A semiconductor manufacturing method by a semiconductor manufacturing device includes: positioning an anode, which causes an oxidation reaction, in a first end of a base material containing an aluminum oxide and a cathode, which causes a reduction reaction, in a second end of the base material; heating the base material to melt it with the anode being in contact with the first end of the base material and the cathode being in contact with the second end of the base material; causing a current to flow between the anode and the cathode to cause a molten salt electrolysis reaction for a whole of or a part of a period in which the base material is at least partially melted; and after the molten salt electrolysis reaction, cooling the base material to form a p-type aluminum oxide semiconductor layer and an n-type aluminum oxide semiconductor layer.

In a method of atomic precision advanced manufacturing (APAM), an atomic or molecular resist layer on a substrate surface is selectively depassivated by locally exciting the substrate surface with an optical beam effective to eject adsorbed atoms or molecules from the substrate surface. The substrate surface is further processed by exposing it to a precursor gas, decomposing the precursor gas to release a dopant, and incorporating the dopant into the substrate surface.

In a method of atomic precision advanced manufacturing (APAM), an atomic or molecular resist layer on a substrate surface is selectively depassivated by locally exciting the substrate surface with an optical beam effective to eject adsorbed atoms or molecules from the substrate surface. The substrate surface is further processed by exposing it to a precursor gas, decomposing the precursor gas to release a dopant, and incorporating the dopant into the substrate surface.

A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Provided are apparatuses for manufacturing semiconductor devices. An apparatus includes a reaction chamber having a stage to be loaded on a substrate, wherein set plasma is formed over the stage, a plurality of gas supply lines connected to the reaction chamber, flow controllers formed on the plurality of gas supply lines, respectively, to control the amount of a gas supplied to the reaction chamber, and a gas splitter configured to supply a mixed gas to the flow controllers. The apparatus may be a thin film deposition apparatus using plasma and further include a flow control unit connected to the gas splitter and a gas supply source connected to the flow control unit.

Provided are apparatuses for manufacturing semiconductor devices. An apparatus includes a reaction chamber having a stage to be loaded on a substrate, wherein set plasma is formed over the stage, a plurality of gas supply lines connected to the reaction chamber, flow controllers formed on the plurality of gas supply lines, respectively, to control the amount of a gas supplied to the reaction chamber, and a gas splitter configured to supply a mixed gas to the flow controllers. The apparatus may be a thin film deposition apparatus using plasma and further include a flow control unit connected to the gas splitter and a gas supply source connected to the flow control unit.

The present invention relates to sensors comprising pattern illumination-based annealed coated substrate and one or more functional molecules and process of using same. Such process yields components that can have one or more electronic and/or optical functionalities that are integrated on the same substrate or film and to which one or more functional molecules can be attached to yield a sensor. In addition, such process does not require large-scale clean rooms and is easily configurable. Thus, rapid device prototyping, design change and evolution in the lab and on the production side is realized. The resulting sensors provide a sensing capability that is as good as or better than current sensors and can be tailored to sense specific biomaterials and/or chemicals.