrate including a substrate, and a plurality of organic EL elements supported by the substrate and respectively located in the plurality of pixels; and a thin film encapsulation structure covering the plurality of pixels. The thin film encapsulation structure includes a first inorganic barrier layer, an organic barrier layer in contact with a top surface of the first inorganic barrier layer, the organic barrier layer including a plurality of solid portions distributed discretely, and a second inorganic barrier layer in contact with the top surface of the first inorganic barrier layer and top surfaces of the plurality of solid portions of the organic barrier layer. The organic barrier layer is black.

The present disclosure provides a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the following operations. An intermediate layer is formed in the semiconductor device. A field is applied to the intermediate layer, wherein the field source does not contact the semiconductor device. The polarity of the intermediate layer is changed by the field to form a desired dipole orientation in the intermediate layer.