Techniques related to a three-dimensional integration for qubits on crystalline dielectric and method of fabricating the same are provided. A superconductor structure can comprise a first wafer comprising a first crystalline silicon layer attached to a first patterned superconducting layer, and a second wafer comprising a second crystalline silicon layer attached to a second patterned superconducting layer. The second patterned superconducting layer of the second wafer can be attached to the first patterned superconducting layer of the first wafer. A buried layer can comprise the first patterned superconducting layer and the second patterned superconducting layer. The buried layer can comprise one or more circuits. The superconductor structure can also comprise a transmon qubit that can comprise a Josephson junction and one or more capacitor pads comprising superconducting material. The Josephson junction can comprise a first superconductor contact, a tunnel barrier layer, and a second superconductor contact.

Direct-bonded native interconnects and active base dies are provided. In a microelectronic architecture, active dies or chiplets connect to an active base die via their core-level conductors. These native interconnects provide short data paths, which forgo the overhead of standard interfaces. The system saves redistribution routing as the native interconnects couple in place. The base die may contain custom logic, allowing the attached dies to provide stock functions. The architecture can connect diverse interconnect types and chiplets from various process nodes, operating at different voltages. The base die may have state elements for drive. Functional blocks aboard the base die receive native signals from diverse chiplets, and communicate with all attached chiplets. The chiplets may share processing and memory resources of the base die. Routing blockages are minimal, improving signal quality and timing. The system can operate at dual or quad data rates. The architecture facilitates ASIC, ASSP, and FPGA ICs and neural networks, reducing footprint and power requirements.

Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a device includes a first component having a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. A plurality of mesa shapes are formed within the n-side semiconductor layer, the active light emitting layer, and the p-side semiconductor layer. The semiconductor layer stack comprises a III-V semiconductor material. The device also includes a second component having a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component, first contacts of the first component are aligned with and bonded to second contacts of the second component, and a run-out between the first contacts and the second contacts is less than 200 nm.

Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a micro-LED includes a first component having a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The semiconductor layer stack includes a III-V semiconductor material. The micro-LED also includes a second component having a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component, first contacts of the first component are aligned with and bonded to second contacts of the second component, a surface recombination velocity (SRV) of the micro-LED is less than or equal to 3E4 cm/s, and an e-h diffusion of the micro-LED is less than or equal to 20 cm.sup.2/s.

Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a method includes performing p-side processing of a first component. The p-side processing is performed from a direction adjacent to a surface of a p-side semiconductor layer of the first component that is opposite to an active light emitting layer of the first component. The method also includes aligning first contacts of the first component with second contacts of the second component, and subsequently performing hybrid bonding of the first component to the second component by performing dielectric bonding of a first dielectric material of the first component with a second dielectric material of the second component at a first temperature, and subsequently performing metal bonding of the first contacts of the first component with the second contacts of the second component by annealing the first contacts and the second contacts at a second temperature.

Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a device includes a first component and a second component. The first component includes a semiconductor layer stack having an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The semiconductor layer stack includes a III-V semiconductor material. The second component includes a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component. First contacts of the first component are aligned with and bonded to second contacts of the second component. The first contacts of the first component form a first pattern within the first dielectric material of the first component, and the second contacts of the second component form a second pattern within the second dielectric material of the second component.

Direct-bonded native interconnects and active base dies are provided. In a microelectronic architecture, active dies or chiplets connect to an active base die via their core-level conductors. These native interconnects provide short data paths, which forgo the overhead of standard interfaces. The system saves redistribution routing as the native interconnects couple in place. The base die may contain custom logic, allowing the attached dies to provide stock functions. The architecture can connect diverse interconnect types and chiplets from various process nodes, operating at different voltages. The base die may have state elements for drive. Functional blocks aboard the base die receive native signals from diverse chiplets, and communicate with all attached chiplets. The chiplets may share processing and memory resources of the base die. Routing blockages are minimal, improving signal quality and timing. The system can operate at dual or quad data rates. The architecture facilitates ASIC, ASSP, and FPGA ICs and neural networks, reducing footprint and power requirements.

A method of transferring a thin film from a substrate to a flexible support that includes transfer of the flexible support by a layer of polymer, crosslinkable under ultraviolet light, directly on the thin film, the adhesion energy of the polymer evolving according to its degree of crosslinking, decreasing to an energy point d minimum adhesion achieved for a nominal crosslinking rate, then increasing for a crosslinking rate greater than the nominal crosslinking rate, then apply, on the polymer layer, an ultraviolet exposure parameterized so as to stiffen the polymer layer and have an adhesion energy between the thin film and the flexible support greater than an adhesion energy between the thin film and the substrate, then remove the substrate.

Embodiments of bonded unified semiconductor chips and fabrication and operation methods thereof are disclosed. In an example, a unified semiconductor chip includes a first semiconductor structure including one or more processors, an array of embedded DRAM cells, and a first bonding layer including a plurality of first bonding contacts. The unified semiconductor chip also includes a second semiconductor structure including an array of NAND memory cells and a second bonding layer including a plurality of second bonding contacts. The unified semiconductor chip further includes a bonding interface between the first bonding layer and the second bonding layer. The first bonding contacts are in contact with the second bonding contacts at the bonding interface.

Embodiments of semiconductor devices and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure including a processor, an array of static random-access memory (SRAM) cells, and a first bonding layer including a plurality of first bonding contacts. The semiconductor device also includes a second semiconductor structure including an array of NAND memory cells and a second bonding layer including a plurality of second bonding contacts. The semiconductor device further includes a bonding interface between the first bonding layer and the second bonding layer. The first bonding contacts are in contact with the second bonding contacts at the bonding interface.