A method includes forming a doped region on a top portion of a substrate, forming a first epitaxial layer over the substrate, forming a recess in the first epitaxial layer, the recess being aligned to the doped region, performing a surface clean treatment in the recess, the surface clean treatment includes: oxidizing surfaces of the recess to form an oxide layer in the recess, and removing the oxide layer from the surfaces of the recess, and forming a second epitaxial layer in the recess.

The disclosure relates to a thin film forming device and a thin film forming method using the same capable of improving the film quality of a silicon thin film by dividing a reaction space in a process chamber of the thin film forming device and thereby forming the silicon thin film on a substrate in a first space and treating a surface of the silicon thin film, formed in the first space, in a second space by using plasma. By the thin film forming device and the thin film forming method using the same according to the disclosure, with a trend that a pattern is complicated and the depth of the pattern increases, impurities in a thin film may be more efficiently removed, a uniform thin film may be formed on a pattern, and the grain size of the crystals of a silicon thin film may be made uniform.

A manufacturing method of a display apparatus including preparing a substrate, forming an amorphous silicon layer on the substrate, cleaning the amorphous silicon layer with hydrofluoric acid, crystallizing the amorphous silicon layer into a polycrystalline silicon layer, and forming a metal layer directly on the polycrystalline silicon layer.

A thin-film storage transistor includes (a) first and second semiconductor regions comprising polysilicon of a first conductivity; and (b) a channel region between the first and second semiconductor regions, the channel region comprising single-crystal epitaxial grown silicon, and wherein the thin-film storage transistor is formed above a monocrystalline semiconductor substrate.

A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 μm to about 2 μm, and a length of the channel of the third transistor is in a range of about 1 μm to about 2.5 μm.

Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

A semiconductor includes a substrate, a semiconductor fin, an STI structure, a fin sidewall spacer, and a doped silicon layer. The semiconductor fin extends from the substrate. The STI structure laterally surrounds a lower portion of the semiconductor fin. The fin sidewall spacer extends along a middle portion of the semiconductor fin that is above the lower portion of the semiconductor fin. The doped silicon layer wraps around three sides of an upper portion of the semiconductor fin that is above the middle portion of the semiconductor fin.

The disclosure provides a film surface treatment method and a film surface treatment device. By etching a surface of the film with hydrofluoric acid, substances on the surface of the film can be etched away; by cleaning the hydrofluoric acid on the surface, subjected to etching, of the film with a cleaning solution, residual hydrofluoric acid on the surface of the film can be removed, so that over etching to a film caused by the residual hydrofluoric acid can be avoided; and by oxidizing the surface, subjected to cleaning, of the film with ozone water, a compact and uniform oxide layer can be formed on the surface of the film. In this way, the effect of an ELA process can be improved.

Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.

Described herein is a method for growing InN, GaN, and AlN materials, the method comprising alternate growth of GaN and either InN or AlN to obtain a film of In.sub.xGa.sub.1xN, Al.sub.xGa.sub.1xN, Al.sub.xIn.sub.1xN, or Al.sub.xIn.sub.yGa.sub.1(x+y)N.