The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus includes a gate electrode and a channel layer formed of a channel directly or through other layers on a side wall of the gate electrode, and wherein a portion of or whole the channel layer may be a p type oxide semiconductor (iridium oxide, for example).

The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus includes a gate electrode and a channel layer formed of a channel directly or through other layers on a side wall of the gate electrode, and wherein a portion of or whole the channel layer may be a p type oxide semiconductor (iridium oxide, for example).

A method for fabricating a metal oxide thin film transistor comprises selecting a substrate and fabricating a gate electrode thereon; growing a layer of dielectric or high permittivity dielectric on the substrate to serve as a gate dielectric layer; growing a first metal layer on the gate dielectric layer and a second metal layer on the first metal layer; fabricating a channel region at a middle position of the first metal layer and a passivation region at a middle position of the second metal layer; anodizing the metals of the passivation region and the channel region at atmospheric pressure and room temperature; fabricating a source and a drain; forming an active region comprising the source, the drain, and the channel region; depositing a silicon nitride layer on the active region; fabricating two electrode contact holes; depositing a metal aluminum film; and fabricating two metal contact electrodes by photolithography and etching.

A method for fabricating a metal oxide thin film transistor comprises selecting a substrate and fabricating a gate electrode thereon; growing a layer of dielectric or high permittivity dielectric on the substrate to serve as a gate dielectric layer; growing a first metal layer on the gate dielectric layer and a second metal layer on the first metal layer; fabricating a channel region at a middle position of the first metal layer and a passivation region at a middle position of the second metal layer; anodizing the metals of the passivation region and the channel region at atmospheric pressure and room temperature; fabricating a source and a drain; forming an active region comprising the source, the drain, and the channel region; depositing a silicon nitride layer on the active region; fabricating two electrode contact holes; depositing a metal aluminum film; and fabricating two metal contact electrodes by photolithography and etching.

Device and method A Schottky barrier thin-film transistor (SBTFT) 200A is described. The SBTFT 200A comprises a gate contact (110), a gate insulator layer (120), a Schottky source contact (150) and a conductive oxide drain contact (140) in contact with the source contact (150). Also described is an inverter, a logic gate, an integrated circuit, an analogue circuit, a pixel for a display, for example a liquid crystal display, LCD, or an organic light emitting diode display, OLED, or a display, for example a LCD or an OLED, comprising such a Schottky barrier thin-film transistor, SBTFT. Also described is a method of providing such a Schottky barrier thin-film transistor.

Device and method A Schottky barrier thin-film transistor (SBTFT) 200A is described. The SBTFT 200A comprises a gate contact (110), a gate insulator layer (120), a Schottky source contact (150) and a conductive oxide drain contact (140) in contact with the source contact (150). Also described is an inverter, a logic gate, an integrated circuit, an analogue circuit, a pixel for a display, for example a liquid crystal display, LCD, or an organic light emitting diode display, OLED, or a display, for example a LCD or an OLED, comprising such a Schottky barrier thin-film transistor, SBTFT. Also described is a method of providing such a Schottky barrier thin-film transistor.

The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

The present application discloses an array substrate, a display panel and a display device. The array substrate comprises: a plurality of data lines and a plurality of gate lines, a plurality of pixel units defined by the plurality of data lines and the plurality of gate lines, each pixel unit comprising a first pixel electrode, a second pixel electrode, and at least three thin film transistors, the pixel unit further comprising: a charge-discharge element, the charge-discharge element and a third thin film transistor in the at least three thin film transistors charging and discharging the pixel unit such that the pixel unit forms a first voltage region and a second voltage region with different voltages.

The present application discloses an array substrate, a display panel and a display device. The array substrate comprises: a plurality of data lines and a plurality of gate lines, a plurality of pixel units defined by the plurality of data lines and the plurality of gate lines, each pixel unit comprising a first pixel electrode, a second pixel electrode, and at least three thin film transistors, the pixel unit further comprising: a charge-discharge element, the charge-discharge element and a third thin film transistor in the at least three thin film transistors charging and discharging the pixel unit such that the pixel unit forms a first voltage region and a second voltage region with different voltages.