Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.

A semiconductor device, a method of manufacturing the same and an electronic device including the semiconductor device are provided. According to embodiments, the semiconductor device may include a substrate, a first source/drain layer, a channel layer and a second source/drain layer stacked in sequence on the substrate, and a gate stack surrounding a periphery of the channel layer. The channel layer includes a channel region close to its peripheral surface and a body region disposed on an inner side of the channel region.

A method and structure for forming a fin bottom diode includes providing a substrate having a plurality of fins extending therefrom. Each of the plurality of fins includes a substrate portion and an epitaxial layer portion over the substrate portion. A first dopant layer is formed on sidewalls of a first region of the substrate portion of each of the plurality of fins. After forming the first dopant layer, a first annealing process is performed to form a first diode region within the first region of the substrate portion. A second dopant layer is formed on sidewalls of a second region of the substrate portion of each of the plurality of fins. After forming the second dopant layer, a second annealing process is performed to form a second diode region within the second region of the substrate portion of each of the plurality of fins.

A semiconductor device includes a first source/drain region on an upper surface of a semiconductor substrate that extends along a first direction to define a length and a second direction opposite the first direction to define a width. A channel region extends vertically in a direction perpendicular to the first and second directions from a first end contacting the first source/drain region to an opposing second end contacting a second source/drain region. A gate surrounds a channel portion of the channel region, and a first doped source/drain extension region is located between the first source/drain region and the channel portion. The first doped source/drain extension region has a thickness extending along the vertical direction. A second doped source/drain extension region is located between the second source/drain region and the channel portion. The second doped source/drain extension region has a thickness extending along the vertical direction that matches the first thickness.

Apparatuses and methods are disclosed. One such apparatus includes a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity. A boundary of the well has an edge that is substantially beneath an edge of an active area of a tap to the well.

A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, forming a first spacer over the dummy gate structure, implanting a first dopant in the fin to form a doped region of the fin adjacent the first spacer, removing the doped region of the fin to form a first recess, wherein the first recess is self-aligned to the doped region, and epitaxially growing a source/drain region in the first recess.

A semiconductor structure containing a gate-all-around nanosheet field effect transistor having a self-limited inner spacer composed of a rare earth doped germanium dioxide that provides source/drain isolation between rare earth metal silicide ohmic contacts is provided.

A semiconductor device includes a substrate, at least one source drain feature, a gate structure, and at least one gate spacer. The source/drain feature is present at least partially in the substrate. The gate structure is present on the substrate. The gate spacer is present on at least one sidewall of the gate structure. At least a bottom portion of the gate spacer has a plurality of dopants therein.

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

The present disclosure relates generally to an epitaxy scheme for forming source/drain regions in a semiconductor device, such as an n-channel device. In an example, a method of manufacturing a semiconductor device includes forming an active area on a substrate. The active area includes a source/drain region. The formation of the source/drain region includes forming a barrier region along a bottom surface and side surface of a recess in the active area. The barrier region includes arsenic having a first dopant concentration. The formation of the source/drain region further includes forming an epitaxial material on the barrier region in the recess. The epitaxial material includes phosphorous having a second dopant concentration.