Aspects of diamond growth on semiconductors are described. Some aspects include direct growth of synthetic diamond on wide-bandgap semiconductors without the use of nucleating layers or protective layers. Some aspects include generating synthetic diamond over a gallium nitride surface of a layered structure in accordance with a set of growth parameters that are generated based at least in part on an interface property of an interface generated between the gallium nitride surface and the synthetic diamond. In some aspects, the interface is a single interface between the synthetic diamond and the gallium nitride surface. In some aspects, the synthetic diamond is in contact with the gallium nitride surface. Some aspects include synthetic diamond growth on wide-bandgap semiconductor structures to achieve thermal extraction without introducing electrically conductive regions in the semiconductor structure. Such aspects may include generating less than optimal quality synthetic diamond.

There is provided a crystalline film including, a crystalline metal oxide as a major component; a corundum structure; a dislocation density of 1×10.sup.7 cm.sup.−2 or less; and a surface area of 10 mm.sup.2 or more. There is provided a method of producing a crystalline film comprising, forming a first lateral crystal growth layer on a substrate by first lateral crystal growth; placing a mask on the first lateral crystal growth layer; and forming a second lateral crystal growth layer by second lateral crystal growth.

A wafer processing apparatus is configured to process a wafer by supplying mist to a surface of the wafer. The wafer processing apparatus includes a furnace in which the wafer is disposed, a gas supplying device configured to supply gas into the furnace, a mist supplying device configured to supply the mist into the furnace, and a controller. The controller is configured to execute a processing step by controlling the gas supplying device and the mist supplying device to supply the gas and the mist into the furnace, respectively. The controller is further configured to control the mist supplying device to stop supplying the mist into the furnace while controlling the gas supplying device to keep supplying the gas into the furnace when the processing step ends.

A diode includes an n-type semiconductor layer including an n-type Ga.sub.2O.sub.3-based single crystal, and a p-type semiconductor layer including a p-type semiconductor in which a volume of an amorphous portion is higher than a volume of a crystalline portion. The n-type semiconductor layer and the p-type semiconductor layer form a pn junction.

An intermediate structure for forming a semiconductor device and method of making is provided. The intermediate device includes (i) a substrate comprising a Ga-based layer, and (ii) optionally, a metal layer on the substrate; wherein at least one of the Ga-based layer and, if present, the metal layer comprises at least a surface region having an isoelectric point of less than 7, usually at most 6.

An optoelectronic semiconductor light emitting device configured to emit light having a wavelength in the range from about 150 nm to about 425 nm is disclosed. In embodiments, the device comprises a substrate having at least one epitaxial semiconductor layer disposed thereon, wherein each of the one or more epitaxial semiconductor layers comprises a metal oxide. Also disclosed is an optoelectronic semiconductor device for generating light of a predetermined wavelength comprising a substrate and an optical emission region. The optical emission region has an optical emission region band structure configured for generating light of the predetermined wavelength and comprises one or more epitaxial metal oxide layers supported by the substrate.

A method for forming a semi-conductive or conductive oxide film is provided. The oxide film is doped with a bismuth and made of an indium oxide, an aluminum oxide, a gallium oxide, an oxide including the gallium oxide, or an oxide of a combination thereof. The method includes supplying a mist of a solution to a surface of the substrate while heating the substrate. An oxide film material and a bismuth compound being dissolved in the solution. The bismuth compound is selected from the group consisting of bismuth ethoxide, bismuth acetate oxide, bismuth acetate, bismuth nitrate pentahydrate, bismuth nitrate, bismuth oxynitrate, bismuth 2-ethylhexanoate, bismuth octanoate, bismuth naphthenate, bismuth subgallate, bismuth subsalicylate, bismuth chloride, bismuth oxychloride, bismuth citrate, bismuth oxyacetate, bismuth oxide perchlorate, bismuth oxysalicylate, bismuth bromide, bismuth iodide, bismuth hydroxide, bismuth oxycarbonate, bismuth sulfide, bismuth sulfate, bismuth carbonate, and bismuth oxide.

A Schottky barrier diode, including a first n-type semiconductor layer including a β-Ga.sub.2O.sub.3-based single crystal epitaxial layer and having a first carrier concentration that determines reverse breakdown voltage and forward voltage, a second n-type semiconductor layer including a β-Ga.sub.2O.sub.3-based single crystal substrate and having a second carrier concentration that is higher than the first carrier concentration and determines forward voltage, a Schottky electrode provided on a surface of the first n-type semiconductor layer on the opposite side to the second n-type semiconductor layer, and an ohmic electrode provided on a surface of the second n-type semiconductor layer on the opposite side to the first n-type semiconductor layer. The β-Ga.sub.2O.sub.3-based single crystal substrate includes a surface that has a plane orientation rotated by an angle of not more than 37.5° from a (010) plane.

Provided are a multilayer structure in which crystal defects due to stress concentration in a semiconductor layer caused by an insulator film are prevented and a semiconductor device using the multilayer structure, the multilayer structure and the semiconductor device that are particularly useful for power devices. A multilayer structure in which an insulator film is arranged on a part of a semiconductor film, wherein the semiconductor film has a corundum structure and contains a crystalline oxide semiconductor containing one or two or more metals selected from groups 9 and 13 of the periodic table, and wherein the insulator film has a taper angle of 20° or less.

Provided is a crystalline oxide film including: a plane tilted from a c-plane as a principal plane; gallium; and a metal in Group 9 of the periodic table, the metal in Group 9 of the periodic table among all metallic elements in the film having an atomic ratio of equal to or less than 23%.