A method of fabricating an electronic power module by additive manufacturing, the electronic module including a substrate having an electrically insulating plate presenting opposite first and second faces, with a first metal layer arranged directly on the first face of the insulating plate, and a second metal layer arranged directly on the second face of the insulating plate. At least one of the metal layers is made by a step of depositing a thin layer of copper and a step of annealing the metal layer, and the method further includes a step of forming at least one thermomechanical transition layer on at least one of the first and second metal layers, the at least one thermomechanical transition layer including a material presenting a coefficient of thermal expansion that is less than that of the metal of the metal layer.

Assembly method of a photovoltaic panel with back-contact solar cells of crystalline silicon, which provides to print ECA adhesive directly on the contacts of the cells and to immediately load and pre-fix the printed cells. The method includes a macro-phase including operating sub-phases, simultaneous and coordinated with respect to each other: a first sub-phase of oriented loading of the cells with the contacts facing upwards on a mobile tray, a second sub-phase of silkscreen printing of ECA on the contacts, a third sub-phase of control of the laying carried out and of optional re-positioning of the screen, a fourth sub-phase of overturning of the printed cells, a fifth sub-phase of oriented transport of a string of cells up to positioning, a sixth sub-phase of pre-fixing. An automatic assembly plant is also disclosed having a combined station that allows for execution of the macro-phase.

In an embodiment, a device includes: an integrated circuit die; a first dielectric layer over the integrated circuit die; a first metallization pattern extending through the first dielectric layer to electrically connect to the integrated circuit die; a second dielectric layer over the first metallization pattern; an under bump metallurgy extending through the second dielectric layer; a third dielectric layer over the second dielectric layer and portions of the under bump metallurgy; a conductive ring sealing an interface of the third dielectric layer and the under bump metallurgy; and a conductive connector extending through the center of the conductive ring, the conductive connector electrically connected to the under bump metallurgy.

A direct bonded heterogeneous integration (DBHi) device includes a substrate including a trench formed in a top surface of the substrate. The DBHi device further includes a first chip coupled to the substrate on a first side of the trench by a plurality of first interconnects. The DBHi device further includes a second chip coupled to the substrate on a second side of the trench by a plurality of second interconnects. The second side of the trench is arranged opposite the first side of the trench. The DBHi device further includes a bridge coupled to the first chip and to the second chip by a plurality of third interconnects such that the bridge is suspended in the trench. The DBHi device further includes a non-conductive paste material surrounding the plurality of third interconnects to further couple the bridge to the first chip and to the second chip.

In an embodiment, a device includes: an integrated circuit die; a first dielectric layer over the integrated circuit die; a first metallization pattern extending through the first dielectric layer to electrically connect to the integrated circuit die; a second dielectric layer over the first metallization pattern; an under bump metallurgy extending through the second dielectric layer; a third dielectric layer over the second dielectric layer and portions of the under bump metallurgy; a conductive ring sealing an interface of the third dielectric layer and the under bump metallurgy; and a conductive connector extending through the center of the conductive ring, the conductive connector electrically connected to the under bump metallurgy.

In one embodiment, a direct injection device includes a head, a plunger, a reservoir, and multiple needles. The head controls extrusion of liquid stored in the reservoir of the direct injection device. For example, the head causes the plunger to compress the liquid in the reservoir, which causes the liquid to be extruded through the needles.

A ceramic article. In some embodiments, the ceramic article includes a ceramic body composed of a ceramic material; and a first conductive trace, the first conductive trace having a first portion entirely within the ceramic material, the first portion having a length of 0.5 mm and transverse dimensions less than 500 microns, the ceramic material including a plurality of ceramic particles in a ceramic matrix.

There are provided a mounted structure that is excellent in precision with little joining deviation and can be efficiently produced, an LED display, and a mounting method. There are provided a mounted structure, an LED display including the mounted structure, and a manufacturing method for mounting a semiconductor element on a substrate. The mounted structure is a structure in which the semiconductor element including a terminal is mounted on the substrate including an electrode. The mounted structure includes a joining portion that joins the terminal and the electrode to make the terminal and the electrode oppose each other, the electrode is a bump of a bulk metal material disposed on the substrate, and the joining portion is obtained by thermally fusing metal nanoparticles in ink containing the metal nanoparticles transferred onto at least one of the electrode or the terminal by using a microcontact printing method.

Embodiments may relate to a microelectronic package comprising: a die and a package substrate coupled to the die with a first interconnect on a first face. The package substrate comprises: a second interconnect and a third interconnect on a second face opposite to the first face; a conductive signal path between the first interconnect and the second interconnect; a conductive ground path between the second interconnect and the third interconnect; and an electrostatic discharge (ESD) protection material coupled to the conductive ground path. The ESD protection material comprises a first electrically-conductive carbon allotrope having a first functional group, a second electrically-conductive carbon allotrope having a second functional group, and an electrically-conductive polymer chemically bonded to the first functional group and the second functional group permitting an electrical signal to pass between the first and second electrically-conductive carbon allotropes.

A package structure includes a first package, a second package, a conductive spacer, and a flux portion. The first package includes a semiconductor die. The second package is stacked to the first package. The conductive spacer is disposed between and electrically couples the first package and the second package. The flux portion is disposed between and electrically couples the first package and the conductive spacer, where the flux portion includes a first portion and a second portion separating from the first portion by a gap, and the first portion and the second portion are symmetric about an extending direction of the gap. The gap is overlapped with the conductive spacer.