Energy bands of a thin film containing molecular clusters are tuned by controlling the size and the charge of the clusters during thin film deposition. Using atomic layer deposition, an ionic cluster film is formed in the gate region of a nanometer-scale transistor to adjust the threshold voltage, and a neutral cluster film is formed in the source and drain regions to adjust contact resistance. A work function semiconductor material such as a silver bromide or a lanthanum oxide is deposited so as to include clusters of different sizes such as dimers, trimers, and tetramers, formed from isolated monomers. A type of Atomic Layer Deposition system is used to deposit on semiconductor wafers molecular clusters to form thin film junctions having selected energy gaps. A beam of ions contains different ionic clusters which are then selected for deposition by passing the beam through a filter in which different apertures select clusters based on size and orientation.

The reliability of a transistor including an oxide semiconductor can be improved by suppressing a change in electrical characteristics. A transistor included in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region in contact with the gate insulating film, a source region in contact with the second insulating film, and a drain region in contact with the second insulating film. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.

A device includes a dielectric layer, a conductive layer, electrode layers and an oxide semiconductor layer. The dielectric layer has a first surface and a second surface opposite to the first surface. The conductive layer is disposed on the first surface of the dielectric layer. The electrode layers are disposed on the second surface of the dielectric layer. The oxide semiconductor layer is disposed in between the second surface of the dielectric layer and the electrode layers, wherein the oxide semiconductor layer comprises a material represented by formula 1 (In.sub.xSn.sub.yTi.sub.zM.sub.mO.sub.n). In formula 1, 0<x<1, 0≤y<1, 0<z<1, 0<m<1, 0<n<1, and M represents at least one metal.

The present invention relates to a method for manufacturing a sample for thin film property measurement and analysis, and a sample manufactured thereby and, more specifically, to: a method for manufacturing a sample capable of measuring or analyzing various properties in one sample; and a sample manufactured thereby.

Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: providing a substrate in a reaction chamber; depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The substrate may include a sapphire substrate, a silicon oxide (SiO.sub.2) substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide (MoS.sub.2) substrate.

The present invention discloses a metal oxide (MO) semiconductor, which is implemented by respectively doping at least an oxide of rare earth element R and an oxide of rare earth element R′ into an indium-containing MO semiconductor to form an In.sub.xM.sub.yR.sub.nR′.sub.mO.sub.z semiconductor. According to the present invention, the extremely high oxygen bond breaking energy in the oxide of rare earth element R is used to effectively control the carrier concentration in the semiconductor, and a charge transportation center can be formed by using the characteristic that the radius of rare earth ions is equivalent to the radius of indium ions, so that the electrical stability of the semiconductor is improved. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

An oxide semiconductor sputtering target used in a sputtering process to deposit an active layer of a TFT. The oxide semiconductor sputtering target is formed from a material based on a composition of In, Sn, Ga, Zn, and O. The material contains gallium oxide, tin oxide, zinc oxide, and indium oxide. The In, Sn, Ga, and Zn contents are in ranges of 60% to 80%, 0.5% to 8%, 5% to 15%, and 10% to 30% by weight with respect to the weight of In+Sn+Ga+Zn, respectively. A method of fabricating a TFT includes depositing an active layer using the oxide semiconductor sputtering target. Such a TFT is used in a liquid crystal display (LCD), an organic light-emitting display, an electroluminescence display, and the like.

A method of depositing a material on a substrate is provided. The method includes generating a plasma remote from one or more sputter targets suitable for plasma sputtering, wherein at least one distinct region of the one or more targets includes an alkali metal, alkaline earth metal, alkali metal containing compound, alkaline earth metal containing compound or a combination thereof; generating sputtered material from the target or targets using the plasma; and depositing the sputtered material on the substrate, the working distance between the target and the substrate being within +/−50% of the theoretical mean free path of the system.

A substrate comprising a III-N base layer comprising a first portion and a second portion, the first portion of the III-N base layer having a first natural lattice constant and a first dislocation density; and a first III-N layer having a second natural lattice constant and a second dislocation density on the III-N base layer, the first III-N layer having a thickness greater than 10 nm. An indium fractional composition of the first III-N layer is greater than 0.1; the second natural lattice constant is at least 1% greater than the first natural lattice constant; a strain-induced lattice constant of the first III-N layer is greater than 1.0055 times the first natural lattice constant; and the second dislocation density is less than 1.5 times the first dislocation density.

Provided are a method for preparing an InGaN-based epitaxial layer on a Si substrate (12), as well as a silicon-based InGaN epitaxial layer prepared by the method. The method may include the steps of: 1) directly growing a first InGaN-based layer (11) on a Si substrate (12); and 2) growing a second InGaN-based layer on the first InGaN-based layer (11).