The present disclosure provides a semiconductor structure, including: a semiconductor device layer including a first surface and a second surface, wherein the first surface is at a front side of the semiconductor device layer, and the second surface is at a backside of the semiconductor device layer; an insulating layer above the second surface of the semiconductor device; and a through-silicon via (TSV) traversing the insulating layer. Associated manufacturing methods of the same are also provided.

Embodiments of semiconductor devices and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. First semiconductor structures are formed on a first wafer. At least one of the first semiconductor structures includes a processor and a first bonding layer including first bonding contacts. Second semiconductor structures are formed on a second wafer. At least one of the second semiconductor structures includes an array of SRAM cells and a second bonding layer including second bonding contacts. The first wafer and the second wafer are bonded in a face-to-face manner, such that the at least one of the first semiconductor structures is bonded to the at least one of the second semiconductor structures. The first bonding contacts of the first semiconductor structure are in contact with the second bonding contacts of the second semiconductor structure at a bonding interface. The bonded first and second wafers are diced into dies. At least one of the dies includes the bonded first and second semiconductor structures.

A method for fabricating a semiconductor device includes providing a semiconductor substrate and bonding the semiconductor substrate to a carrier. The semiconductor substrate includes an inert material layer and a semiconductor layer on the inert material layer. The semiconductor substrate is bonded to the carrier such that the inert material layer is between the carrier and the semiconductor substrate. By including an inert material layer between the carrier and the semiconductor substrate, a barrier against diffusion for any bonding agents used to bond the semiconductor substrate to the carrier is formed, thereby preserving the integrity of the semiconductor layer and allowing for the easy removal of the semiconductor substrate from the carrier.

A method for bonding a first substrate with a second substrate, with the following sequence: production of a first amorphous layer on the first substrate and/or production of a second amorphous layer on the second substrate, bonding of the first substrate with the second substrate at the amorphous layer or at the amorphous layers to form a substrate stack, irradiation of the amorphous layer or the amorphous layers with radiation in such a way that the amorphous layer or the amorphous layers is/are transformed into a crystalline layer or crystalline layers.

A bonding apparatus according to the present embodiment includes a first holder and a second holder. The first holder holds a first substrate. The second holder includes a plurality of suction portions that suck a second substrate and that are arranged on concentric circles about a center of the second substrate substantially evenly. The second holder bonds the second substrate to the first substrate while opposing the second substrate to the first substrate. A first gas supply portion has a plurality of first gas supply ports to supply gas toward a bonding position between the first substrate and the second substrate. The first gas supply ports are provided to correspond to at least a part of outermost suction portions that are farthest ones of the suction portions from a center of the second holder, and are concentrically arranged on a circle about the center substantially evenly.

A device includes a device level having a metallization structure coupled to a semiconductor device and a transistor above the device level. The transistor has a body including a single crystal group III-V or group IV semiconductor material, a source structure on a first portion of the body and a drain structure on a second portion of the body, where the source structure is separate from the drain structure. The transistor further includes a gate structure including a first gate structure portion in a recess in the body and a second gate structure portion between the source structure and the drain structure. A source contact is coupled with the source structure and a drain contact is coupled with the drain structure. The source contact is in contact with the metallization structure in the device level.

Embodiments herein describe providing a decoupling capacitor on a first wafer (or substrate) that is then bonded to a second wafer to form an integrated decoupling capacitor. Using wafer bonding means that the decoupling capacitor can be added to the second wafer without having to take up space in the second wafer. In one embodiment, after bonding the first and second wafers, one or more vias are formed through the second wafer to establish an electrical connection between the decoupling capacitor and bond pads on a first surface of the second wafer. An electrical IC can then be flip chipped bonded to the first surface. As part of coupling the decoupling capacitor to the electrical IC, the decoupling capacitor is connected between the rails of a power source (e.g., VDD and VSS) that provides power to the electrical IC.

A method to process a 3D device, the method including: providing a first wafer including first transistors and a plurality of first interconnecting metal layers; providing a second wafer; processing the second wafer to form second transistors and a plurality of second interconnecting metal layers; processing further the second wafer with a first singulation process providing a plurality of dies; placing the plurality of dies on top of the first wafer; performing a bonding process to simultaneously bond the plurality of dies to the first wafer thus forming a bonded structure; and processing the bonded structure with a second singulation process providing a plurality of bonded dies, where the bonded structure includes oxide to oxide bonding, and where the second singulation process includes an etch process.

An integrated device, the device including: a first level including a first mono-crystal layer, the first mono-crystal layer including a plurality of single crystal transistors; an overlaying oxide on top of the first level; a second level including a second mono-crystal layer, the second level overlaying the oxide, where the second mono-crystal layer includes a plurality of first image sensors and alignment marks; and a third level overlaying the second level, where the third level includes a plurality of second image sensors, where the third level is aligned to the alignment marks, where the second level is bonded to the first level, and where the bonded includes an oxide to oxide bond.

A semiconductor device, the device including: a first single crystal substrate and plurality of logic circuits, where the first single crystal substrate has a device area, where the device area is significantly larger than a reticle size, where the plurality of logic circuits include an array of processors, where the plurality of logic circuits include a first logic circuit, a second logic circuit, and third logic circuit, where the plurality of logic circuits include switching circuits to support replacing the first logic circuit and the second logic circuit by the third logic circuit; and a second single crystal substrate, where the second single crystal substrate is disposed atop the first single crystal substrate.