A method for forming a semiconductor structure is provided. The method includes forming a first layer over a semiconductor substrate. The first layer is made of a first material. The method also includes forming a second layer over the first layer. The second layer is made of a second material that is different from the first material. The second layer has a first opening exposing a portion of a top surface of the first layer. The method also includes heating the first layer and the second layer with a laser beam, depositing a third layer over the second layer and covering a sidewall of the first opening, and etching the first layer through the first opening to form a second opening in the first layer.

An organic EL display device including a plurality of pixels includes an element substrate including a substrate, and a plurality of organic EL elements supported by the substrate and respectively located in the plurality of pixels; and a thin film encapsulation structure covering the plurality of pixels. The thin film encapsulation structure includes a first inorganic barrier layer, an organic barrier layer in contact with a top surface of the first inorganic barrier layer, the organic barrier layer including a plurality of solid portions distributed discretely, and a second inorganic barrier layer in contact with the top surface of the first inorganic barrier layer and top surfaces of the plurality of solid portions of the organic barrier layer. The organic barrier layer is black.

Disclosed is a substrate processing apparatus including: a processing chamber that accommodates a substrate; a light source that radiates energy rays for a processing to the substrate in the processing chamber; a rotation driving unit that rotates at least one of the substrate and the light source around an axis intersecting with the substrate in the processing chamber; an opening/closing mechanism that switches between an open state and a closed state; and a controller configured to control the opening/closing mechanism to switch between the open state and the closed state, to increase a light emission amount of the light source in synchronization with the switch of the open state to the closed state by the opening/closing mechanism, and to decrease the light emission amount of the light source in synchronization with the switch of the closed state to the open state by the opening/closing mechanism.

The present disclosure describes a method that includes forming a dielectric layer over a contact region on a substrate; etching the dielectric layer to form a contact opening to expose the contact region; and pre-cleaning the exposed contact region to remove a residual material formed by the etching. During the pre-cleaning, the first contact region is exposed to an inductively coupled radio frequency (RF) plasma. Also, during the pre-cleaning, a direct current power supply unit (DC PSU) provides a bias voltage to the substrate and a magnetic field is applied to the inductively coupled RF plasma to collimate ions.

An organic EL display device (100) including a plurality of pixels includes an element substrate (1) including a substrate, and a plurality of organic EL elements supported by the substrate and respectively located in the plurality of pixels; and a thin film encapsulation structure (10) covering the plurality of pixels. The thin film encapsulation structure includes a first inorganic barrier layer (12), an organic barrier layer (14) in contact with a top surface of the first inorganic barrier layer (12), the organic barrier layer (14) including a plurality of solid portions distributed discretely, and a second inorganic barrier layer (16) in contact with the top surface of the first inorganic barrier layer (12) and top surfaces of the plurality of solid portions of the organic barrier layer (14). The organic barrier layer (14) is black.

An organic EL display device (100) including a plurality of pixels includes an element substrate (1) including a substrate, and a plurality of organic EL elements supported by the substrate and respectively located in the plurality of pixels; and a thin film encapsulation structure (10) covering the plurality of pixels. The thin film encapsulation structure includes a first inorganic barrier layer (12), an organic barrier layer (14) in contact with a top surface of the first inorganic barrier layer (12), the organic barrier layer (14) including a plurality of solid portions distributed discretely, and a second inorganic barrier layer (16) in contact with the top surface of the first inorganic barrier layer (12) and top surfaces of the plurality of solid portions of the organic barrier layer (14). The organic barrier layer (14) is black.

A second protective film is formed by applying high-viscosity resin by an inkjet method, in two patterns that extend parallel to and along a boundary between a first protective film and a plating film, the boundary being sandwiched between the two patterns. A low-viscosity resin is applied between these first and second patterns of the second protective film by the inkjet method. The low-viscosity resin has a viscosity that is lower than that of the high-viscosity resin for forming the second protective film, and a fluidity that is higher than that of the high-viscosity resin and thus, leaks and spreads into a gap between the first protective film and the plating film. The third protective film adheres to the first and second patterns, is formed across the boundary between the first protective film and the plating film, and is embedded in the gap whereby the gap is plugged.

A method for manufacturing semiconductor structure is disclosed. The method includes: providing a semiconductor substrate; hydrogenizing a surface of the semiconductor substrate; supplying a precursor to the surface of the semiconductor substrate; and supplying a reactant to the surface of the semiconductor substrate. An associated method for performing an atomic layer deposition (ALD) upon a semiconductor substrate and an associated atomic layer deposition (ALD) method are also disclosed.

A fan-out semiconductor package includes: a first connection member having a through-hole; a semiconductor chip disposed in the through-hole of the first connection member and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first connection member and the inactive surface of the semiconductor chip; and a second connection member disposed on the first connection member and the active surface of the semiconductor chip and including a redistribution layer electrically connected to the connection pads. The first connection member includes a first electromagnetic interference (EMI) blocking part surrounding side surfaces of the semiconductor chip, the second connection member includes a second EMI blocking part surrounding the redistribution layer, and the first EMI blocking part and the second EMI blocking part are connected to each other.

A carrier structure and methods of forming and using the same are described. In some embodiments, the method includes forming one or more devices over a substrate, forming a first interconnect structure over the one or more devices, and bonding the first interconnect structure to a carrier structure. The carrier structure includes a semiconductor substrate, a release layer, and a first dielectric layer, and the release layer includes a metal nitride. The method further includes flipping over the one or more devices so the carrier structure is located at a bottom, performing backside processes, flipping over the one or more devices so the carrier structure is located at a top, and exposing the carrier structure to IR lights. Portions of the release layer are separated from the first dielectric layer.