A method and device for bonding a first substrate with a second substrate inside a sealed bonding chamber. The method includes: a) fixing of the first and second substrates, b) arranging of the first and second substrates, c) mutual approaching of the first and second substrates, d) contacting the first and second substrates at respective bond initiation points, e) generating a bonding wave running from the bond initiation points to side edges of the substrates, and f) influencing the bonding wave during course of the bonding wave, wherein targeted influencing of the bonding wave takes place by a regulated and/or controlled change of pressure inside the bonding chamber.

A method of manufacturing a graphene-baseddevice, comprising (i) providing a graphene assembly comprising one or more layers of graphene, a first photoresist layer disposed on the one or more layers of graphene, and an ultra-violet (UV) barrier layer disposed on the photoresist layer on an opposite side to the one or more layers of graphene; (ii) transferring the graphene assembly onto a substrate comprising at least one cavity so that the one or more layers of graphene traverse the at least one cavity; (iii) using photolithography to expose portions of the one or morelayers of graphene on opposite sides of the at least one cavity;(iv) forming conductive contacts over the exposed portions of graphene; (v) removing the UV barrier layer; and (vi) removing the first photoresist layer.

A method for bonding a first substrate and a second substrate includes: forming a protrusion at a partial region of the first substrate; measuring a position of the first substrate after the protrusion is formed in the first substrate; and bonding the first substrate and the second substrate by contacting the protrusion of the first substrate with a surface of the second substrate to form a contact region and enlarging the contact region.

A method of transferring a device layer in a SOI wafer obtained by stacking a Si layer, an insulator layer, and the device layer to a transfer substrate, includes a step of temporarily bonding a surface on which the device layer is formed of the SOI wafer to a supporting substrate using an adhesive for temporary bonding, a step of removing the Si layer of the SOI wafer until the insulator layer is exposed and obtaining a thinned device wafer, a step of coating only the transfer substrate with an adhesive for transfer and then bonding the insulator layer in the thinned device wafer to the transfer substrate via the adhesive for transfer, a step of thermally curing the adhesive for transfer under a load at the same time as or after bonding, a step of peeling off the supporting substrate, and a step of removing the adhesive.

Techniques related to a three-dimensional integration for qubits on multiple height crystalline dielectric and method of fabricating the same are provided. A superconductor structure can comprise a first buried layer that can comprise a first patterned superconducting layer of a first wafer bonded to a second patterned superconducting layer of a second wafer. The superconductor structure can also comprise a patterned superconducting film attached to the second wafer. Further, the superconductor structure can comprise a second buried layer that can comprise a third patterned superconducting layer of a third wafer bonded to the patterned superconducting film that can be attached to the second wafer.

First semiconductor structures are formed on a first wafer. At least one of the first semiconductor structures includes a processor, an array of SRAM cells, and a first bonding layer including first bonding contacts. Second semiconductor structures are formed on a second wafer. At least one of the second semiconductor structures includes an array of NAND memory cells and a second bonding layer including second bonding contacts. The first wafer and the second wafer are bonded in a face-to-face manner, such that the at least one of the first semiconductor structures is bonded to the at least one of the second semiconductor structures. The first bonding contacts of the first semiconductor structure are in contact with the second bonding contacts of the second semiconductor structure at a bonding interface. The bonded first and second wafers are diced into dies. At least one of the dies includes the bonded first and second semiconductor structures.

The present disclosure provides a method for wafer bonding, including providing a wafer, forming a sacrificial layer on a top surface of the first wafer, trimming an edge of the first wafer to obtain a first wafer area, cleaning the top surface of the first wafer, removing the sacrificial layer, and bonding the top surface of the first wafer to a second wafer having a second wafer area greater than the first wafer area.

A method for directly bonding a first and a second substrate. The method comprises removing surface oxide layers from bonding faces of the first and of the second substrate, and hydrogen passivation of the bonding faces, then, in a vacuum, electron impact hydrogen desorption on the bonding faces followed by placement of the bonding faces in intimate contact with one another.

A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 μm thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.

A method for fabricating a semiconductor wafer is provided, where the semiconductor wafer includes a diamond layer and a semiconductor layer having III-Nitride compounds. The method includes the steps of: disposing a nucleation layer on a SiC substrate and disposing at least one semiconductor layer on the nucleation layer, the at least one semiconductor layer including a III-Nitride compound. The method further includes the steps of: disposing a protection layer on the at least one semiconductor layer; bonding a carrier wafer to the protection layer, the carrier wafer including a SiC substrate; removing the substrate, the nucleation layer and a portion of the at least one semiconductor layer; disposing a diamond layer on the at least one semiconductor layer; depositing a substrate wafer on the diamond layer; and removing the carrier wafer and the protection layer.