Provided are a crop growth information monitoring method and device and a method for manufacturing a crop growth information monitoring device. The crop growth information monitoring device includes an air exchange channel support, a crop information sensing sensitive layer, an electrode, and a substrate. The air exchange channel support is disposed on the substrate, and in a case where the air exchange channel support is in contact with a monitoring point on a surface of a crop, a gas exchange channel is formed between the crop information sensing sensitive layer and the surface of the crop. The crop information sensing sensitive layer is configured to sense information about molecules emitted through crop transpiration so as to generate a molecule concentration capture signal. The electrode is plated on an upper surface of the substrate, and the crop information sensing sensitive layer is coated on the electrode.

Provided are a crop growth information monitoring method and device and a method for manufacturing a crop growth information monitoring device. The crop growth information monitoring device includes an air exchange channel support, a crop information sensing sensitive layer, an electrode, and a substrate. The air exchange channel support is disposed on the substrate, and in a case where the air exchange channel support is in contact with a monitoring point on a surface of a crop, a gas exchange channel is formed between the crop information sensing sensitive layer and the surface of the crop. The crop information sensing sensitive layer is configured to sense information about molecules emitted through crop transpiration so as to generate a molecule concentration capture signal. The electrode is plated on an upper surface of the substrate, and the crop information sensing sensitive layer is coated on the electrode.

Exemplary electroplating systems may include a vessel. The systems may include a paddle disposed within the vessel. The paddle may be characterized by a first surface and a second surface. The first surface of the paddle may be include a plurality of ribs that extend upward from the first surface. The plurality of ribs may be arranged in a generally parallel manner about the first surface. The paddle may define a plurality of apertures through a thickness of the paddle. Each of the plurality of apertures may have a diameter of less than about 5 mm. The paddle may have an open area of less than about 15%.

A method of depositing a metal material on an isolated seed layer uses a barrier layer as a conductive path for plating. The method may include depositing a barrier layer on a substrate wherein the barrier layer provides adhesion for seed layer material and inhibits migration of the seed layer material, forming at least one isolated seed layer area on the barrier layer on the substrate, and depositing the metal material on the at least one isolated seed layer area using an electrochemical deposition process wherein the barrier layer provides a current path to deposit the metal material on the at least one isolated seed layer area.

A substrate having a recess, a diffusion barrier layer defining the recess, and a wiring exposed at a bottom of the recess is prepared. A metal ion, having a concentration not causing precipitation of a metal even when an electroless plating liquid comes into contact therewith, is attached to the diffusion barrier layer. The metal is precipitated in the recess by supplying the electroless plating liquid into the recess in a state that the metal ion is attached to the diffusion barrier layer.

A substrate having a recess, a diffusion barrier layer defining the recess, and a wiring exposed at a bottom of the recess is prepared. A metal ion, having a concentration not causing precipitation of a metal even when an electroless plating liquid comes into contact therewith, is attached to the diffusion barrier layer. The metal is precipitated in the recess by supplying the electroless plating liquid into the recess in a state that the metal ion is attached to the diffusion barrier layer.

In one implementation a cathode for electrochemical metal removal has a generally disc-shaped body and a plurality of channels in the generally disc-shaped body, where the channels are configured for passing electrolyte through the body of the cathode. The channels may be fitted with non-conductive (e.g., plastic) tubes that in some embodiments extend above the body of the cathode to a height of at least 1 cm. The cathode may also include a plurality of indentations at the edge to facilitate electrolyte flow at the edge of the cathode. In some embodiments the cathode includes a plurality of non-conductive fixation elements on a conductive surface of the cathode, where the fixation elements are attachable to one or more handles for removing the cathode from the electrochemical metal removal apparatus.

In one implementation a cathode for electrochemical metal removal has a generally disc-shaped body and a plurality of channels in the generally disc-shaped body, where the channels are configured for passing electrolyte through the body of the cathode. The channels may be fitted with non-conductive (e.g., plastic) tubes that in some embodiments extend above the body of the cathode to a height of at least 1 cm. The cathode may also include a plurality of indentations at the edge to facilitate electrolyte flow at the edge of the cathode. In some embodiments the cathode includes a plurality of non-conductive fixation elements on a conductive surface of the cathode, where the fixation elements are attachable to one or more handles for removing the cathode from the electrochemical metal removal apparatus.

Methods and devices for forming a conductive line disposed over a substrate. A first dielectric layer is disposed over the substrate and coplanar with the conductive line. A second dielectric layer disposed over the conductive line and a third dielectric layer disposed over the first dielectric layer. A via extends through the second dielectric layer and is coupled to the conductive line. The second dielectric layer and the third dielectric layer are coplanar and the second and third dielectric layers have a different composition. In some embodiments, the second dielectric layer is selectively deposited on the conductive line.

Methods and devices for forming a conductive line disposed over a substrate. A first dielectric layer is disposed over the substrate and coplanar with the conductive line. A second dielectric layer disposed over the conductive line and a third dielectric layer disposed over the first dielectric layer. A via extends through the second dielectric layer and is coupled to the conductive line. The second dielectric layer and the third dielectric layer are coplanar and the second and third dielectric layers have a different composition. In some embodiments, the second dielectric layer is selectively deposited on the conductive line.