The present inventive concept is related to methods for passivating an oxide layer and methods of selectively depositing a metal, metal nitride, metal oxide, or metal silicide layer on a metal, metal oxide, or silicide layer over an oxide layer including exposing the oxide layer to a passivant that selectively binds to the oxide layer over the metal, metal oxide, or silicide layer, and selectively growing the metal, metal nitride, metal oxide or metal silicide layer on the metal, metal oxide or silicide layer.

A substrate processing apparatus includes a chamber body having an upper opening, a chamber lid part having a lower opening, and a shield plate arranged in a lid internal space of the chamber lid part. The radial dimension of the shield plate is greater than that of the lower opening. Covering the upper opening of the chamber body with the chamber lid part forms a chamber that internally houses a substrate. In the substrate processing apparatus, before the substrate is conveyed and the chamber is formed, the lid internal space of the chamber lid part is filled with the gas supplied from a gas supply part, in a state in which the shield plate overlaps with the lower opening. This allows the chamber to be quickly filled with the gas to achieve a desired low oxygen atmosphere after the formation of the chamber.

Embodiments described herein relate generally to methods for forming a conductive feature in a dielectric layer in semiconductor processing and structures formed thereby. In some embodiments, a structure includes a dielectric layer over a substrate, a surface modification layer, and a conductive feature. The dielectric layer has a sidewall. The surface modification layer is along the sidewall, and the surface modification layer includes phosphorous and carbon. The conductive feature is along the surface modification layer.

The present invention provides a thin-film transistor substrate including a base substrate and a thin-film transistor, the thin-film transistor including: a gate electrode; a gate insulating layer; a source electrode and a drain electrode; and an oxide semiconductor layer in this order. The source electrode and the drain electrode each include a first conductive layer and a second conductive layer covering the first conductive layer. The second conductive layer contains at least one element selected from the group consisting of molybdenum, tantalum, tungsten, and nickel. The gate insulating layer in a region between the source electrode and the drain electrode has a smaller thickness than in a region below the source electrode and in a region below the drain electrode.

Disclosures of the present invention mainly describe a two-dimensional semiconductor device (TDSD), comprising: a two-dimensional semiconductor material (TDSM) layer, a superacid action layer and a superacid solution. The TDSM layer is made of a transition-metal dichalcogenide, and the superacid action layer is formed on the TDSM layer. Particularly, an oxide material is adopted for making the superacid action layer, such that the superacid solution is subsequently applied to the superacid action layer so as to make the superacid solution gets into the superacid action layer by diffusion effect. Experimental data have proved that, letting the superacid solution diffuse into the superacid action layer can not only apply a chemical treatment to the TDSM layer, but also make the TDSD have a luminosity enhancement. Particularly, the luminosity enhancement would not be reduced even if the TDSD contacts with water and/or organic solution during other subsequent manufacturing processes.

A substrate processing apparatus includes a chamber body having an upper opening, a chamber lid part having a lower opening, and a shield plate arranged in a lid internal space of the chamber lid part. The radial dimension of the shield plate is greater than that of the lower opening. Covering the upper opening of the chamber body with the chamber lid part forms a chamber that internally houses a substrate. In the substrate processing apparatus, before the substrate is conveyed and the chamber is formed, the lid internal space of the chamber lid part is filled with the gas supplied from a gas supply part, in a state in which the shield plate overlaps with the lower opening. This allows the chamber to be quickly filled with the gas to achieve a desired low oxygen atmosphere after the formation of the chamber.

Methods and devices for forming a conductive line disposed over a substrate. A first dielectric layer is disposed over the substrate and coplanar with the conductive line. A second dielectric layer disposed over the conductive line and a third dielectric layer disposed over the first dielectric layer. A via extends through the second dielectric layer and is coupled to the conductive line. The second dielectric layer and the third dielectric layer are coplanar and the second and third dielectric layers have a different composition. In some embodiments, the second dielectric layer is selectively deposited on the conductive line.

A method for forming a semiconductor structure is provided. The method includes forming a gate structure over a fin structure, forming a source/drain structure in the fin structure and adjacent to the gate structure, forming a dielectric layer over the gate structure and the source/drain structure, and forming an opening in the dielectric layer to expose the source/drain structure. The method further includes depositing a barrier layer lining a sidewall surface of the opening and a top surface of the source/drain structure. The method further includes etching a portion of the barrier layer to expose the source/drain structure. The method further includes depositing a glue layer covering the sidewall surface of the opening and the source/drain structure in the opening. The method further includes forming a contact structure filling the opening in the dielectric layer. The contact structure is surrounded by the glue layer.

Embodiments described herein relate generally to methods for forming a conductive feature in a dielectric layer in semiconductor processing and structures formed thereby. In some embodiments, a structure includes a dielectric layer over a substrate, a surface modification layer, and a conductive feature. The dielectric layer has a sidewall. The surface modification layer is along the sidewall, and the surface modification layer includes phosphorous and carbon. The conductive feature is along the surface modification layer.

A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a surface of a substrate, a processing film forming step of solidifying or curing the processing liquid supplied to the surface of the substrate to form, on the surface of the substrate, a processing film that holds a removal object present on the surface of the substrate, a peeling step of supplying a peeling liquid forming liquid to the surface of the substrate to put the peeling liquid forming liquid in contact with the processing film and form a peeling liquid, and peeling the processing film, in the state of holding the removal object, from the surface of the substrate by the peeling liquid, and a removing step of continuing the supply of the peeling liquid forming liquid, after the peeling of the processing film, to wash away and remove the processing film from the surface of the substrate in the state where the removal object is held by the processing film.