A single crystal semiconductor structure includes: an amorphous substrate; a single crystal semiconductor layer provided on the amorphous substrate; and a thin orienting film provided between the amorphous substrate and the single crystal semiconductor layer, wherein the thin orienting film is a single crystal thin film, and the thin orienting film has a non-zero thickness that is equal to or less than 10 times a critical thickness h.sub.c.

To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

A method of making nanoparticles including a semiconducting nitride is provided. The method includes reacting precursors in a gas phase to form the nanoparticles including the semiconducting nitride. The precursors include at least one of a gallium (Ga) precursor or an indium (In) precursor and a nitrogen (N) precursor. The semiconducting nitride is In.sub.1−xGa.sub.xN, where 0≤x≤1. Structures that include the nanoparticles and systems for making the nanoparticles are also provided.

A layer on a substrate is laser annealed by pulses in a plurality of laser beams formed into a uniform line beam. The laser beams are partitioned into a first set of beams and a second set of beams. The second set of beams is incident onto the layer from a smaller range of angles than all of the beams combined. Pulses in the beams are synchronized such that pulses in the first set of beams are incident on the layer before pulses in the second set of beams. Pulses in the first set of beams melt the layer and pulses in the second set of beams sustain melting.

A method of fan-out processing includes providing or obtaining a fused glass laminate sheet or wafer having a core layer and a first clad layer and a second clad layer, the core layer comprising a core glass having a core glass coefficient of thermal expansion α.sub.core, the first clad layer and the second clad layer each comprising a clad glass having a clad glass coefficient of thermal expansion α.sub.clad, where α.sub.clad>α.sub.core; affixing integrated circuit devices to the second clad layer of the laminate sheet or wafer; forming a fan-out layer on or above the integrated circuit devices; and removing some of the first clad layer to decrease warp of the sheet or wafer with integrated circuit devices and a fan-out layer thereon. A method of producing a laminate sheet or wafer having a selected CTE is also disclosed.

A manufacturing method of an indium tin oxide (ITO) thin film based on a solution method is disclosed. The manufacturing method includes: a step of providing an array substrate; a step of obtaining a dispersion solution by mixing ITO grains, an organic small molecule phase transfer agent, and an N-chlorosuccinimide (NCs) solution; a step of obtaining uniformly assembled ITO grains by coating the dispersion solution onto a passivation layer and baking to remove the organic small molecule phase transfer agent; and a step of obtaining the ITO thin film by annealing at an inert atmosphere to refine the ITO grains.

Disclosed in the present invention is a rare-earth doped semiconductor material. Compounds of two rare-earth elements R and R′ having different functions are introduced into an indium oxide containing material. The coupling of R element ions to an O2p orbit can effectively enhance the transfer efficiency of the rare-earth R′ as a photogenerated electron transfer center, such that the light stability of a device with a small amount of R′ doping can be achieved. Compared with single rare-earth element R′ doping, due to less doping, the impact on a mobility is less, such that higher mobility and light stability devices can be obtained. Further provided in the present invention is a semiconductor-based thin-film transistor, and an application.

A method of forming a semiconductor device may include depositing a NiAl layer on a substrate, oxidizing the NiAl layer to form a bilayer including a NiO semiconducting material layer and an AlO.sub.x layer on the NiO semiconducting material layer, forming a semiconductor layer including the NiO semiconducting material layer, the semiconductor layer also including a channel region, and forming a gate dielectric on the channel region of the semiconductor layer.

A multilayer diamond system includes an optically transparent substrate and an optically transparent intermediate layer deposited on the optically transparent substrate. A diamond layer is deposited on the optically transparent intermediate layer and formed from diamond having at least 50% of diamond grains sized between 2 nm and 500 nanometers.

Apparatus, systems, and methods for tuning the structure, conductivity, and/or wettability of laser induced graphene for a variety of functions including but not limited to multiplexed open microfluidic environmental biosensing and energy storage devices. Aspects of this invention introduce a one-step, mask-free process to create, pattern, and tune laser-induced graphene (LIG) with a ubiquitous CO2 laser or other laser. The laser parameters are adjusted to create LIG with different electrical conductivity, surface morphology, and surface wettability without the need for post chemical modification. This can be done with a single lasing. By optionally introducing a second (or third, fourth, or more) lasing(s), the LIG characteristics can be changed in just the same one step of using the laser scribing without other machines or sub-systems. One example is a second lasing with the same laser sub-system at low laser power, wherein the wettability of the LIG can be significantly altered. Such films presented unique superhydrophobicity owing to the combination of the micro/nanotextured structure and the removal of the hydrophilic oxygen-containing functional groups. The ability to tune the wettability of LIG while retaining high electrical conductivity and mechanical robustness allows rational design of LIG based on application.