A semiconductor device of the present invention includes a semiconductor layer, a gate trench that defines a source region of a first conductivity type in the semiconductor layer, a channel region of a second conductivity type of a lower part of the source region, a source trench that passes through the source region and the channel region, an impurity region of the second conductivity type of a bottom part and a side part of the source trench, a source electrode on the semiconductor layer, and a highly-concentrated impurity region of the second conductivity type, the highly-concentrated impurity region having a contact portion connected to the source electrode at a surface of the semiconductor layer, the highly-concentrated impurity region passing through the source region and extending to a position deeper than the source region, the highly-concentrated impurity region having a concentration higher than the impurity region.

The present disclose relates to a SiC MOSFET device and a manufacturing method thereof. The method includes providing a semiconductor base of a first doping type; forming a patterned first barrier layer on an upper surface; forming a source region extending from the upper surface to the interior of the semiconductor base by taking the first barrier layer as a mask, wherein the source region is of the first doping type; etching a part of the first barrier layer to form a second barrier layer, and allowing anion implantation window of the second barrier layer to be larger than the ion implantation window of the first barrier layer; forming a first type base region by taking the second barrier layer as a mask, wherein the first type base region is of a second doping type; and forming a contact region of the second doping type.

Semiconductor devices and methods of forming a semiconductor device that includes a deep shielding pattern that may improve a reliability and/or a functioning of the device. An example method may include forming a wide band-gap semiconductor layer structure on a substrate, the semiconductor layer structure including a drift region that has a first conductivity type; forming a plurality of gate trenches in an upper portion of the semiconductor layer structure, the gate trenches spaced apart from each other, each gate trench having a bottom surface, a first sidewall, a second sidewall, and an upper opening; forming an obstruction over a portion of each gate trench that partially obscures the upper opening; and implanting dopants having a second conductivity type that is opposite the first conductivity type into the bottom surfaces of the gate trenches, where the dopants implanted into the bottom surface of the gate trenches form deep shielding patterns.

A technique stabilizing properties of SBDs is provided. An SBD is provided with a p-type contact region in contact with an anode electrode, and an n-type drift region in Schottky contact with the anode electrode. The p-type contact region includes a first p-type region having a corner portion, a second p-type region connected to the corner portion, and an edge filling portion located at a connection between the first p-type region and the second p-type region. First and second extended lines intersect at an acute angle, where the first extended line is a line extended from a contour of the first p-type region toward the connection and the second extended line is a line extended from a contour of the second p-type region toward the connection. An acute angle edge formed between the first extended line and the second extended line is filled with the edge filling portion.

In a substrate processing method according to the embodiment, a first material is implanted into a surface of a target film to modify the surface of the target film. The surface of the target film is dissolved to remove the surface of the target film by bringing a catalytic material close to the surface of the target film or by contacting the catalytic material to the surface of the target film while supplying a process solution on the surface of the target film which has been modified.

A semiconductor device according to an embodiment includes a first-conductivity-type SiC substrate, a first-conductivity-type SiC layer provided on the SiC substrate, having a first surface, and having a lower first-conductivity-type impurity concentration than the SiC substrate, first second-conductivity-type SiC regions provided in the first surface of the SiC layer, second second-conductivity-type SiC regions provided in the first SiC regions and having a higher second-conductivity-type impurity concentration than the first SiC region, silicide layers provided on the second SiC regions and having a second surface, a difference between a distance from the SiC substrate to the second surface and a distance from the SiC substrate to the first surface being equal to or less than 0.2 μm, a first electrode provided to contact with the SiC layer and the silicide layers, and a second electrode provided to contact with the SiC substrate.

A disclosed super-junction (SJ) device includes a first epitaxial (epi) layer that forms a first SJ layer of the SJ device, and includes a second epi layer disposed on the first SJ layer that forms a device layer of the SJ device. An active area of the first and second epi layers includes a first set of SJ pillars comprising a particular doping concentration of a first conductivity type and a second set of SJ pillars comprising the particular doping concentration of a second conductivity type. A termination area of the first and second epi layers has a minimized epi doping concentration of the first conductivity type that is less than the particular doping concentration, and the termination area of the second epi layer includes a plurality of floating regions of the second conductivity type that form a junction termination of the SJ device.

A semiconductor apparatus has a silicon carbide substrate heavily doped with the first conductivity type and a lightly doped silicon carbide drift region of the first conductivity type over the silicon carbide substrate. A first body region in the drift region is doped with second conductivity type opposite the first. A first source region in the first body region is heavily doped with the first conductivity type. A gate trench is formed in the first source region and first body region. At least one sidewall of the gate trench is parallel to a crystal plane of the silicon carbide structure having greater carrier mobility than a C-face thereof. The gate trench extends a length of the first body region and the source region to a separation region laterally adjacent to the first region wherein the separation region is in the drift region.

According to one embodiment, a semiconductor device includes a structure, an insulating film, a control electrode, first and second electrodes. The structure has a first surface, and includes a first, a second, and a third semiconductor region. The structure has a portion including the first, second, and third semiconductor regions arranged in a first direction along the first surface. The insulating film is provided on the first surface. The control electrode is provided on the insulating film. The first electrode is electrically connected to the third semiconductor region. The second electrode is electrically connected to the first semiconductor region. The insulating film includes a charge trap region. A bias voltage is applied to the first and second electrodes, and includes a shift voltage. The shift voltage shifts a reference potential of a voltage applied to the first and second electrodes by a certain voltage.

Disclosed is a bipolar semiconductor device, comprising a semiconductor body having a first surface; and a base region of a first doping type and a first emitter region in the semiconductor body, wherein the first emitter region adjoins the first surface and comprises a plurality of first type emitter regions of a second doping type complementary to the first doping type, a plurality of second type emitter regions of the second doping type, a plurality of third type emitter regions of the first doping type, and a recombination region comprising recombination centers, wherein the first type emitter regions and the second type emitter regions extend from the first surface into the semiconductor body, wherein the first type emitter regions have a higher doping concentration and extend deeper into the semiconductor body from the first surface than the second type emitter regions, wherein the third type emitter regions adjoin the first type emitter regions and the second type emitter regions, and wherein the recombination region is located at least in the first type emitter regions and the third type emitter regions.