According to an embodiment, a sensor package includes an electrically insulating substrate including a cavity in the electrically insulating substrate, an ambient sensor, an integrated circuit die embedded in the electrically insulating substrate, and a plurality of conductive interconnect structures coupling the ambient sensor to the integrated circuit die. The ambient sensor is supported by the electrically insulating substrate and arranged adjacent the cavity.

A method and a corresponding device for bonding a first substrate with a second substrate at mutually facing contact faces of the substrates. The method includes holding of the first substrate to a first holding surface of a first holding device and holding of the second substrate to a second holding surface of a second holding device. A change in curvature of the contact face of the first substrate and/or a change in curvature of the contact face of the second substrate are controlled during the bonding.

A method for bonding a first substrate with a second substrate at respective contact faces of the substrates with the following steps: holding the first substrate to a first sample holder surface of a first sample holder with a holding force F.sub.H1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force F.sub.H2; contacting the contact faces at a bond initiation point and heating at least the second sample holder surface to a heating temperature T.sub.H; bonding of the first substrate with the second substrate along a bonding wave running from the bond initiation point to the side edges of the substrates, wherein the heating temperature T.sub.H is reduced at the second sample holder surface during the bonding.

A multilayer device includes a substrate having a trench extending along a first surface of the substrate. A first layer disposed on the first surface of the substrate, the first layer comprising a given surface and another surface. A dielectric layer is formed between the given surface of the first layer and the first surface of the substrate. An active region disposed on the other surface of the first layer overlying the trench, wherein at least a portion of the active region resides substantially above a region defined by the trench.

A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate according to the following steps: forming a reservoir in a surface layer on the first contact surface, at least partially filling the reservoir with a first educt or a first group of educts, contacting the first contact surface with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.

Method for producing an interface for assembling temporarily a microelectronic support and a handle, comprising at least: the formation of a first layer comprising at least one material capable of releasing at least one chemical species under the action of a physical-chemical treatment, the formation of a second layer comprising at least one material capable of receiving the at least one chemical species so as to cause its embrittlement, the embrittlement of the interface by application of a heat treatment, such that the at least one species is released from the first layer and reacts with all or part of the material of the second layer.

[Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

A semiconductor substrate structure and process for fabrication of the semiconductor substrate structure are described. The semiconductor substrate structure includes a silicon carbide (SiC) wafer substrate, an active gallium nitride (GaN) layer and a layer of microcrystalline diamond (MCD) layer disposed between the SiC wafer substrate and the GaN active layer. The MCD) layer is bonded to the SiC wafer substrate and to the GaN active layer.

This method comprises the steps of: a) forming a set of first trenches on the first surface of the wafer; b) forming a set of second trenches on the second surface of the wafer, at least partially facing the first trenches; c) filling the first trenches with a first material having a CTE .sub.1; d) filling the second trenches with a second material having a CTE .sub.2, and verifying .sub.2>.sub.0 or .sub.2<.sub.0 depending on whether the first material verifies .sub.1>.sub.0 or .sub.1<.sub.0.

A method for surface treatment of an at least primarily crystalline substrate surface of a substrate such that by amorphization of the substrate surface, an amorphous layer is formed at the substrate surface with a thickness d>0 nm of the amorphous layer. This invention also relates to a corresponding device for surface treatment of substrates.