A composition of matter comprising at least one nanowire on a graphitic substrate, said at least one nanowire having been grown epitaxially on said substrate, wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or comprises at least one non carbon group (IV) element.

The present invention proposes variations of the laser separation method allowing separating homoepitaxial films from the substrates made from the same crystalline material as the epitaxial film. This new method of laser separation is based on using the selective doping of the substrate and epitaxial film with fine donor and acceptor impurities. In selective doping, concentration of free carries in the epitaxial film and substrate may essentially differ and this can lead to strong difference between the light absorption factors in the infrared region near the residual beams region where free carriers and phonon-plasmon interaction of the optical phonons with free carriers make an essential contribution to infrared absorption of the optical phonons. With the appropriate selection of the doping levels and frequency of infrared laser radiation, it is possible to achieve that laser radiation is absorbed in general in the region of strong doping near the interface substrate-homoepitaxial film. When scanning the interface substrate-homoepitaxial film with the focused laser beam of sufficient power, thermal decomposition of the semiconductor crystal takes place with subsequent separation of the homoepitaxial film. The advantage of the proposed variations of the method for laser separation of epitaxial films in comparison with the known ones is in that it allows the separation of homoepitaxial films from the substrates, i.e., homoepitaxial films having the same width of the forbidden gap as the initial semiconductor substrate has. The proposed variations of the method can be used for separation of the epitaxial films.

Printable inks based on a 2D semiconductor, such as MoS.sub.2, and its applications in fully inkjet-printed optoelectronic devices are disclosed. Specifically, percolating films of MoS.sub.2 nanosheets with superlative electrical conductivity (10.sup.2 s m.sup.1) are achieved by tailoring the ink formulation and curing conditions. Based on an ethyl cellulose dispersant, the MoS.sub.2 nanosheet ink also offers exceptional viscosity tunability, colloidal stability, and printability on both rigid and flexible substrates. Two distinct classes of photodetectors are fabricated based on the substrate and post-print curing method. While thermal annealing of printed devices on rigid glass substrates leads to a fast photoresponse of 150 s, photonically annealed devices on flexible polyimide substrates possess high photoresponsivity exceeding 50 mA/W. The photonically annealed photodetector also significantly reduces the curing time down to the millisecond-scale and maintains functionality over 500 bending cycles, thus providing a direct pathway to roll-to-roll manufacturing of next-generation flexible optoelectronics.

Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, SbTe, GeSb and GeSbTe thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR.sup.1R.sup.2R.sup.3).sub.3 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

Embodiments of the present disclosure are directed towards an integrated circuit (IC) die. In embodiments, an IC die may include a semiconductor substrate, a group III-Nitride or II-VI wurtzite layer disposed over the semiconductor substrate, and a plurality of buffer structures at least partially embedded in the group III-Nitride or II-VI wurtzite layer. In some embodiments, each of the plurality of buffer structures may include a central member disposed over the semiconductor substrate, a lower lateral member disposed over the semiconductor substrate and extending laterally away from the central member, and an upper lateral member disposed over the central member and extending laterally from the central member in an opposite direction from the lower lateral member. The plurality of buffer structures may be positioned in a staggered arrangement to terminate defects of the group III-Nitride or II-VI wurtzite layer. Other embodiments may be described and/or claimed.

A method for manufacturing a semiconductor device comprises depositing alternating layers of a plurality of first dielectric layers and a plurality of second dielectric layers on a substrate in a stacked configuration, forming one or more first openings in the stacked configuration to a depth penetrating below an upper surface of a bottom second dielectric layer of the plurality of second dielectric layers, forming one or more second openings in the stacked configuration to a depth corresponding to an upper surface of the substrate or below an upper surface of the substrate, removing the plurality of second dielectric layers from the stacked configuration to form a plurality of gaps, and epitaxially growing a semiconductor material from a seed layer in the one or more second openings to fill the one or more first and second openings and the plurality of gaps, wherein defects caused by a lattice mismatch between the epitaxially grown semiconductor material and a material of the substrate are contained at a bottom portion of the one or more second openings.

A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H.sub.2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H.sub.2S (hydrogen sulfide), NH.sub.3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

In an example, the present invention provides a light-emitting device configured to emit electromagnetic radiation in a range of 210 to 360 nanometers. The device has a substrate member comprising a surface region. The device has a thickness of AlGaN material formed overlying the surface region and an aluminum concentration characterizing the AlGaN material having a range of 0 to 100%. The device has a boron doping concentration characterizing the AlGaN material having a range between 1e15 to 1e20 atoms/centimeter3.

Printable inks based on a 2D semiconductor, such as MoS.sub.2, and its applications in fully inkjet-printed optoelectronic devices are disclosed. Specifically, percolating films of MoS.sub.2 nanosheets with superlative electrical conductivity (10.sup.2 s m.sup.1) are achieved by tailoring the ink formulation and curing conditions. Based on an ethyl cellulose dispersant, the MoS.sub.2 nanosheet ink also offers exceptional viscosity tunability, colloidal stability, and printability on both rigid and flexible substrates. Two distinct classes of photodetectors are fabricated based on the substrate and post-print curing method. While thermal annealing of printed devices on rigid glass substrates leads to a fast photoresponse of 150 s, photonically annealed devices on flexible polyimide substrates possess high photoresponsivity exceeding 50 mA/W. The photonically annealed photodetector also significantly reduces the curing time down to the millisecond-scale and maintains functionality over 500 bending cycles, thus providing a direct pathway to roll-to-roll manufacturing of next-generation flexible optoelectronics.