In an embodiment, a device includes: a first device including: an integrated circuit device having a first connector; a first photosensitive adhesive layer on the integrated circuit device; and a first conductive layer on the first connector, the first photosensitive adhesive layer surrounding the first conductive layer; a second device including: an interposer having a second connector; a second photosensitive adhesive layer on the interposer, the second photosensitive adhesive layer physically connected to the first photosensitive adhesive layer; and a second conductive layer on the second connector, the second photosensitive adhesive layer surrounding the second conductive layer; and a conductive connector bonding the first and second conductive layers, the conductive connector surrounded by an air gap.

A method for surface treatment of an at least primarily crystalline substrate surface of a substrate such that by amorphization of the substrate surface, an amorphous layer is formed at the substrate surface with a thickness d>0 nm of the amorphous layer. This invention also relates to a corresponding device for surface treatment of substrates.

A package structure and method of forming the same are provided. The package structure includes a die, a first dielectric layer, a second dielectric layer and a conductive terminal. The first dielectric layer covers a bottom surface of the die and includes a first edge portion and a first center portion in contact with the bottom surface of the die. The first edge portion is thicker than the first center portion. The second dielectric layer is disposed on the first dielectric layer and laterally surrounding the die. The second dielectric layer includes a second edge portion on the first edge portion and a second center portion in contact with a sidewall of the die. The second edge portion is thinner than the second center portion. The conductive terminal is disposed over the die and the second dielectric layer and electrically connected to the die.

Methods of forming a semiconductor device and semiconductor device formed by the methods are provided. The methods of forming a semiconductor device may include providing a first substrate and a first bonding layer that is provided on the first substrate, forming a sacrificial pattern and an active pattern on a second substrate, forming a second bonding layer on the active pattern, bonding the second bonding layer onto the first bonding layer, removing the second substrate, and removing the sacrificial pattern to expose the active pattern. Forming the sacrificial pattern and the active pattern on the second substrate may include forming a preliminary sacrificial pattern and the active pattern on the second substrate and oxidizing the preliminary sacrificial pattern. The preliminary sacrificial pattern and the active pattern may be sequentially stacked on the second substrate.

Sensors for detecting a substitution between chemicals may include an upper electrode and an electrical signal measurement circuit. A first chemical and a second chemical may be sequentially applied to the upper electrode. A triboelectrification may be generated between the upper electrode and the first and second chemicals to flow different electrical signals through the upper electrode. The electrical signal measurement circuit may measure the electrical signals to detect the substitution between the first and second chemicals. Thus, the second chemical may be applied to a semiconductor substrate from the substitution timing so that an original function of the second chemical may be maintained without a delay of the time for fabricating a semiconductor device.

Disclosed is a method of reducing surface unevenness of a semiconductor wafer (100). In a preferred embodiment, the method comprises: removing a portion of a deposited layer and a protective layer thereon using a first slurry to provide an intermediate surface (1123). In the described embodiment, the deposited layer includes an epitaxial layer (112) and the protective layer includes a first dielectric layer (113). The first slurry includes particles with a hardness level the same as or exceeding that of the epitaxial layer (112). A slurry for use in wafer fabrication for reducing surface unevenness of a semiconductor wafer is also disclosed.

A method for bonding a first substrate with a second substrate at respective contact faces of the substrates with the following steps: holding the first substrate to a first sample holder surface of a first sample holder with a holding force F.sub.H1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force F.sub.H2; contacting the contact faces at a bond initiation point and heating at least the second sample holder surface to a heating temperature T.sub.H; bonding of the first substrate with the second substrate along a bonding wave running from the bond initiation point to the side edges of the substrates, wherein the heating temperature T.sub.H is reduced at the second sample holder surface during the bonding.

Method for producing an interface for assembling temporarily a microelectronic support and a handle, comprising at least the formation of a first layer comprising at least one material capable of releasing at least one chemical species under the action of a physical-chemical treatment, the formation of a second layer comprising at least one material capable of receiving the at least one chemical species so as to cause its embrittlement, and the embrittlement of the interface by application of a heat treatment, such that the at least one species is released from the first layer and reacts with all or part of the material of the second layer.

A bonding system includes a surface modifying apparatus, a surface hydrophilizing apparatus and a bonding apparatus. The surface modifying apparatus is configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate with plasma. The surface hydrophilizing apparatus is configured to hydrophilize the modified bonding surfaces of the first substrate and the second substrate. The bonding apparatus includes a condensation suppressing gas discharge unit, and is configured to bond the hydrophilized bonding surfaces of the first substrate and the second substrate by an intermolecular force. The condensation suppressing gas discharge unit is configured to discharge a condensation suppressing gas toward a space between a peripheral portion of the bonding surface of the first substrate and a peripheral portion of the bonding surface of the second substrate facing each other.

Methods of forming SOI substrates are disclosed. In some embodiments, an epitaxial layer and an oxide layer are formed on a sacrificial substrate. An etch stop layer is formed in the epitaxial layer. The sacrificial substrate is bonded to a handle substrate at the oxide layer. The sacrificial substrate is removed. The epitaxial layer is partially removed until the etch stop layer is exposed.