H01L21/4878

SEMICONDUCTOR APPARATUS, MANUFACTURING METHOD FOR SEMICONDUCTOR APPARATUS, AND POWER CONVERTER

A semiconductor apparatus that ensures heat dissipation using a heat dissipating member with multiple fins formed by folding a metal plate, a manufacturing method for the semiconductor apparatus, and a power converter are obtained. The semiconductor device is bonded to a lead frame. The lead frame is provided on an insulating layer and a metal base plate is provided on the face opposite to the face of the insulating layer on which the semiconductor device is bonded. The semiconductor device, the lead frame, the insulating layer, and the metal base plate are sealed with a sealing member in such a way that a portion of the lead frame and a portion of the metal base plate are exposed. The exposed portion of the metal base plate exposed from the sealing member is inserted in an opening of a support frame. A heat dissipating member is bonded to both the metal base plate and the support frame.

SEMICONDUCTOR MODULE, METHOD FOR MANUFACTURING THE SAME, AND POWER CONVERSION DEVICE

A semiconductor module includes: a fin base including a first surface and a second surface, the second surface being a surface opposite to the first surface; an insulating sheet arranged on the first surface; a plurality of frame patterns arranged on the first surface with the insulating sheet interposed therebetween; a semiconductor element arranged on at least one of the plurality of frame patterns; and a plurality of fins swaged onto the second surface so as to be spaced apart from each other in a first direction.

Power semiconductor device and manufacturing method for power semiconductor device

A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.

Semiconductor device packaging warpage control

A method of manufacturing a carrier for semiconductor device packaging is provided. The method includes forming a carrier having a plurality of plateau regions separated by a plurality of channels. The carrier is configured and arranged to support a plurality of semiconductor die during a packaging operation. The plurality of channels is filled with a material configured to control warpage of the carrier.

Base Plate for a Semiconductor Module Arrangement and Method for Producing a Base Plate
20220005708 · 2022-01-06 ·

A method comprises producing a base plate, wherein producing the base plate comprises forming a layer of a metallic material, and forming at least one first area in the layer of metallic material, wherein forming the at least one first area either comprises locally deforming the layer of metallic material, or locally inducing stress into the layer of metallic material, or both such that a deflection or a local stress or both in the at least one first area differs from a deflection or a local stress or both of those areas of the metallic layer surrounding the at least one first area.

Package Structure and Method and Equipment for Forming the Same

A packaged semiconductor device and a method and apparatus for forming the same are disclosed. In an embodiment, a method includes bonding a device die to a first surface of a substrate; depositing an adhesive on the first surface of the substrate; depositing a thermal interface material on a surface of the device die opposite the substrate; placing a lid over the device die and the substrate, the lid contacting the adhesive and the thermal interface material; applying a clamping force to the lid and the substrate; and while applying the clamping force, curing the adhesive and the thermal interface material.

SEMICONDUCTOR DEVICE PACKAGE HAVING WARPAGE CONTROL AND METHOD OF FORMING THE SAME

A semiconductor device package and a method of forming the same are provided. The semiconductor device package includes a substrate, an electronic component, a ring structure, and an adhesive layer. The electronic component is located over a surface of the substrate. The ring structure is located over the surface of the substrate and surrounding the electronic component. The ring structure has a bottom surface facing the surface of the substrate and a top surface opposite the bottom surface. The ring structure includes recesses recessed from and located on the top surface, wherein the recesses are arranged corresponding to the corners of the substrate. The adhesive layer is interposed between the bottom surface of the ring structure and the surface of the substrate.

Package Structure and Method and Equipment for Forming the Same

An apparatus for manufacturing packaged semiconductor devices includes a lower plate having package platforms and clamp guide pins to align an upper plate with the lower plate, and a boat tray having windows configured to receive package devices, and a plurality of upper plates configured to be aligned to respective windows and respective package platforms. Clamping force can be applied by fasteners configured to generate a downward force upon the upper plate. Package devices on the platforms are thus subjected to a clamping force. Load cells measure the clamping force so adjustments can be made.

Package structure and method and equipment for forming the same

A packaged semiconductor device and a method and apparatus for forming the same are disclosed. In an embodiment, a method includes bonding a device die to a first surface of a substrate; depositing an adhesive on the first surface of the substrate; depositing a thermal interface material on a surface of the device die opposite the substrate; placing a lid over the device die and the substrate, the lid contacting the adhesive and the thermal interface material; applying a clamping force to the lid and the substrate; and while applying the clamping force, curing the adhesive and the thermal interface material.

THERMAL INTERFACE MATERIAL STRUCTURES FOR DIRECTING HEAT IN A THREE-DIMENSIONAL SPACE

A thermal interface material (TIM) structure for directing heat in a three-dimensional space including a TIM sheet. The TIM sheet includes a lower portion along a lower plane; a first side portion along a first side plane; a first upper portion along an upper plane; a first fold between the lower portion and the first side portion positioning the first side portion substantially perpendicular to the lower portion; and a second fold between the first side portion and the first upper portion positioning the first upper portion substantially perpendicular to the first side portion and substantially parallel to the lower portion.