A method of manufacturing a semiconductor device, comprising the steps of: forming a gate dielectric layer and a first amorphous channel layer on a substrate; thinning the first amorphous channel layer; etching the first amorphous channel layer and the gate dielectric layer until the substrate is exposed; forming a second amorphous channel layer on the first amorphous channel layer and the substrate; annealing such that the first amorphous channel layer and the second amorphous channel layer are converted into a polycrystalline channel layer; and thinning the polycrystalline channel layer. According to the method of manufacturing semiconductor device of the present invention, the grain size of the polycrystalline thin film is increased by depositing a thick amorphous film and then annealing and thinning it. An additional protective layer is used to avoid etching damage on the sidewalls, effectively reducing the interface state and damage defects of the polycrystalline channel layer, thereby enhancing the reliability of the device.

Disclosed are methods for the surface cleaning and passivation of PV absorbers, such as CdTe substrates usable in solar cells, and devices made by such methods. In some embodiments, the method involves an anode layer ion source (ALIS) plasma discharge process to clean and oxidize a CdTe surface to produce a thin oxide layer between the CdTe layer and subsequent back contact layer(s).

A composition of matter comprising a film on a graphitic substrate, said film having been grown epitaxially on said substrate, wherein said film comprises at least one group III-V compound or at least one group II-VI compound.

An electronic device includes a substrate and at least two electrodes spaced by a nanogap, wherein the at least two electrodes are bridged by at least one nanoparticle and wherein the at least one nanoparticle has an overlap area with the at least two electrodes higher than 2% of the area of the at least one nanoparticle. A method of manufacturing of the electronic device and the use of the electronic device in photodetector, transistor, phototransistor, optical modulator, electrical diode, photovoltaic cell or electroluminescent component are also described.

A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

Disclosed are methods for the surface cleaning and passivation of PV absorbers, such as CdTe substrates usable in solar cells, and devices made by such methods. In some embodiments, the method involves an anode layer ion source (ALIS) plasma discharge process to clean and oxidize a CdTe surface to produce a thin oxide layer between the CdTe layer and subsequent back contact layer(s).

A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

In an example, the present invention provides a light-emitting device configured to emit electromagnetic radiation in a range of 210 to 360 nanometers. The device has a substrate member comprising a surface region. The device has a thickness of AlGaN material formed overlying the surface region and an aluminum concentration characterizing the AlGaN material having a range of 0 to 100%. The device has a boron doping concentration characterizing the AlGaN material having a range between 1e15 to 1e20 atoms/centimeter3.

Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, SbTe, GeSb and GeSbTe thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR.sup.1R.sup.2R.sup.3).sub.3 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

Porous and/or curved nanofiber bearing substrate materials are provided having enhanced surface area for a variety of applications including as electrical substrates, semipermeable membranes and barriers, structural lattices for tissue culturing and for composite materials, production of long unbranched nanofibers, and the like. A method of producing nanofibers is disclosed including providing a plurality of microparticles or nanoparticles such as carbon black particles having a catalyst material deposited thereon, and synthesizing a plurality of nanofibers from the catalyst material on the microparticles or nanoparticles. Compositions including carbon black particles having nanowires deposited thereon are further disclosed.