Method of doping a semiconductor sample in a uniform and carbon-free way, wherein said sample has a surface, comprising the following steps: A. removing oxides from at least part of the said surface; B. dip coating said at least part of the surface of the sample in a dopant based carbon-free solution of at least one dopant based carbon free substance diluted in water, wherein said at least one dopant based carbon free substance has a molecule comprising at least one dopant atom, wherein the dip coating is achieved by heating said dopant based carbon-free solution at a dip coating temperature from 65% to 100% of the boiling temperature of said dopant based carbon-free solution, thereby a self-assembled mono-layer including dopant atoms is formed; C. annealing said sample, wherein the annealing is configured to cause said dopant atoms included in said self-assembled mono-layer to be diffused into the sample.

Semiconductor structures and method for forming the same are provided. The semiconductor structure includes a fin protruding from a substrate and a gate stack formed across the fin. The semiconductor structure further includes a first cap layer formed over the gate stack and a source/drain structure formed adjacent to the gate stack in the fin. The semiconductor structure further includes a contact structure formed over the source/drain structure and a second cap layer formed over the contact structure. In addition, the first cap layer and the second cap layer include different halogens.

Described herein is a method and a power semiconductor device produced by the method. The method includes: forming a structured metallization layer above a semiconductor substrate; forming a protective layer on the structured metallization layer; forming a first passivation over the structured metallization layer with the protective layer interposed between the first passivation and the structured metallization layer; structuring the first passivation to expose one or more regions of the protective layer; removing the one or more exposed regions of the protective layer to expose one or more parts of the structured metallization layer; and after structuring the first passivation and removing the one or more exposed regions of the protective layer, forming a second passivation on the first passivation and electroless plating the one or more exposed parts of the structured metallization layer.

Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

The present inventive concept relates to a method for removing impurities in thin film and a substrate processing apparatus. The method for removing impurities in a thin film includes the steps of: providing a substrate having a thin film formed thereon in a process chamber; supplying a first gas reacting and coupling with impurities contained in the thin film, into the process chamber; exhausting a coupled product of the impurities and the first gas by depressurizing an interior of the process chamber after stopping the supply of the first gas; curing the thin film by supplying a second gas being different from the first gas into the process chamber; and stopping the supply of the second gas and exhausting the remaining second gas from the interior of the process chamber.

Described herein are a method and a power semiconductor device produced by the method. The power semiconductor device includes: transistor device structures formed in a semiconductor substrate; a structured metallization layer above the semiconductor substrate; a first passivation over the structured metallization layer; a second passivation on the first passivation; an opening in the first passivation and the second passivation such that a first part of the structured metallization layer has a contact region uncovered by the first passivation and the second passivation and a peripheral region laterally surrounding the contact region and covered by the first passivation and the second passivation; a plating that covers the contact region but not the peripheral region of the first part of the structured metallization layer; and a protective layer separating the peripheral region of the first part of the structured metallization layer from the first passivation.

A method for processing a product layer includes providing a dielectric layer over a substrate, etching to remove a portion of the dielectric layer, forming a product layer over the etched dielectric layer, and removing the product layer by providing a dissolving solution and using the dissolving solution to rinse or soak the product layer to dissolve the product layer.

Provided are an adhesion removal method capable of removing sulfur-containing adhesions that adhere onto the inner surface of a chamber or the inner surface of a pipe connected to the chamber without disassembly of the chamber and a film-forming method. Sulfur-containing adhesions adhering onto at least one of the inner surface of a chamber (10) and the inner surface of a discharge pipe (15) connected to the chamber (10) are removed by reaction with a cleaning gas containing an oxygen-containing compound gas.

A pattern-forming method includes applying a first composition on a surface layer of a substrate to form a first coating film. The surface layer includes a first region which includes a metal atom, and a second region which includes a silicon atom. The first coating film is heated. A portion other than a portion formed on the first region or a portion other than a portion formed on the second region of the first coating film heated is removed, thereby forming a first lamination portion. A second composition is applied on the substrate on which the first lamination portion is formed to form a second coating film. The second coating film is heated or exposed. A portion other than a portion formed on the first lamination portion of the second coating film heated or exposed is removed, thereby forming a second lamination portion.

There is included (a) modifying a film formed on a substrate in a process chamber set at a first pressure by supplying a gas containing hydrogen and oxygen to the film; (b) purging an interior of the process chamber by supplying an inert gas into the process chamber and exhausting the interior of the process chamber, at a second pressure at which the gas containing hydrogen and oxygen remaining in the process chamber after performing (a) is maintained in a gaseous state; and (c) vacuuming the interior of the process chamber so as to reduce a pressure of the interior of the process chamber after performing (b) to a third pressure lower than the second pressure.