A leadless package with wettable flanks is formed by providing a substrate and plating a metal layer onto the substrate to form a contact on the substrate extending across a saw street. An encapsulant is deposited over the contact. The substrate is removed to expose the contact and encapsulant. The encapsulant and contact are singulated. In some embodiments, the substrate includes a ridge, and the contact is formed over the ridge.

Semiconductor devices are provided in which a first semiconductor device is bonded to a second semiconductor device. The bonding may occur at a gate level, a gate contact level, a first metallization layer, a middle metallization layer, or a top metallization layer of either the first semiconductor device or the second semiconductor device.

A semiconductor package structure has a first electronic component on an insulating layer, a dielectric layer on the insulating layer and surrounding the first electronic component, a second electronic component stacked on the first electronic component, wherein an active surface of the first electronic component faces an active surface of the second electronic component, a molding compound on the first electronic component and surrounding the second electronic component, a third electronic component stacked on the second electronic component and the molding compound.

A semiconductor package structure is provided. The semiconductor package structure includes a first electronic component on a substrate. The semiconductor package structure also includes a second electronic component stacked on the first electronic component. The active surface of the first electronic component faces the active surface of the second electronic component. The semiconductor package structure further includes a molding compound on the first electronic component and surrounding the second electronic component. In addition, the semiconductor package structure includes a third electronic component stacked on the second electronic component and the molding compound.

In order to produce a power semiconductor module, a circuit carrier is populated with a semiconductor chip and with an electrically conductive contact element. After populating, the semiconductor chip and the contact element are embedded into a dielectric embedding compound, and the contact element is exposed. In addition, an electrically conductive base layer is produced which electrically contacts the exposed contact element and which bears on the embedding compound and the exposed contact element. A prefabricated metal film is applied to the base layer by means of an electrically conductive connection layer.

A pressing unit including a pressing pin is attached to a mold, a semiconductor chip, first and second heat sinks, and solders are disposed in a cavity of the mold, a mold closing state is made, and a reflow is carried out in a state where the first and second heat sinks are pressed against first and second wall surfaces by the pressing pin to form a laminated body. After the laminated body is formed, the pressing pin is pulled out from the cavity, and a resin molded body is formed by injecting a resin.

A semiconductor package structure is provided. The semiconductor package structure includes a first electronic component on a substrate. The semiconductor package structure also includes a second electronic component stacked on the first electronic component. The active surface of the first electronic component faces the active surface of the second electronic component. The semiconductor package structure further includes a molding compound on the first electronic component and surrounding the second electronic component. In addition, the semiconductor package structure includes a third electronic component stacked on the second electronic component and the molding compound.

In a frame member including a first region and a second region that are extending in a first direction in parallel to each other while being spaced apart from each other, first and second plating films are formed in the first and second regions, respectively. The second plating film is different in a type from the first plating film. Then, a stamping process is performed to the frame member including the first region and the second region, thereby a lead frame including a plurality of leads is formed. The lead frame includes a first lead group and a second lead group. The first plating film is formed in the first lead group, but the second plating film is not formed in the first lead group. Meanwhile, the second plating film is formed in the second lead group, but the first plating film is not formed in the second lead group.