In each n-type epitaxial layer, p-type impurity regions are respectively formed by performing for each stacking of an n-type epitaxial layer, ion implantation using a resist mask. In a first n-type epitaxial layer, a p-type impurity region is formed at an inner wall of an impurity diffusion trench formed by dry etching. In a second and third n-type epitaxial layer, p-type impurity regions are formed respectively at an inner wall of impurity diffusion trenches that are recesses respectively corresponding to the impurity diffusion trenches of the first and the second n-type epitaxial layers respectively therebelow. The resist mask has an opening width that is wider than widths of open ends of the impurity diffusion trenches. The p-type impurity regions are connected by thermal diffusion processing, thereby forming a parallel pn layer constituted by p-type regions having a high aspect ratio and n-type regions respectively between the p-type regions.

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.

A method is provided. The method includes preparing a surface to receive a 3D printed layer, 3D printing a conductive layer comprising a plurality of overlaid layers of conductive material to the surface, and 3D printing conductive diamonds to the conductive layer. Preparing the surface includes one or more of texturing the surface and chemically treating the surface. The texturing is performed in order to not adversely impact regularity of the surface and limit variations in the height from the surface of conductive diamonds. Chemically treating the surface reduces films or coatings that may impact adhesion between the surface and the conductive layer, without degrading the conductive layer.

Provided is a method for manufacturing a semiconductor device whose electric characteristics are prevented from being varied and whose reliability is improved. In the method, an insulating film is formed over an oxide semiconductor film, a buffer film is formed over the insulating film, oxygen is added to the buffer film and the insulating film, a conductive film is formed over the buffer film to which oxygen is added, and an impurity element is added to the oxide semiconductor film using the conductive film as a mask. An insulating film containing hydrogen and overlapping with the oxide semiconductor film may be formed after the impurity element is added to the oxide semiconductor film.

A trench capacitor includes at least one epitaxial semiconductor surface layer on a semiconductor substrate having a doping level that is less than a doping level of the semiconductor substrate. A plurality of trenches are formed through at least one half of a thickness of the epitaxial semiconductor surface layer. The epitaxial semiconductor surface layer is thicker than a depth of the plurality of trenches. At least one capacitor dielectric layer lines a surface of the trenches. At least one trench fill layer on the dielectric layer fills the trenches.

A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 m or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

A semiconductor device and its fabrication method are provided. The method includes providing a base substrate; forming a first well region and a second well region in the base substrate; forming a gate electrode structure, sidewall spacers, a doped source layer, a doped drain layer and a dielectric layer over the base substrate, where the doped source layer and the doped drain layer are respectively on two sides of the gate electrode structure and the sidewall spacers, and the gate electrode structure and the sidewall spacers are over the first well region and the second well region; removing a portion of the gate electrode structure on the second well region and a portion of the base substrate of the second well region to form a trench in the dielectric layer, where the trench exposes a portion of the sidewall spacers; and forming an isolation layer in the trench.

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a gate stack over an active region and a source/drain region in the active region adjacent the gate stack. The source/drain region includes a first semiconductor layer having a first germanium concentration and a second semiconductor layer over the first semiconductor layer. The second semiconductor layer has a second germanium concentration greater than the first germanium concentration. The source/drain region further includes a third semiconductor layer over the second semiconductor layer and a fourth semiconductor layer over the third semiconductor layer. The third semiconductor layer has a third germanium concentration greater than the second germanium concentration. The fourth semiconductor layer has a fourth germanium concentration less than the third germanium concentration.

A thin-film storage transistor includes (a) first and second semiconductor regions comprising polysilicon of a first conductivity; and (b) a channel region between the first and second semiconductor regions, the channel region comprising single-crystal epitaxial grown silicon, and wherein the thin-film storage transistor is formed above a monocrystalline semiconductor substrate.