A method of coupling a first semiconductor device to a second semiconductor device can include encapsulating solder balls on a first surface of a first substrate of the first semiconductor device with an encapsulant material. In some embodiments, the method includes removing a portion of the encapsulant material and a portion the solder balls to form a mating surface. The method can include reflowing the solder balls. In some embodiments, the method includes inserting exposed conductive pillars of the second semiconductor device into the reflowed solder balls.

A method of coupling a first semiconductor device to a second semiconductor device can include encapsulating solder balls on a first surface of a first substrate of the first semiconductor device with an encapsulant material. In some embodiments, the method includes removing a portion of the encapsulant material and a portion the solder balls to form a mating surface. The method can include reflowing the solder balls. In some embodiments, the method includes inserting exposed conductive pillars of the second semiconductor device into the reflowed solder balls.

A method for forming semiconductor devices includes: grinding a backside of a semiconductor wafer with a grinding wheel during a first time interval, wherein the grinding wheel is forward moved during the first time interval, wherein a plurality of semiconductor devices are formed on the semiconductor wafer; and polishing the backside of the semiconductor wafer with the grinding wheel in a second time interval, wherein the grinding wheel is backward moved during the second time interval.

A method for forming semiconductor devices includes: grinding a backside of a semiconductor wafer with a grinding wheel during a first time interval, wherein the grinding wheel is forward moved during the first time interval, wherein a plurality of semiconductor devices are formed on the semiconductor wafer; and polishing the backside of the semiconductor wafer with the grinding wheel in a second time interval, wherein the grinding wheel is backward moved during the second time interval.

A method for producing an integrated circuit (IC) chip on a semiconductor device wafer is disclosed. In one aspect, the IC chip includes buried interconnect rails in the front end of line and a power delivery network (PDN) on the back side of the chip. The PDN is connected to the front side by micro-sized through semiconductor via (TSV) connections through the thinned semiconductor wafer. The production of the TSVs is integrated in the process flow for fabricating the interconnect rails, with the TSVs being produced in a self-aligned manner relative to the interconnect rails. After bonding the device wafer to a landing wafer, the semiconductor layer onto which the active devices of the chip have been produced is thinned from the back side, and the TSVs are exposed. The self-aligned manner of producing the TSVs enables scaling down the process towards smaller dimensions without losing accurate positioning of the TSVs.

A method for producing an integrated circuit (IC) chip on a semiconductor device wafer is disclosed. In one aspect, the IC chip includes buried interconnect rails in the front end of line and a power delivery network (PDN) on the back side of the chip. The PDN is connected to the front side by micro-sized through semiconductor via (TSV) connections through the thinned semiconductor wafer. The production of the TSVs is integrated in the process flow for fabricating the interconnect rails, with the TSVs being produced in a self-aligned manner relative to the interconnect rails. After bonding the device wafer to a landing wafer, the semiconductor layer onto which the active devices of the chip have been produced is thinned from the back side, and the TSVs are exposed. The self-aligned manner of producing the TSVs enables scaling down the process towards smaller dimensions without losing accurate positioning of the TSVs.

A method of fabricating a semiconductor device is provided in which an adhesive layer is disposed on a first surface of a first semiconductor substrate. A carrier substrate is provided on the first surface of the first semiconductor substrate, and the carrier substrate is separated from a surface of the adhesive layer while the adhesive layer is still attached to the first surface of the first semiconductor substrate.

A method of fabricating a semiconductor device is provided in which an adhesive layer is disposed on a first surface of a first semiconductor substrate. A carrier substrate is provided on the first surface of the first semiconductor substrate, and the carrier substrate is separated from a surface of the adhesive layer while the adhesive layer is still attached to the first surface of the first semiconductor substrate.

A method of coupling a first semiconductor device to a second semiconductor device can include encapsulating solder balls on a first surface of a first substrate of the first semiconductor device with an encapsulant material. In some embodiments, the method includes removing a portion of the encapsulant material and a portion the solder balls to form a mating surface. The method can include reflowing the solder balls. In some embodiments, the method includes inserting exposed conductive pillars of the second semiconductor device into the reflowed solder balls.

A method of coupling a first semiconductor device to a second semiconductor device can include encapsulating solder balls on a first surface of a first substrate of the first semiconductor device with an encapsulant material. In some embodiments, the method includes removing a portion of the encapsulant material and a portion the solder balls to form a mating surface. The method can include reflowing the solder balls. In some embodiments, the method includes inserting exposed conductive pillars of the second semiconductor device into the reflowed solder balls.