According to claim 1, the invention relates to a method for providing at least one solid-body layer (4). The solid-body layer (4) is separated from a solid body (1). The method according to the invention preferably has the steps of: producing a plurality of modifications (9) in the interior of the solid body (1) using laser beams in order to form a separation plane (8), compressive stresses being produced in the solid body (1) by the modifications (9); separating the solid-body layer (4) by separating the remaining solid body (1) and the solid-body layer (4) along the separation plane (8) formed by the modifications (9), wherein at least parts of the modifications (9) which produce the compressive stresses remain on the solid-body layer (4), and enough modifications (9) are produced that the solid-body layer (4) is separated from the solid body (1) on the basis of the modifications (9) or an external force is introduced into the solid body (1) in order to produce additional stresses in the solid body (1), said external force being so great that the stresses cause a crack to propagate along the separation plane (8) produced by the modifications; and producing a metal layer on the surface exposed by the separation of the solid-body layer (4) from the solid body (1) in order to at least partly, preferably greatly and particularly preferably completely, compensate for a deformation of the solid-body layer (4) produced by the compressive stresses of the remaining modification parts or at feast partly, preferably greatly or completely, compensate for the compressive stresses.

The present invention provides: a composite metal material which is able to be controlled in terms of strength, thermal conductivity and thermal expansion amount; and a method for producing this composite metal material. A composite metal material according to the present invention has a Cu-rich phase and an Fe-rich phase; and this composite metal material has a composite metal phase wherein Fe-rich phases are independently dispersed in a Cu-rich phase. The Cu-rich phase has a Cu content of more than 85 wt %; and each Fe-rich phase has an Fe content of more than 50 wt %.

A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.

A semiconductor package includes a wafer and at least one chip attached on first portions of an upper surface of the wafer. Further, the semiconductor package includes an insulating barrier layer, a thermally conductive layer, and a heat sink. The insulating barrier layer is arranged over the at least one chip attached on first portions of an upper surface of the wafer. The thermally conductive layer is arranged over the insulating barrier layer and at least partially encapsulates the at least one chip. The heat sink is arranged over the thermally conductive layer.

A heat transfer interface structure and a method of manufacturing the same are disclosed. A substrate has a plurality of raised features formed on at least one surface the substrate. The raised features are deformable under a compressive force and have respective openings at end portions thereof. A thickness of a raised feature at the end portion thereof is smaller than a thickness of the raised feature at an intermediate portion of the raised feature.

A heatsink includes a fin-set that includes a corrugated ribbon having a first, deformable, portion and a second, convective, portion that is not deformed. A plurality of corrugated ribbons may be physically and/or thermally coupled (e.g., via mechanical fasteners, thermally conductive bonding, or reflow) to form the heatsink. A force may be applied to the heatsink sufficient to at least partially crush the first, deformable, portion to conform to an external surface of an electronic device. The heatsink may be physically affixed and thermally coupled to an external surface of the electronic device via mechanical fasteners, thermally conductive adhesives or via reflow of a low-melt temperature layer disposed on an external surface of the heatsink. The crushed portion of the first, deformable, portion conforms to the regular (e.g., planar) or irregular surface profile of the electronic device, beneficially and surprisingly improving thermal performance of the heatsink.

There is provided a heat sink in which the thermal resistance from a portion where the heat sink directly or indirectly makes contact with a heat-generating device to a portion where the heat sink makes contact with a coolant is set to be a value that is different from the thermal resistance at a different position in the flowing direction of the coolant, so that it is made possible to suppress the temperature difference between the upstream end and the downstream end of the heat-generating device.

A compliant pin fin heat sink includes a flexible base plate having a thickness of from about 0.2 mm to about 0.5 mm. A plurality of pins extends from the flexible base plate and is formed integral with the flexible base plate by forging. A flexible top plate is connected to and spaced from the flexible base plate. The plurality of pins is disposed between the flexible base plate and the flexible top plate.

A cooling apparatus for a semiconductor module including a semiconductor chip, having a case with a top plate, a base plate, a side wall plate arranged between the top plate and the base plate, and a coolant flow-through portion surrounded by the top plate, base plate, and side wall plate; first cooling pins secured to the top plate in the coolant flow-through portion of the case; and second cooling pins secured to the top plate in the coolant flow-through portion of the case and having lengths in a thickness direction from the top plate toward the base plate greater than lengths of the first cooling pins, wherein at least one first cooling pin and at least one second cooling pin are arranged in an alternating manner, and this pattern appears repeatedly at least twice, along a first direction in a plane parallel to the top plate.

Overmolded microelectronic packages containing knurled base flanges are provided, as are methods for producing the same. In various embodiments, the overmolded microelectronic package includes a molded package body, at least one microelectronic device contained in the molded package body, and a base flange to which the molded package body is bonded. The base flange includes, in turn, a flange frontside contacted by the molded package body, a device attachment region located on the flange frontside and to which the at least one microelectronic is mounted, and a knurled surface region. The knurled surface region includes a first plurality of trenches formed in the base flange and arranged in a first repeating geometric pattern. The molded package body extends or projects into the first plurality of trenches to decrease the likelihood of delamination of the molded package body from the base flange.