A plasma processing apparatus includes: a stage having first and second placement surfaces; an elevating mechanism for raising and lowering a ring member on the second placement surface with respect to the second placement surface; a radio-frequency power source; and a controller for executing a cleaning process including an operation of separating the second placement surface and the ring member from each other by the elevating mechanism; and an operation of removing deposits accumulated on the stage and the ring member by supplying radio-frequency power from the radio-frequency power source to the stage to generate plasma. In the separation operation, a distance between the second placement surface and the ring member is set such that a density of plasma generated in a region between an outer edge of the first placement surface and a lower surface of the ring member is higher than that of plasma generated in other regions.

Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.

Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.

Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.

A plasma processing apparatus including a plasma processing chamber, a substrate support that is provided in the plasma processing chamber and on which a substrate is placed, a gas supply for supplying a processing gas to the plasma processing chamber, an RF power source for supplying pulsed RF power to the plasma processing chamber and/or the substrate support, and forming plasma from the processing gas, and a circuitry for controlling the supply of the pulsed RF power, in which the control device controls the RF power source such that an increasing function of a power level from a supply starting point of the pulsed RF power to a peak appearing point is a downward convex function, and/or a decreasing function of a power level from a peak ending point of the pulsed RF power to a supply ending point is a downward convex function.

There is provided an AlN single-crystal substrate of a circular shape with a radius r, wherein when the AlN single-crystal substrate is sectioned into three regions, the three regions being a central section, which is a region radially extending from a center of the AlN single-crystal substrate to 0.4r, a middle section, which is a region excluding the central section from a region radially extending from the center of the AlN single-crystal substrate to 0.7r, and an outer circumferential section, which is a region excluding the central section and the middle section from an entire region of the AlN single-crystal substrate, a dislocation density Dc of the central section, a dislocation density Dm of the middle section, and a dislocation density Dp of the outer circumferential section satisfy the relationship Dm>Dp>Dc.

A light emitting device includes a plurality of pixels arranged in a matrix in a first direction and in a second direction orthogonal to the first direction, over a substrate. Each of the plurality of pixels arranged in a matrix includes a conductive alignment layer over the substrate, a semiconductor layer including gallium nitride over the conductive alignment layer, a light emitting layer in an island shape over the semiconductor layer, and an electrode layer over the light emitting layer. A side surface of the light emitting layer is covered with an insulating layer. A reflective layer facing the side surface of the light emitting layer is provided over the insulating layer.

A light emitting device includes a substrate, a partition wall defining a plurality of pixels in a matrix over the substrate, a reflective layer covering the partition wall, and an insulating layer covering the reflective layer. Each of the plurality of pixels arranged in a matrix includes a conductive alignment layer over the substrate, a semiconductor layer containing gallium nitride over the conductive alignment layer, a light emitting layer over the semiconductor layer, and an electrode layer over the light emitting layer. A distance from an upper surface of the substrate to an upper surface of the reflective layer in a region overlapping the partition wall is greater than a distance from the upper surface of the substrate to an upper surface of the light emitting layer in a region not overlapping the partition wall.

Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.

Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.