Methods and apparatus for processing a substrate are provided herein. For example, the method can include depositing a first layer of metal on a first substrate; depositing a second layer of metal atop the first layer of metal; depositing a third layer of metal on a second substrate; depositing a fourth layer of metal atop the third layer of metal; and bringing the second layer of material into contact with the fourth layer of material under conditions sufficient to cause the first substrate to be bonded to the second substrate by a diffusion layer formed by portions of the first layer of metal diffusing through the second layer of metal and portions of the third layer of metal diffusing through the fourth layer of metal.

A base plate for cooling a power electronics device is provided, the base plate comprising cooling fins, the base plate configured to receive the power electronics device directly above the cooling fins, the cooling fins integral to the base plate, the base plate configured to conduct a liquid coolant past the cooling fins.

An integrated circuit (IC) package comprises a substrate comprising a dielectric and a thermal conduit that is embedded within the dielectric. The thermal conduit has a length that extends laterally within the dielectric from a first end to a second end. An IC die is thermally coupled to the first end of the thermal conduit. The IC die comprises an interconnect that is coupled to the first end of the thermal conduit. An integrated heat spreader comprises a lid over the IC die and at least one sidewall extending from the edge of the lid to the substrate that is thermally coupled to the second end of the thermal conduit.

A method for manufacturing a fin-integrated semiconductor module includes: clamping a fin-integrated heat-dissipation base using a level different jig while making the heat-dissipation base vary in height; and soldering a semiconductor assembly onto the heat-dissipation base. A semiconductor module includes a fin-integrated heat-dissipation base and a semiconductor assembly provided on the heat-dissipation base. A bending width of the heat-dissipation base is 200 μm or less.

The disclosure relates to an arrangement with a power module including power semiconductor components. The arrangement further includes a component having a curved surface. The power module is arranged on the curved surface of the component and is non-positively detachably connected to the component. The disclosure also relates to a power converter with the arrangement and to a vehicle with a power converter.

The present disclosure relates to an electronic circuit comprising a semiconductor substrate, radiofrequency switches corresponding to MOS transistors comprising doped semiconductor regions in the substrate, at least two metallization levels covering the substrate, each metallization level comprising a stack of insulating layers, conductive pillars topped by metallic tracks, at least two connection elements each connecting one of the doped semiconductor regions and formed by conductive pillars and conductive tracks of each metallization level. The electronic circuit further comprises, between the two connection elements, a trench crossing completely the stack of insulating layers of one metallization level and further crossing partially the stack of insulating layers of the metallization level the closest to the substrate, and a heat dissipation device adapted for dissipating heat out of the trench.

A method includes placing a package, which includes a first package component, a second package component, and an encapsulant encapsulating the first package component and the second package component therein. The method further includes attaching a first thermal interface material over the first package component, attaching a second thermal interface material different from the first thermal interface material over the second package component, and attaching a heat sink over both of the first thermal interface material and the second thermal interface material.

A method for forming a semiconductor device package is provided. The method includes bonding a semiconductor device to a package substrate; placing a metal lid over the semiconductor device and the package substrate with a metal thermal interface material (TIM) provided between the metal lid and the semiconductor device; heating the metal TIM to melt the metal TIM; pressing the metal lid downward so that the molten metal TIM flows toward the boundary of the semiconductor device, and the outermost point of the lateral sidewall of the molten metal TIM extends beyond the boundary of the semiconductor device; lifting the metal lid upward so that the molten metal TIM flows back, and the outermost point of the lateral sidewall is within the boundary of the semiconductor device; and bonding the metal lid to the semiconductor device through the metal TIM by curing the molten metal TIM.

An assembly (110) for dissipating heat generated by a heat generating electrical component (16) which is surface mounted on a circuit board (11) in a surface mounting process. The assembly comprises a heat buffer (120) made of a thermally and electrically conducing material, and being surface mounted on the circuit board (11) so as to be soldered to a thermal flag (18) of the heat generating electrical component (16). The assembly further comprises a heat sink (12) in thermal contact with the heat buffer, and a galvanic separation (13) between the heat buffer and heat sink. The heat capacitance of the heat buffer can absorb short term increases in heat dissipation from the electrical component, before the heat is further dissipated to the galvanically separated heat sink. This may drastically improve performance of the surface mounted component.

A cooling plate for cooling chip having redundant cooling fluid circulation. A primary fluid cooling loop removes heat directly from the chip. A secondary cooling loop acts as a condenser for two phase cells, thus removing heat from the chip indirectly. The cold plate may be fabricated as two parts: bottom plate and top plate where is the fluid is divided to primary stream to the bottom plate and secondary stream to top cooling plate. Two-phase, self-contained cells may be partly immersed in the primary cooling loop and partly immersed in the secondary loop. Fluid ports circulate cooling fluid by having one orifice coupled to the primary cooling loop and one orifice coupled to the secondary cooling loop.