A method of testing a semiconductor package is provided. The method includes forming a first metallization layer, wherein the first metallization layer includes a first conductive pad electrically connected to a charge measurement unit and a charge receiving unit; performing a first test against the charge measurement unit through the first conductive pad to determine whether breakdown occurs in the charge measurement unit; and in response to determining that no breakdown occurs in the charge measurement unit, forming a second dielectric layer over the first metallization layer, wherein a portion of the first conductive pad is exposed from the second dielectric layer.

Multiple component package structures are described in which an interposer chiplet is integrated to provide fine routing between components. In an embodiment, the interposer chiplet and a plurality of conductive vias are encapsulated in an encapsulation layer. A first plurality of terminals of the first and second components may be in electrical connection with the plurality of conductive pillars and a second plurality of terminals of first and second components may be in electrical connection with the interposer chiplet.

In an embodiment, a structure includes a core substrate, a redistribution structure coupled, the redistribution structure including a plurality of redistribution layers, the plurality of redistribution layers comprising a dielectric layer and a metallization layer, a first local interconnect component embedded in a first redistribution layer of the plurality of redistribution layers, the first local interconnect component comprising conductive connectors, the conductive connectors being bonded to a metallization pattern of the first redistribution layer, the dielectric layer of the first redistribution layer encapsulating the first local interconnect component, a first integrated circuit die coupled to the redistribution structure, a second integrated circuit die coupled to the redistribution structure, an interconnect structure of the first local interconnect component electrically coupling the first integrated circuit die to the second integrated circuit die, and a set of conductive connectors coupled to a second side of the core substrate.

A package structure is provided. The package structure includes a reinforced plate and multiple conductive structures penetrating through the reinforced plate. The package structure also includes a redistribution structure over the reinforced plate. The redistribution structure has multiple polymer-containing layers and multiple conductive features. The package structure further includes multiple chip structures bonded to the redistribution structure through multiple solder bumps. In addition, the package structure includes a protective layer surrounding the chip structures.

A manufacturing method includes performing imposition on at least two discrete double-side packaged structures such that lateral electrical connection structures located on the same side of each of the at least two discrete double-side packaged structures are coplanar; and electrically mounting a first component onto lateral electrical connection structures on the first side, where a double-side packaged structure includes a substrate, the lateral electrical connection structures are formed on the first face and the second face of the substrate, and the first face is opposite to the second face and is adjacent to the first side.

A method of manufacturing a semiconductor package includes depositing a first dielectric layer over a carrier substrate. A first metallization pattern is formed over the first dielectric layer. The first metallization pattern has a first opening exposing the first dielectric layer. A second dielectric layer is deposited over the first metallization pattern, forming a dielectric slot through the first metallization pattern by filling the first opening. A second metallization pattern and a third dielectric layer are formed over the second dielectric layer. A through via is formed over the third dielectric layer, so that the dielectric slot is laterally under the through via.

A method of manufacture for a semiconductor package includes; forming a first wiring structure, connecting a semiconductor chip to the first wiring structure, forming a lower encapsulant on the first wiring structure to cover at least a portion of a lateral surface of the semiconductor chip, wherein the lower encapsulant does not cover an upper surface of the semiconductor chip, forming an upper encapsulant on the lower encapsulant, wherein the upper encapsulant covers the upper surface of the semiconductor chip and the upper encapsulant has a materially different composition than the lower encapsulant, and forming a second wiring structure on the upper encapsulant.

An electronic package is provided, in which an electronic element is disposed on an upper side of a circuit structure, a package layer covers the electronic element, and an action structure is embedded in the package layer, so that the action structure is exposed from a surface of the package layer, and then a bonding element is disposed on a lower side of the circuit structure and corresponding to the position of the action structure, so as to form a thermal conduction between the bonding element and the action structure. Therefore, a laser can transfer heat energy to the bonding element via the action structure, so that a solder material on the bonding element can be reflowed.

Provided is an electronic package, in which a conductive structure and an encapsulation layer covering the conductive structure are arranged on one side of a carrier structure having a circuit layer, and an electronic component is arranged on the other side of the carrier structure. The rigidity of the carrier structure is increased by the encapsulation layer, and problems such as warpage or wavy deformations caused by increasing the volume of the electronic package due to functional requirements can be eliminated.

A bumped solder pad and methods for adding bumps to a solder pad are provided. A substrate is provided having metal layer formed thereon and a solder pad formed from a portion of the metal layer. A surface treatment is applied to the solder pad. The surface treatment is patterned. The surface treatment is etched to produce at least one bump on the solder pad.