Techniques are described to limit heat transfer from a first electronic component to a second electronic such as by having an aperture in a lid over the second electronic component to form a gap in the conductance of heat from the first electronic component to the second electronic component. A semiconductor electronic package includes a substrate, a first electronic component that is of a first type and that is mounted along a surface of the substrate, a second electronic component that is of a second type different than the first type and that is mounted along the surface of the substrate, and a metallic component that is positioned over the first electronic component and that has an aperture through which the second electronic component is exposed.

A memory heat dissipation unit is disclosed. The memory heat dissipation unit includes a main body having a first portion, a second portion and a connection portion having two lateral edges separately connected to the first and the second portion. The first and the second portion have at least one first heat-receiving section and at least one second heat-receiving section formed thereon, respectively; and the first and the second heat-receiving section are correspondingly in contact with at least one memory chip each to exchange heat with the chips and accordingly cool the same.

A process for fabricating at least one elementary heterostructure includes producing a heterostructure comprising at least one semiconductor structure of resistivity higher than or equal to 1 .cm located between two electrically conductive structures of resistivity lower than or equal to 0.1 .cm; cutting the heterostructure by electrical discharge machining so as to define at least the elementary heterostructure; the thickness of the semiconductor structure being smaller than about 1/10th of the thickness of at least one of the electrically conductive structures or of the total thickness of the electrically conductive structures.

A power module and a production method of the same, wherein a metal substrate is connected with the connection substrate in a high temperature, and in a process of cooling from a high temperature to a low temperature, an upper surface and a lower surface of the metal substrate are bendingly deformed toward the connection substrate, and the upper surface of the metal substrate is formed as a curved surface protruding toward the connection substrate, then the lower surface of the metal substrate is processed into a plane. In the power module and the production method of the disclosure, the second bonding material between the metal substrate and the connection substrate has a larger edge thickness, which reduces the thermal stress that the edge of the second bonding material is subject to, thereby improving the reliability of the power module while the power module has good heat dissipation performance.

To provide a method for manufacturing a heat dissipation component having excellent heat dissipation properties, in which there is minimal return of warping after the bonding of a circuit board, and to provide a heat dissipation component manufactured using the method. Provided is a method for manufacturing a warped flat-plate-shaped heat dissipation component containing a composite part that comprises silicon carbide and an aluminum alloy, wherein the method for manufacturing the heat dissipation component is characterized in that the heat dissipation component is sandwiched in a concave-convex mold having a surface temperature of at least 450 C. and having a pair of opposing spherical surfaces measuring 7000-30,000 mm in curvature radius, and pressure is applied for 30 seconds or more at a stress of 10 kPa or more such that the temperature of the heat dissipation component reaches at least 450 C.

An electronics thermal conduction package is provided. The package may include a housing and an interior space, or envelope, configured to receive a printed circuit board assembly (PCBA) with one or more microprocessors or other heat generating elements. The package can be elastically deformed to open a dimension of the envelope, or receiving cavity, such that a complete PCBA can be inserted inside the interior space of the package. Once inserted, the package may be returned to its undeformed, or substantially undeformed, state such that surfaces in the interior space of the package contact one or more of the heat generating elements on the PCBA creating a conductive thermal path from the heat generating elements to the housing of the package.

Integrated heat spreaders having electromagnetically-formed features, and semiconductor packages incorporating such integrated heat spreaders, are described. In an example, an integrated heat spreader includes a top plate flattened using an electromagnetic forming process. Methods of manufacturing integrated heat spreaders having electromagnetically-formed features are also described.

A semiconductor module comprising a semiconductor apparatus and a cooling apparatus, where: the semiconductor apparatus includes a semiconductor chip and a circuit board on which the semiconductor chip is mounted; and the cooling apparatus includes: a top plate on which the semiconductor apparatus is mounted; a jacket including a side wall connected to the top plate, a bottom plate connected to the side wall and facing the top plate, and a cooling pin fin extending in such a manner as to taper from the bottom plate toward the top plate, where at least the bottom plate and the cooling pin fin are integrally formed, and at least one of ends of the cooling pin fin is firmly fixed to the top plate; and a coolant flow portion defined by the top plate and the jacket and for flow of coolant.

A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.

A packaged semiconductor device and a method and apparatus for forming the same are disclosed. In an embodiment, a method includes bonding a device die to a first surface of a substrate; depositing an adhesive on the first surface of the substrate; depositing a thermal interface material on a surface of the device die opposite the substrate; placing a lid over the device die and the substrate, the lid contacting the adhesive and the thermal interface material; applying a clamping force to the lid and the substrate; and while applying the clamping force, curing the adhesive and the thermal interface material.