Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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21/00
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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H01L21/02
Manufacture or treatment of semiconductor devices or of parts thereof
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H01L21/04
the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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H01L21/18
the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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H01L21/20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth; solid phase epitaxy
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H01L21/2003
characterised by the substrate
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H01L21/2011
the substrate being of crystalline insulating material, e.g. sapphire
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H01L21/2011

Metal oxide semiconductor-based light emitting device
12501747 · 2025-12-16 · ·

A semiconductor structure includes a superlattice with two or more unit cells, wherein each of the unit cells includes: a first epitaxial layer including NiO; and a second epitaxial layer including a second epitaxial oxide material. In some cases, the semiconductor structure can include: a first region including p-type conductivity, wherein the first region includes the superlattice; a second region including an epitaxial oxide material; and a third region including an epitaxial oxide material, wherein the second region is located between the first region and the third region along a growth direction.

METAL OXIDE SEMICONDUCTOR-BASED LIGHT EMITTING DEVICE
20260006950 · 2026-01-01 · ·

A semiconductor structure includes a superlattice with two or more unit cells, wherein each of the unit cells includes a first epitaxial layer including NiO or Ga.sub.2O.sub.3. Each of the unit cells can further include a second epitaxial layer including a second epitaxial oxide material selected from Ni.sub.zGa.sub.2(1z)O.sub.32z or Ni.sub.zAl.sub.2(1z>)O.sub.32z, where 0<z<1. In some cases, the second epitaxial oxide material can include Ni.sub.x(Al,Ga).sub.yO.sub.z.