An object of the present invention is to provide a Schottky barrier diode using gallium oxide capable of suppressing heat generation and enhancing heat radiation performance while ensuring mechanical strength and handling performance. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide having a recessed part 23 on the second surface 22, an epitaxial layer 30 made of gallium oxide and provided on a first surface 21 of the semiconductor substrate 20; an anode electrode 40 provided at a position overlapping the recessed part 23 as viewed in the lamination direction and brought into Schottky contact with the epitaxial layer 30, and a cathode electrode 50 provided in the recessed part 23 of the semiconductor substrate 20 and brought into ohmic contact with the semiconductor substrate 20. According to the present invention, since the thickness of the semiconductor substrate at a part thereof where forward current flows is selectively reduced, this makes it possible to suppress heat generation and to enhance heat radiation performance while ensuring mechanical strength and handling performance. Thus, even though gallium oxide having a low heat conductivity is used as the material of the semiconductor substrate, a temperature rise of the element can be suppressed.

Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer.

A method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid is provided to improve upon the complexity of the conventional method for manufacturing light-emitting diode die. The method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid includes performing a first epitaxial reaction and then a second epitaxial reaction on a substrate under 600-650 C. to form a gallium nitride pyramid, growing an first indium gallium nitride layer on an end face of the gallium nitride pyramid, where the end face is away from the substrate, and growing a first gallium nitride layer on the first indium gallium nitride layer. A flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, and a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1.

In a first aspect of a present inventive subject matter, a crystalline oxide semiconductor film includes a crystalline oxide semiconductor that contains a corundum structure as a major component, a dopant, and an electron mobility that is 30 cm.sup.2/Vs or more.

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

The present invention belongs to the field of semiconductor materials preparation technology, and relates to a preparation method of gallium oxide/copper gallium oxide heterojunction. In this method, the gallium oxide is pre-treated before the copper source is deposited on the pre-treated gallium oxide, or directly cover the copper source layer on the pretreated gallium oxide. Then, the gallium oxide with copper source is placed in a high temperature furnace in proper form and then heat treated for a certain time under certain conditions, so that the copper atomics can be controlled to diffuse into gallium oxide to form corresponding copper-gallium-oxygen alloys. Further the copper-gallium-oxygen alloys forms gallium oxide/copper gallium oxide heterojunction having good interfacial properties with gallium oxide which does not undergo copper diffusion. The advantage is that the high quality copper gallium oxide material can be prepared. The required equipment and process are simple and controllable.

High yield substrate assembly. In accordance with a first method embodiment, a plurality of piggyback substrates are attached to a carrier substrate. The edges of the plurality of the piggyback substrates are bonded to one another. The plurality of piggyback substrates are removed from the carrier substrate to form a substrate assembly. The substrate assembly is processed to produce a plurality of integrated circuit devices on the substrate assembly. The processing may use manufacturing equipment designed to process wafers larger than individual instances of the plurality of piggyback substrates.

A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to epitaxially grow a film on the surface of the substrate. The film formation apparatus may be provided with: a furnace configured to house and heat the substrate; a reservoir configured to store the solution; a heater configured to heat the solution in the reservoir; an ultrasonic transducer configured to apply ultrasound to the solution in the reservoir so as to generate the mist of the solution in the reservoir; and a mist supply path configured to carry the mist from the reservoir to the furnace.

A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.

A substrate manufacturing method includes: a first step of disposing a condenser for condensing a laser beam in a non-contact manner on a surface 20r of a magnesium oxide single crystal substrate 20 to be irradiated; and a second step of irradiating a laser beam to a surface of the magnesium oxide single crystal substrate 20 and condensing the laser beam into an inner portion of the single crystal member under designated irradiation conditions using the condenser, and at a same time, two-dimensionally moving the condenser and the magnesium oxide single crystal substrate 20 relatively to each other, and sequentially forming processing marks to sequentially allow planar peeling.