A system includes a package layer with microchannels to spread heat localized in the package at an electronic die. The microchannel is integrated onto or into the package layer. The microchannel has a hollow heat conducting material with a rectangular cross-section through which a fluid is to flow to spread the heat. The microchannel can be an open channel that is sealed with a pump to cause the fluid to flow through the microchannel. The microchannel can be sealed in the integration process to result in a closed heat pipe structure in which liquid flows through expansion and compression in response to heating and cooling, respectively.

A heat dissipation structure includes a peripheral substrate, a chip substrate, a thermally conductive material, and a heat sink. One end of the peripheral substrate is connected to the chip substrate along a periphery of the chip substrate, and the heat sink is connected to the other end of the peripheral substrate. Additionally, an accommodation space is defined among the peripheral substrate, the heat sink, and the chip substrate. The thermally conductive material is filled in the accommodation space, and the chip substrate is configured to place a silicon die. When power consumption of the chip increases, the heat generated by the chip may be dissipated by using the silicon die and the thermally conductive material, so that heat dissipation efficiency is improved, and a heat dissipation effect is improved.

A power semiconductor module includes a power semiconductor chip arranged between a first substrate and a second substrate and electrically coupled to the substrates, and a temperature sensor arranged between the substrates and laterally besides the power semiconductor chip such that a first side of the temperature sensor faces the first substrate and a second side of the temperature sensor faces the second substrate. A first electrical contact of the temperature sensor is arranged on the first side and electrically coupled to the first substrate. A second electrical contact of the temperature sensor is arranged on the second side and electrically coupled to the second substrate.

The disclosure provides a heat dissipation structure and a manufacturing method thereof. The heat dissipation structure includes a heat pipe and multiple heat dissipation fins. The heat pipe has an outer annular wall with multiple conic annular grooves. A slant inner annular wall is disposed in each conic annular groove. Each heat dissipation fin has a through hole and a conic annular wall disposed on an outer edge of the through hole. The heat dissipation fins are adapted to sheathe the heat pipe in a spacedly stacked manner. Each conic annular wall is embedded in each conic annular groove to be adapted to sheathe each slant inner annular wall in a compressive manner. Therefore, efficiency of heat dissipation and structural strength of the heat dissipation structure are improved.

An integrated circuit assembly may be formed having a substrate, a first integrated circuit device electrically attached to the substrate, a second integrated circuit device electrically attached to the first integrated circuit device, and a heat dissipation device defining a fluid chamber, wherein at least a portion of the first integrated circuit device and at least a portion of the second integrated circuit device are exposed to the fluid chamber. In further embodiments, at least one channel may be formed in an underfill material between the first integrated circuit device and the second integrated circuit device, between the first integrated circuit device and the substrate, and/or between the second integrated circuit device and the substrate, wherein the at least one channel is open to the fluid chamber.

A method of manufacturing a semiconductor device includes: adhering together a heat generating body and a heat dissipating body via a thermally conductive sheet by applying a pressure on the heat generating body and the heat dissipating body in a thickness direction of the thermally conductive sheet with the thermally conductive sheet disposed therebetween, the thermally conductive sheet having a compression modulus of 1.40 MPa or less under a compressive stress of 0.10 MPa at 150° C., and a tack strength of 5.0 N.Math.mm or more at 25° C.

A method of manufacturing a semiconductor device includes adhering together a heat dissipating body and a plurality of heat generating bodies via a thermally conductive sheet, by applying pressure to the heat dissipating body and the plurality of heat generating bodies in a thickness direction of the thermally conductive sheet with the thermally conductive sheet disposed therebetween, the thermally conductive sheet having a compression modulus of 1.40 MPa or less under a compressive stress of 0.10 MPa at 150° C.

A method for forming an assembly is provided. The method includes depositing a colloidal template onto a substrate, wherein the colloidal template is porous, depositing a metal layer onto and within the colloidal template, depositing a cap structure onto the colloidal template opposite of the substrate, and removing the colloidal template from between the substrate and the cap structure to form a metal inverse opal structure disposed therebetween. The method continues by depositing an electrical isolation layer in contact with the cap structure opposite the metal inverse opal structure, and attaching the electrical isolation layer to a cooling device.

A transistor heat dissipation module is adapted for at least one transistor. The transistor heat dissipation module includes a heat dissipation member and an elastic member. The heat dissipation member includes a first wall and a second wall opposite to each other and a first connecting member connected to the first wall and the second wall. An accommodating space is formed between the first wall and the second wall. The transistor is disposed in the accommodating space. The elastic member is disposed in the accommodating space and is located between the at least one transistor and the first wall to press the at least one transistor against the second wall. An assembly method of a transistor heat dissipation module is further provided.

Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a circuit substrate, a semiconductor chip mounted on the circuit substrate, and a thermal radiation film covering the semiconductor chip on the circuit substrate. The semiconductor chip includes first lateral surfaces opposite to each other in a first direction and second lateral surfaces opposite to each other in a second direction that intersects the first direction. A first width of the first lateral surface is less than a second width of the second lateral surface. The thermal radiation film covers a top surface of the semiconductor chip and entirely surrounds the first and second lateral surfaces of the semiconductor chip. The thermal radiation film has slits directed toward the first lateral surfaces from ends of the thermal radiation film.