A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.

Provided are a conductive structure and a method of controlling a work function of metal. The conductive structure includes a conductive material layer including metal and a work function control layer for controlling a work function of the conductive structure by being bonded to the conductive material layer. The work function control layer includes a two-dimensional material with a defect.

Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

The present invention provides a manufacturing method of an array substrate, including steps of: providing a flexible substrate layer, forming a buffer layer, forming an active layer, forming a gate insulating layer, forming a gate layer, forming an interlayer insulating layer, forming a source and drain layer, forming an organic planarization layer, forming an anode layer. An array substrate manufactured by the above manufacturing method, and the array substrate includes laminated a flexible substrate layer, a buffer layer, an active layer, a gate insulating layer, a gate layer, an interlayer insulating layer, a source and drain layer, an organic planarization layer, and an anode layer, which are disposed in a stack.

Provided are a graphene preparation apparatus, including: a chamber having a space for preparation of graphene; a first electrode and a second electrode disposed in the chamber to be separated a predetermined distance from each other, the first electrode and the second electrode supporting a catalytic metal and receiving electric current for preparation of the graphene to heat the catalytic metal using Joule heating; additional heaters disposed at opposite sides of the catalytic metal, respectively, and heating the catalytic metal to compensate for a temperature difference between both end regions and a central region of the catalytic metal heated using Joule heating induced by the first electrode and the second electrode; and a current supply unit supplying electric current to the first electrode and the second electrode.

A method of performing regional heating of a substrate by electromagnetic induction heating. The method may include applying a semiconductor film to the substrate and controllably energizing a coil positioned near the substrate. The energized coil(s) thereby generates a magnetic flux, which induces a current in the substrate and/or the semiconductor film, thereby heating the substrate and/or semiconductor film. The method may also include relative motion between the coil and the substrate to provide translation heating of the semiconductor film. Additionally, a crystal seeding mechanism may be employed to further control the crystallization process.

A method of forming graphene on a flexible substrate includes providing a polymer substrate including a metal structure and providing a carbon source and a carrier gas. The method also includes subjecting the polymer substrate to a plasma enhanced chemical vapor deposition (PECVD) process and growing a graphene layer on the copper structure.

The present invention relates to a method for manufacturing a diamond substrate, and more particularly, to a method of growing diamond after forming a structure of an air gap having a crystal correlation with a lower substrate by heat treatment of a photoresist pattern and an air gap forming film material on a substrate such as sapphire (Al.sub.2O.sub.3). Through such a method, a process is simplified and the cost is lowered when large-area/large-diameter single crystal diamond is heterogeneously grown, stress due to differences in a lattice constant and a coefficient of thermal expansion between the heterogeneous substrate and diamond is relieved, and an occurrence of defects or cracks is reduced even when a temperature drops, such that a high-quality single crystal diamond substrate may be manufactured and the diamond substrate may be easily self-separated from the heterogeneous substrate.

The present invention provides a manufacturing method of an array substrate, including steps of: providing a flexible substrate layer, forming a buffer layer, forming an active layer, forming a gate insulating layer, forming a gate layer, forming an interlayer insulating layer, forming a source and drain layer, forming an organic planarization layer, forming an anode layer. An array substrate manufactured by the above manufacturing method, and the array substrate includes laminated a flexible substrate layer, a buffer layer, an active layer, a gate insulating layer, a gate layer, an interlayer insulating layer, a source and drain layer, an organic planarization layer, and an anode layer, which are disposed in a stack.

A 3-dimensional crystalline carbon material that is magnetic and metallic under ambient conditions is provided. The material, denominated U-carbon, has been synthesized using the molecular precursor, 3, 3-dimethyl-1-butene (C.sub.6H.sub.12). Depending on the atomic connections made between the carbon atoms of the material, U-Carbon forms structures that exhibit semiconducting and nonmagnetic to metallic and ferromagnetic behaviors. The use of selected molecular precursors (such as 3, 3-dimethyl-1-butene C.sub.6H.sub.12) that support crystal growth based on clustered rather than individual atoms is a paradigm shift in materials development. Rationally designed metastable materials with desirable properties, including U-Carbon, can have many scientific and technological applications.