A method of manufacturing a low temperature polysilicon thin film, including the steps of: forming a buffer layer on a substrate; forming a silicon layer on the buffer layer; roughening a surface of the silicon layer to form an uneven surface as a recrystallization growth space; and annealing the silicon layer to form a polysilicon layer, and a partial silicon material of the polysilicon layer is formed on the recrystallization growth space.

A crystalline oxide thin film contains an In element, a Ga element and an Ln element, in which the In element is a main component, the Ln element is at least one element selected from the group consisting of La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and an average crystal grain size D.sub.1 is in a range from 0.05 μm to 0.5 μm.

A method of manufacturing a polycrystalline silicon layer, includes forming an amorphous silicon layer on a substrate; doping the amorphous silicon layer with at least one impurity; cleaning the amorphous silicon layer with hydrofluoric acid; rinsing the amorphous silicon layer with hydrogen-added deionized water; and forming a polycrystalline silicon layer by irradiating a laser beam onto the amorphous silicon layer.

There are provided a laser irradiation apparatus, a laser irradiation method, and a semiconductor device manufacturing method that reduce irradiation unevenness of a laser beam.

A laser irradiation apparatus includes a waveform shaping device (20). The waveform shaping device (20) includes a laser beam source (11), a first waveform shaping unit (30) that shapes the pulse waveform of a pulse laser beam by applying a delay according to an optical path length difference between two light beams (L11 and L12) branched by a first beam splitter (31), a wave plate that changes the polarization state of the pulse laser beam from the first waveform shaping unit (30), and a second waveform shaping unit (40) that shapes the pulse waveform of the pulse laser beam by applying a delay according to an optical path length difference between two light beams (L15 and L16) branched by a second beam splitter (41).

The present disclosure is directed to a method for forming metal insulator metal decoupling capacitors with scalable capacitance. The method can include forming a first redistribution layer with metal lines on a portion of a polymer layer, depositing a photoresist layer on the first redistribution layer, and etching the photoresist layer to form spaced apart first and second TIV openings in the photoresist layer, where the first TIV opening is wider than the second TIV opening. The method can further include depositing a metal in the first and second TIV openings to form respective first and second TIV structures in contact with the metal line, removing the photoresist layer, forming a high-k dielectric on a top surface of the first and second TIV structures, and depositing a metal layer on the high-k dielectric layer to form respective first and second capacitors.

A method of making a silicon on insulator structure comprises: providing a bonded structure, the bonded structure comprises the first substrate, the second substrate and the insulating buried layer, the insulating buried layer is positioned between the first substrate and the second substrate; peeling off a layer of removing region of the first substrate from the bonded structure to obtain a first film; at a first temperature, performing a first etching to etch the first film to remove a first thickness of the first film; at a second temperature, performing a second etching to etch the first film to planarize the first film and remove a second thickness of the first film, the first temperature being lower than the second temperature, the first thickness being greater than the second thickness, and a sum of the first thickness and the second thickness being a total etching thickness of the first film.

A method of manufacturing a low temperature polysilicon thin film, including: forming a buffer layer on a substrate; forming a silicon layer on the buffer layer; providing a mask; patterning the silicon layer through the mask, wherein the patterned silicon layer includes a plurality of recrystallization growth spaces; and annealing the silicon layer to form a polysilicon layer, and a partial silicon material of the polysilicon layer is formed on the recrystallization growth space.

The present disclosure relates to a method for growing III-V compound semiconductors on silicon-on-insulators. Starting from {111}-oriented Si seed surfaces between a buried oxide layer and a patterned mask layer, the III-V compound semiconductor is grown within lateral trenches by metal organic chemical vapor deposition such that the non-defective portion of the III-V compound semiconductor formed on the buried oxide layer is substantially free of crystalline defects and has high crystalline quality.

A laser processing apparatus includes: a stage 2 capable of levitating and transporting a substrate 3 by jetting gas from a front surface; a laser oscillator configured to irradiate a laser beam 20a onto the substrate 3; and a gas jetting port arranged at a position overlapping a focus point position of the laser beam 20a in plan view, and being configured to jet inert gas. The front surface of the stage 2 is constituted by upper structures 5a and 5b, and the upper structures 5a and 5b are arranged so as to be spaced apart from each other and face each other. A gap between the upper structures 5a and 5b overlaps the focus point position of the laser beam 20a in plan view. A filling member 8 is arranged between the upper structures 5a and 5b so as to fill the gap between the upper structures 5a and 5b.

Disclosed are a method of manufacturing a thin film transistor, a thin film transistor, a display panel, and a display device. The method includes forming a gate electrode, forming an oxide semiconductor layer at least partially overlapping the gate electrode, and forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, wherein the forming of the oxide semiconductor layer includes forming a first oxide semiconductor layer, and forming a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a higher energy bandgap than the first oxide semiconductor layer, wherein the forming of the second oxide semiconductor layer is performed by a different process from the forming of the first oxide semiconductor layer, and the forming of the second oxide semiconductor layer includes spraying a precursor solution for the second oxide semiconductor on the first oxide semiconductor layer followed by heat treatment.