A method of growing semiconductor layers may include: growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed, wherein the first semiconductor layer is different from the crystal layer in at least one of a material and a crystal structure; cutting the first semiconductor layer such that a cut surface of the first semiconductor layer extends from a front surface of the first semiconductor layer to a rear surface of the first semiconductor layer; and growing a second semiconductor layer on the cut surface of the first semiconductor layer, wherein the second semiconductor layer has a material and a crystal structure that are same as those of the first semiconductor layer.

The disclosure is applicable for the technical field of semiconductor devices manufacturing, and provides a gallium oxide SBD terminal structure. The gallium oxide SBD terminal structure comprises a cathode metal layer, an N.sup.+ high-concentration substrate layer, an N.sup.− low-concentration Ga.sub.2O.sub.3 epitaxial layer and an anode metal layer from bottom to top, wherein the N.sup.− low-concentration Ga.sub.2O.sub.3 epitaxial layer is within a range of certain thickness close to the anode metal layer; and a doping concentration below the anode metal layer is greater than a doping concentration on two sides of the anode metal layer. Namely, only a doping concentration of the part outside the corresponding area of the anode metal layer is changed, so that the breakdown voltage of the gallium oxide SBD terminal structure is improved under the condition of guaranteeing low on resistance.

Provided is a laminated structure that has a crystalline film having a large area, which is useful for a semiconductor device, etc., and having a good film thickness distribution in which the film thickness is 30 μm or less, and that has excellent heat dissipation. In a laminated structure in which a crystal film containing a crystalline metal oxide as a main component is laminated on a support directly or with another layer therebetween, the support has a thermal conductivity of 100 W/m.Math.K or more at room temperature, and the crystal film has a corundum structure. Furthermore, the film thickness of the crystal film is 1 μm to 30 μm, the area of the crystal film is 15 cm.sup.2 or more, the distribution of the film thickness in the area is in the range of ±10% or less.

There is provided a method of forming a bismuth-containing gallium oxide-based semiconductor film on a base material by a pulse laser deposition method using a target containing gallium oxide and bismuth oxide. In the method, the temperature of the base material is set to 650° C. to 1,000° C., and the laser intensity is set to 1.0 J/cm.sup.2 to 10.0 J/cm.sup.2. The bismuth-containing gallium oxide-based semiconductor film of the present disclosure has a proportion of the number of atoms of bismuth of 0.50 at % to 10.00 at % with respect to the total of the numbers of atoms of bismuth and gallium and has a β-gallia structure. The bismuth-containing gallium oxide-based semiconductor component of the present disclosure has a base material and the bismuth-containing gallium oxide-based semiconductor film that is laminated on the base material.

Provided is an α-Ga.sub.2O.sub.3 based semiconductor film having a crystal having a corundum-type crystal structure composed of α-Ga.sub.2O.sub.3 or an α-Ga.sub.2O.sub.3 solid solution as a main phase. This semiconductor film has a size in which the diameter of the largest circle inscribed in the outer circumference thereof is 5.08 cm (2 inches) or more, and at the center point X and each of four outer circumferential points A, B, C, and D of the largest circle on the surface of the semiconductor film, the full width at half maximum of the peak in the vicinity of 216 cm.sup.−1 in Raman spectrum of the semiconductor film, as measured by laser Raman spectroscopy, is 6.0 cm.sup.−1 or less.

An optoelectronic semiconductor light emitting device configured to emit light having a wavelength in the range from about 150 nm to about 425 nm is disclosed. In embodiments, the device comprises a substrate having at least one epitaxial semiconductor layer disposed thereon, wherein each of the one or more epitaxial semiconductor layers comprises a metal oxide. An epitaxial semiconductor layer of the device can include a first single crystal oxide material. The first single crystal oxide material can include: at least one of magnesium, nickel, and zinc; at least one of aluminum and gallium; and oxygen. The first single crystal oxide material can also include a cubic crystal symmetry.

An optoelectronic semiconductor light emitting device configured to emit light having a wavelength in the range from about 150 nm to about 425 nm is disclosed. In embodiments, the device comprises a substrate having at least one epitaxial semiconductor layer disposed thereon, wherein each of the one or more epitaxial semiconductor layers comprises a metal oxide. At least one of the epitaxial semiconductor layers can include single crystal A.sub.xB.sub.1-xO.sub.n, where: 0<x<1.0; A is Al and/or Ga; and B is Mg, Ni, a rare earth, Er, Gd, Ir, Bi, or Li.

A method and a system for film deposition, the system comprising a substrate and a negatively biased target, the target being mounted on a magnetron sputtering cathode and located at a distance from the substrate, wherein a laser beam from a pulsed laser is focused on the target, thereby triggering a magnetron plasma or ejecting vaporized and ionized material from the target in an existing magnetron plasma, the magnetron plasma sputtering material from the target depositing on the substrate.

A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.

A semiconductor device includes: a p-type region including a super-lattice pseudo mixed crystal region in which a first layer and a second layer are alternately stacked. The first layer includes a gallium oxide based semiconductor. The second layer includes a p type semiconductor made of a material different from the first layer.