The invention relates to a process for stabilizing a bonding interface, located within a structure for applications in the fields of electronics, optics and/or optoelectronics and that comprises an oxide layer buried between an active layer and a receiver substrate, the bonding interface having been obtained by molecular adhesion. In accordance with the invention, the process further comprises irradiating this structure with a light energy flux provided by a laser, so that the flux, directed toward the structure, is absorbed by the energy conversion layer and converted to heat in this layer, and in that this heat diffuses into the structure toward the bonding interface, so as to thus stabilize the bonding interface.

Large area seed crystals for ammonothermal GaN growth are fabricated by deposition or layer transfer of a GaN layer on a CTE-matched handle substrate. The sides and back of the handle substrate are protected from the ammonothermal growth environment by a coating comprising an adhesion layer, a diffusion barrier layer, and an inert layer. A patterned mask, also comprising an adhesion layer, a diffusion barrier layer, and an inert layer, may be provided over the GaN layer to allow for reduction of the dislocation density by lateral epitaxial growth.

A method embodiment for forming a micro-electromechanical (MEMS) device includes providing a MEMS wafer, wherein a portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device. A carrier wafer is bonded to the MEMS wafer, and the carrier wafer is etched to expose the first membrane for the microphone device to an ambient environment. A MEMS substrate is patterned and portions of a first sacrificial layer are removed of the MEMS wafer to form a MEMS structure. A cap wafer is bonded to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure. A second sealed cavity and a cavity exposed to an ambient environment on opposing sides of the second membrane for the pressure sensor device are formed.

A bonding system (100), comprising a first substrate (110), a second substrate (120), an adhesive (200), comprising a plurality of cavities (240), in contact with a first contact surface (115) and with a second contact surface (125), and a plurality of solder balls (300), in contact with the first contact surface (115), positioned in the adhesive (200) between the first substrate (110) and the second substrate (120). Also, a bonding method to produce a solder-reinforced adhesive bond joining a first substrate (110) and second substrate (120), comprising applying an adhesive (200) comprising a plurality of cavities (240) on a first contact surface (115) of the first substrate (110), positioning each of a plurality of solder balls (300) at least partially into the adhesive (200), such that each of the plurality of solder balls (300) in contact with the first contact surface (115), connecting a second contact surface (125) of the second substrate (120) to a portion of the adhesive (200) opposite the first contact surface (115), and applying heat to the first contact surface (115) such that at least one solder ball (300) reaches a solder-ball bonding temperature.

A manufacturing method including supplying a first substrate including a first face designated front face, the front face being made of a III-V type semiconductor, supplying a second substrate, forming a radical oxide layer on the front face of the first substrate by executing a radical oxidation, assembling, by a step of direct bonding, the first substrate and the second substrate so as to form an assembly including the radical oxide layer intercalated between the first and second substrates, executing a heat treatment intended to reinforce the assembly interface, and making disappear, at least partially, the radical oxide layer.

The invention relates to a method for directly adhering a lower substrate to an upper substrate which includes the following steps: a) providing a mounting; b) positioning the lower substrate on the mounting, the mounting being configured such as to raise a portion of the lower substrate; c) positioning the upper substrate above the lower substrate; d) allowing the upper substrate to fall by gravity onto the lower substrate such as to form an initial contact point between the upper substrate and the lower substrate, located on the raised portion of the lower substrate; and e) completing the contact between the upper substrate and the lower substrate such as to adhere the upper substrate to the lower substrate by direct adhesion.

A wafer to wafer structure includes a first wafer, a second wafer. A first bonding layer and a second bonding layer are disposed between the first wafer and the second wafer. A plurality of first interconnects are disposed within the he first bonding layer. A plurality of second interconnects are disposed within the second bonding layer. An interface is disposed between the first bonding layer and the second bonding layer. At least a through silicon via penetrates the first wafer, the first bonding layer and the interface to enter the second bonding layer. The through silicon via contacts one of the first interconnects and one of the second interconnects.

Method for a controlled spalling utilizing vaporizable release layers. For example, a method comprises providing a base substrate, depositing a stressor layer and a vaporizable release layer on the base substrate, forming a flexible support layer on at least one of the stressor layer and the vaporizable release layer, spalling an upper portion of the base substrate, securing the spalled upper portion of the base substrate to a handle substrate, and vaporizing the vaporizable release layer.

A semiconductor wafer is formed with a first device layer having active devices. A handle wafer having a trap rich layer is bonded to a top surface of the semiconductor wafer. A second device layer having a MEMS device or acoustic filter device is formed on a bottom surface of the semiconductor wafer. The second device layer is formed either by monolithic fabrication processes or layer-transfer processes.

A semiconductor wafer is formed with a first device layer having active devices. A handle wafer having a trap rich layer is bonded to a top surface of the semiconductor wafer. A second device layer having a MEMS device or acoustic filter device is formed on a bottom surface of the semiconductor wafer. The second device layer is formed either by monolithic fabrication processes or layer-transfer processes.