One aspect of this disclosure is a power amplifier system that includes a control interface, a power amplifier, a passive component, and a bias circuit. The power amplifier and the passive component can be on a first die. The bias circuit can be on a second die. The control interface can operate as a serial interface or as a general purpose input/output interface. The power amplifier can be controllable based at least partly on an output signal from the control interface. The bias circuit can generate a bias signal based at least partly on an indication of the electrical property of the passive component. Other embodiments of the system are provided along with related methods and components thereof.

A method for fabricating a substrate comprising a solder stop structure comprises providing a substrate configured to carry a surface mounted device, the substrate comprising a ceramic layer and a metallization arranged on the ceramic layer, wherein the metallization comprises a base metal layer and a noble metal layer covering the base metal layer, and generating an oxidation structure on the metallization, wherein the oxidation structure divides the metallization into a first part and a second part, and wherein the oxidation structure is configured to act as a solder stop, wherein generating the oxidation structure comprises partially removing the noble metal layer.

The present disclosure provides for a heatshield that can be actively cooled during a rework process. The heatshield may include a backer plate, a metal plate, and/or a package pedestal. The backer plate may include one or more air inlet ports configured to be connected to an air compressor. Air inlet ducts may extend from the air inlet ports through at least a portion of the backer plate. A plurality of vents may extend from the air inlet ducts to a top surface of the backer plate such that the plurality of vents directs cooling gas forced into the heatshield towards the metal plate and a first BGA. The cooling gas may maintain the solder joint temperature of the first BGA package below the reflow temperature and below the solidus temperature of the solder joints to prevent reflow-related solder joint defects from occurring in the first BGA package during rework of a second BGA package.

Provided are a chip interconnection package structure and method, including: forming a sacrificial pattern layer on a support structure; forming an interconnection winding pattern layer on the sacrificial pattern layer, wherein the interconnection winding pattern layer is corresponding to a sacrificial pattern of the sacrificial pattern layer in position; forming a first insulating layer on the interconnection winding pattern layer; forming a plurality of chips arranged at intervals on the first insulating layer, wherein the plurality of chips are respectively corresponding to the interconnection winding pattern of the interconnection winding pattern layer in position; and removing the support structure, and forming, on one side of the sacrificial pattern layer, a first interconnection hole penetrating through the sacrificial pattern, the interconnection winding pattern and the first insulating layer, and making the first interconnection hole aligned and communicated with a first interconnection pin of the chip corresponding in projection position.

A routing structure between dies is provided, including a trace layer, disposed on a substrate, wherein a plurality of routing paths is embedded in the trace layer. In addition, a first die and a second die are disposed on the trace layer and connected by the routing paths. A spacing gap between the first die and the second die is along a first direction and interfacing edges of the first die and the second die are extending along a second direction perpendicular to the first direction. Each of the routing paths includes a first straight portion in parallel to connect to the interfacing edges. The first straight portion has a slant angle with respect to the first direction other than 0° and 90°.

A set of features for a product is identified. It is determined that preventing an electrical connection at a ball-grid-array location on a ball-grid-array assembly of the product would result in the set of features. The ball-grid-array location is established as a target BGA location based on that determination. Suction is applied to a via at the target BGA location during reflow of the ball-grid-array assembly. With that application of suction, a solder ball at the target BGA location is drawn into the via.

Various circuit boards and methods of fabricating and using the same are disclosed. In one aspect, a system is provided that has a circuit board with a pocket and a conductor layer. A chiplet is positioned in the pocket. The chiplet has plural bottom side interconnects electrically connected to the conductor layer and plural top side interconnects adapted to interconnect with two or more semiconductor chips.

The disclosure is and includes at least an apparatus, system and method for a ramped electrical interconnection for use in semiconductor fabrications. The apparatus, system and method includes at least a first semiconductor substrate having thereon a first electrical circuit comprising first electrical components; a second semiconductor substrate at least partially covering the first electrical circuit, and having thereon a second electrical circuit comprising second electrical components; a ramp formed through the second semiconductor substrate between at least one of the first electrical components and at least one of the second electrical components; and an additively manufactured conductive trace formed on the ramp to electrically connect the at least one first electrical component and the at least one second electrical component.

A system and method of using electrochemical additive manufacturing to add interconnection features, such as wafer bumps or pillars, or similar structures like heatsinks, to a plate such as a silicon wafer. The plate may be coupled to a cathode, and material for the features may be deposited onto the plate by transmitting current from an anode array through an electrolyte to the cathode. Position actuators and sensors may control the position and orientation of the plate and the anode array to place features in precise positions. Use of electrochemical additive manufacturing may enable construction of features that cannot be created using current photoresist-based methods. For example, pillars may be taller and more closely spaced, with heights of 200 μm or more, diameters of 10 μm or below, and inter-pillar spacing below 20 μm. Features may also extend horizontally instead of only vertically, enabling routing of interconnections to desired locations.

A semiconductor device includes a first chip package, a heat dissipation structure and an adapter. The first chip package includes a semiconductor die laterally encapsulated by an insulating encapsulant, the semiconductor die has an active surface and a back surface opposite to the active surface. The heat dissipation structure is connected to the chip package. The adapter is disposed over the first chip package and electrically connected to the semiconductor die.