A semiconductor device includes a leadframe having a semiconductor chip arranged thereon and an electrically-insulating encapsulation molded onto the leadframe and the semiconductor chip. The leadframe is a pre-molded leadframe including a coupling surface having an alternation of electrically-conductive parts and insulating parts between electrically-conductive parts. The coupling surface includes a pattern of grooves and the electrically-insulating encapsulation includes anchoring protrusions extending into the grooves of the pattern of grooves in the coupling surface.

A package is disclosed. In one example, the package comprises a carrier, an electronic component mounted on the carrier, an encapsulant encapsulating at least part of the electronic component and at least part of the carrier and having a bottom side at a first vertical level. At least one lead is electrically coupled with the electronic component and comprising a first lead portion being encapsulated in the encapsulant and a second lead portion extending out of the encapsulant at the bottom side of the encapsulant. A functional structure at the bottom side extends up to a second vertical level different from the first vertical level.

A semiconductor package structure includes a semiconductor package structure includes a first supporting bar, a second supporting bar and an encapsulant. The second supporting bar is adjacent to the first supporting bar. The first supporting bar and the second supporting bar extend substantially along a first direction. The encapsulant covers the first supporting bar and the second supporting bar. The encapsulant defines a first recess and a second recess recessed from a lower surface of the encapsulant. The first recess extends substantially along a second direction different from the first direction. The second recess is located between the first recess and the second supporting bar.

A semiconductor device includes a leadframe, a semiconductor die attached to the leadframe, and an encapsulation material encapsulating the semiconductor die and a portion of the leadframe. The leadframe includes a first main face and a second main face opposite to the first main face. The leadframe includes leads wherein each lead includes a fully plated end face extending between an unplated first sidewall and an unplated second sidewall opposite to the first sidewall. The end face and the first and second sidewalls of each lead are perpendicular to the first and second main faces.

A semiconductor device includes a first die pad, a second die pad, a first semiconductor element, a second semiconductor element, an insulating element, first terminals, second terminals, and a sealing resin. The sealing resin has a top surface, a bottom surface, and first to third side surfaces. The first terminals include a first edge terminal located closest to the third side surface. The second terminals include a second edge terminal located closest to the third side surface. A first creepage distance, which is a shortest distance from the first edge terminal to the second edge terminal along the first side surface, the third side surface, and the second side surface, is shorter than a second creepage distance, which is a shortest distance from the first edge terminal to the second edge terminal along the first side surface, the bottom surface, and the second side surface.

A lead frame includes a first side having a first die attach pad that is bondable to a die, and a second side that has a second die attach pad that is bondable to another die. The lead frame includes multiple leads on the edges of the lead frame to connect the die. As part of a no-leads device, such as a quad flat no leads (QFN) or dual flat no-leads (DFN), one of the die attach pads is used in binding to a die, and the other die attach pad is used for thermal dissipation and mounting to a structure such as printed circuit board (PCB).

A packaged electronic device includes a stacked configuration of a first semiconductor die in a first recess in a first side of a first conductive plate, a second semiconductor die in a second recess in a first side of a second conductive plate, a third conductive plate electrically coupled to a second side of the second semiconductor die, and a package structure that encloses the first semiconductor die, and the second semiconductor die, where the package structure includes a side that exposes a portion of a second side of the first conductive plate.

A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The package structure includes an outer lead portion, an inner lead portion, an encapsulant, and a first conductive layer. The outer lead portion has a first surface and a second surface opposite to the first surface. The inner lead portion is connected to the outer lead portion. The inner lead portion has a first surface and a second surface opposite to the first surface. The encapsulant covers the first surface of the outer lead portion and the first surface of the inner lead portion. The second surface of the outer lead portion and the second surface of the inner lead portion are substantially coplanar and are recessed from a surface of the encapsulant. The first conductive layer is disposed on the second surface of the outer lead portion.

In a described example, a method includes: forming cavities in a die mount surface of a package substrate, the cavities extending into the die mount surface of the package substrate at locations corresponding to post connects on a semiconductor die to be flip-chip mounted to the package substrate; placing flux in the cavities; placing solder balls on the flux; and performing a thermal reflow process and melting the solder balls to form solder pads in the cavities on the package substrate.

A semiconductor device includes a first die pad, a second die pad, a first semiconductor element, a second semiconductor element, an insulating element, first terminals, second terminals, and a sealing resin. The sealing resin has a first side surface located on one side of a first direction, a second side surface located on the other side of the first direction, and third and fourth side surfaces that are separated from each other in a second direction orthogonal to both a thickness direction and the first direction and are connected to the first and second side surfaces. A first gate mark having a surface roughness larger than the other regions of the third side surface is formed on the third side surface. When viewed along the second direction, the first gate mark overlaps a pad gap provided between the first die pad and the second die pad in the first direction.