A semiconductor package includes a pad and leads, the pad and leads including a base metal predominantly including copper, a first plated metal layer predominantly including nickel in contact with the base metal, and a second plated metal layer predominantly including silver in contact with the first plated metal layer. The first plated metal layer has a first plated metal layer thickness of 0.1 to 5 microns, and the second plated metal layer has a second plated metal layer thickness of 0.2 to 5 microns. The semiconductor package further includes an adhesion promotion coating predominantly including silver oxide in contact with the second plated metal layer opposite the first plated metal layer, a semiconductor die mounted on the pad, a wire bond extending between the semiconductor die and a lead of the leads, and a mold compound covering the semiconductor die and the wire bond.

A semiconductor die is arranged at a die mounting region at a first surface of a die pad in a substrate. The die pad has a second surface opposite the first surface. Laser beam energy is applied to the second surface of the die pad to form in the second surface of the die pad a recessed peripheral portion surrounding a central portion opposite the die mounting region at the first surface. An encapsulation of electrically insulating material is molded onto the substrate. During molding, the electrically insulating material covers the recessed peripheral portion and leakage of the electrically insulating material over the central portion is countered in response to the peripheral portion of the second surface of the die pad being recessed.

A method of removing metal oxide from electrically conductive contacts of a packaged semiconductor device includes mixing a solution including vinegar and nitric acid, applying the solution to the contacts for a time sufficient to remove the metal oxide from the contacts, and rinsing the solution from the contacts.

A semiconductor package includes a lead frame, a chip, and a molding encapsulation. The lead frame comprises a die paddle, a first plurality of leads, additional one or more leads, a second plurality of leads, a first tie bar, a second tie bar, a third tie bar, and a fourth tie bar. A respective end surface of each lead of the first plurality of leads, the additional one or more leads, and the second plurality of leads is plated with a metal. A respective end surface of the first tie bar, the second tie bar, the third tie bar, and the fourth tie bar is not plated with the metal. A method for fabricating a semiconductor package includes the steps of providing a lead frame array, mounting a chip, forming a molding encapsulation, applying a trimming process, applying a plating process, and applying a singulation process.

In examples, a method of forming a semiconductor package comprises forming a conversion coating solution comprising a salt of a vanadate, a salt of a zirconate, or both with a complexing agent; cleaning a copper lead frame, wherein the cleaned copper lead frame comprises copper oxide on an outer surface thereof; immersing the cleaned copper lead frame in the conversion coating solution; rinsing the copper lead frame; and forming an assembly by coupling a semiconductor die to the copper lead frame, coupling the semiconductor die to a lead of the copper lead frame, applying a mold compound onto at least a portion of the outer surface of the copper lead frame, and curing the mold compound. An adhesion strength at an interface between the mold compound and the at least the portion of the outer surface of the copper lead frame is increased relative to a same assembly formed without immersing the copper lead frame in the conversion coating solution.

According to one embodiment, there is provided a cleaning agent. The cleaning agent includes an azole-based compound having a group including at least one selected from the group consisting of a glycidyl group, a hydrolyzable silyl group, and an amino group.

A method for manufacturing packaged device chips by dividing a package substrate, on which device chips arrayed on a lead frame are sealed with a mold resin, along divide-preset lines, is provided. The method includes a package substrate forming step including forming the package substrate by sealing the device chips arrayed on supporting sections of the lead frame and electrodes, each having a recess which is open on a second surface side of the lead frame, with the mold resin; a recess coating step including coating each of the recesses at least partly with a coating material; a dividing step including dividing regions including the recesses coated with the coating material along the divide-preset lines to produce the packaged device chips; and a removing step including jetting a high-pressure fluid at the coating material coating the recesses to remove the coating material from the recesses.

According to an embodiment, a semiconductor device includes a semiconductor chip having a first surface on which a source electrode and a gate electrode are provided and a second surface that is opposed to the first sur face and on which a drain electrode is provided, a source terminal having a fourth surface exposed from a third surface of a package and a fifth surface coupled to the source electrode and having a shape different from a sha pe of the fourth surface, a gate terminal having a sixth surface exposed from the third surface of the package and a seventh surface coupled to the gate electrode and having a shape different from a shape of the sixth surface, and a drain terminal coupled to the drain electrode and having an eighth surface exposed from the third surface of the package.

An assembly includes a conductive surface. The conductive surface includes an area with a hydrophilic surface. The hydrophilic surface is prepared by plasma cleaning. A semiconductor die is disposed on the hydrophilic surface. A coupling layer made of an adhesive material bonds the semiconductor die to the hydrophilic surface. The coupling layer fills a gap between the semiconductor die and the hydrophilic surface.